IT9020459A0 - circuito di comando - Google Patents
circuito di comandoInfo
- Publication number
- IT9020459A0 IT9020459A0 IT9020459A IT2045990A IT9020459A0 IT 9020459 A0 IT9020459 A0 IT 9020459A0 IT 9020459 A IT9020459 A IT 9020459A IT 2045990 A IT2045990 A IT 2045990A IT 9020459 A0 IT9020459 A0 IT 9020459A0
- Authority
- IT
- Italy
- Prior art keywords
- control circuit
- circuit
- control
- Prior art date
Links
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
- G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
- G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
- G11C11/409—Read-write [R-W] circuits
- G11C11/4091—Sense or sense/refresh amplifiers, or associated sense circuitry, e.g. for coupled bit-line precharging, equalising or isolating
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
- G11C7/06—Sense amplifiers; Associated circuits, e.g. timing or triggering circuits
- G11C7/065—Differential amplifiers of latching type
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Dram (AREA)
- Manipulation Of Pulses (AREA)
- Static Random-Access Memory (AREA)
- Electronic Switches (AREA)
- Logic Circuits (AREA)
- Control Of Amplification And Gain Control (AREA)
- Tone Control, Compression And Expansion, Limiting Amplitude (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1019890008066A KR920001325B1 (ko) | 1989-06-10 | 1989-06-10 | 메모리 소자내의 센스 앰프 드라이버 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| IT9020459A0 true IT9020459A0 (it) | 1990-05-29 |
| IT9020459A1 IT9020459A1 (it) | 1991-11-29 |
| IT1248660B IT1248660B (it) | 1995-01-26 |
Family
ID=19287012
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| IT02045990A IT1248660B (it) | 1989-06-10 | 1990-05-29 | Circuito di comando di amplificatore di rilevamento da usarsi in un dispositivo di memoria |
Country Status (9)
| Country | Link |
|---|---|
| US (1) | US5027324A (it) |
| JP (1) | JPH07105141B2 (it) |
| KR (1) | KR920001325B1 (it) |
| CN (1) | CN1018402B (it) |
| DE (1) | DE4006702C2 (it) |
| FR (1) | FR2648290B1 (it) |
| GB (1) | GB2232516B (it) |
| IT (1) | IT1248660B (it) |
| NL (1) | NL193259C (it) |
Families Citing this family (18)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2626160B2 (ja) * | 1990-04-27 | 1997-07-02 | 日本電気株式会社 | 半導体メモリ |
| KR920010346B1 (ko) * | 1990-05-23 | 1992-11-27 | 삼성전자 주식회사 | 반도체 메모리의 센스앰프 구동회로 |
| DE59103725D1 (de) * | 1990-09-20 | 1995-01-12 | Siemens Ag | Dynamischer halbleiterspeicher mit lokalen und hinsichtlich ihrer ansteuerfunktion optimierten leseverstärker-treiberschaltungen. |
| KR960002004B1 (ko) * | 1991-02-19 | 1996-02-09 | 가부시키가이샤 도시바 | 기록검증 제어회로를 갖춘 전기적으로 소거 및 프로그램가능한 독출전용 기억장치 |
| KR0164385B1 (ko) * | 1995-05-20 | 1999-02-18 | 김광호 | 센스앰프회로 |
| JPH09198865A (ja) * | 1996-01-16 | 1997-07-31 | Hitachi Ltd | 半導体メモリ、半導体集積回路装置、制御回路、論理回路、および論理回路の特性を調節する方法 |
| GB2351584B (en) * | 1996-06-27 | 2001-02-14 | Hyundai Electronics Ind | Synchronous graphic ram |
| US5828239A (en) * | 1997-04-14 | 1998-10-27 | International Business Machines Corporation | Sense amplifier circuit with minimized clock skew effect |
| CN1068623C (zh) * | 1997-11-19 | 2001-07-18 | 中国石油化工总公司 | 抑制加热炉生焦的方法 |
