IT8019078A0 - Procedimento per la fabbricazione di un dispositivo semiconduttore ad ossido metallico con contatti autoallineati. - Google Patents

Procedimento per la fabbricazione di un dispositivo semiconduttore ad ossido metallico con contatti autoallineati.

Info

Publication number
IT8019078A0
IT8019078A0 IT8019078A IT1907880A IT8019078A0 IT 8019078 A0 IT8019078 A0 IT 8019078A0 IT 8019078 A IT8019078 A IT 8019078A IT 1907880 A IT1907880 A IT 1907880A IT 8019078 A0 IT8019078 A0 IT 8019078A0
Authority
IT
Italy
Prior art keywords
self
procedure
manufacturing
semiconductor device
oxide semiconductor
Prior art date
Application number
IT8019078A
Other languages
English (en)
Italian (it)
Inventor
Batra Tarsaim Lal
Original Assignee
American Micro Syst
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by American Micro Syst filed Critical American Micro Syst
Publication of IT8019078A0 publication Critical patent/IT8019078A0/it

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/0223—Manufacture or treatment of FETs having insulated gates [IGFET] having source and drain regions or source and drain extensions self-aligned to sides of the gate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B20/00—Read-only memory [ROM] devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10W10/0126—
    • H10W10/13—
IT8019078A 1979-01-08 1980-01-08 Procedimento per la fabbricazione di un dispositivo semiconduttore ad ossido metallico con contatti autoallineati. IT8019078A0 (