| KR100365426B1 (ko) * | 1999-06-28 | 2002-12-18 | 주식회사 하이닉스반도체 | 고이득 저전류 센스 증폭기 |
| KR100308215B1 (ko) * | 1999-08-12 | 2001-11-01 | 윤종용 | 감지 노이즈를 최소화할 수 있는 랜덤 액세스 메모리 장치 |
| JP4011248B2 (ja) * | 1999-12-22 | 2007-11-21 | 沖電気工業株式会社 | 半導体記憶装置 |
| KR100466640B1 (ko) * | 2001-07-13 | 2005-01-15 | 전자부품연구원 | 감광성 페이스트 조성물 및 그를 이용한 미세라인 형성 방법 |
| US6926820B2 (en) * | 2002-09-20 | 2005-08-09 | G.E. Betz, Inc. | Inhibition of viscosity increase and fouling in hydrocarbon streams including unsaturation |
| JP4370507B2 (ja) * | 2003-11-27 | 2009-11-25 | エルピーダメモリ株式会社 | 半導体集積回路装置 |
| JP6402710B2 (ja) * | 2013-03-07 | 2018-10-10 | 日立化成株式会社 | 感光性樹脂組成物、それを用いたドライフィルム、プリント配線板、及びプリント配線板の製造方法 |
| US11631439B1 (en) * | 2021-10-29 | 2023-04-18 | Arm Limited | Flexible sizing and routing architecture |
| CN117976010B (zh) * | 2024-01-03 | 2024-10-08 | 北京超弦存储器研究院 | 感应放大器、数据读写方法、存储阵列结构及存储器 |
Family Cites Families (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6010495A (ja) * | 1983-06-30 | 1985-01-19 | Fujitsu Ltd | センスアンプ |
| US4694205A (en) * | 1985-06-03 | 1987-09-15 | Advanced Micro Devices, Inc. | Midpoint sense amplification scheme for a CMOS DRAM |
| JPS62125591A (ja) * | 1985-11-27 | 1987-06-06 | Nec Ic Microcomput Syst Ltd | 駆動回路 |
| JPH07107798B2 (ja) * | 1987-11-18 | 1995-11-15 | 三菱電機株式会社 | ダイナミックランダムアクセスメモリにおけるセンスアンプ駆動装置およびセンスアンプ駆動方法 |
| KR910002033B1 (ko) * | 1988-07-11 | 1991-03-30 | 삼성전자 주식회사 | 메모리 셀의 센스앰프 구동회로 |
| US4851720A (en) * | 1988-09-02 | 1989-07-25 | Cypress Semiconductor Corporation | Low power sense amplifier for programmable logic device |
-
1989
- 1989-06-10 KR KR1019890008066A patent/KR920001325B1/ko not_active IP Right Cessation
-
1990
- 1990-02-27 US US07/485,913 patent/US5027324A/en not_active Expired - Lifetime
- 1990-02-28 JP JP2048203A patent/JPH07105141B2/ja not_active Expired - Fee Related
- 1990-02-28 DE DE4006702A patent/DE4006702C2/de not_active Expired - Lifetime
- 1990-02-28 GB GB9004461A patent/GB2232516B/en not_active Expired - Lifetime
- 1990-02-28 NL NL9000478A patent/NL193259C/nl not_active IP Right Cessation
- 1990-02-28 FR FR9002522A patent/FR2648290B1/fr not_active Expired - Lifetime
- 1990-05-29 IT IT02045990A patent/IT1248660B/it active IP Right Grant
- 1990-06-02 CN CN90104070A patent/CN1018402B/zh not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| FR2648290A1 (fr) | 1990-12-14 |
| US5027324A (en) | 1991-06-25 |
| JPH0312894A (ja) | 1991-01-21 |
| GB2232516B (en) | 1993-12-15 |
| KR920001325B1 (ko) | 1992-02-10 |
| NL9000478A (nl) | 1991-01-02 |
| JPH07105141B2 (ja) | 1995-11-13 |
| NL193259C (nl) | 1999-04-02 |
| DE4006702A1 (de) | 1990-12-20 |
| DE4006702C2 (de) | 1994-06-09 |
| CN1018402B (zh) | 1992-09-23 |
| CN1048118A (zh) | 1990-12-26 |
| NL193259B (nl) | 1998-12-01 |
| GB2232516A (en) | 1990-12-12 |
| IT1248660B (it) | 1995-01-26 |
| FR2648290B1 (fr) | 1993-07-30 |
| KR910001746A (ko) | 1991-01-31 |
| GB9004461D0 (en) | 1990-04-25 |
| IT9020459A1 (it) | 1991-11-29 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| 0001 | Granted | ||
| TA | Fee payment date (situation as of event date), data collected since 19931001 |
Effective date: 19970529 |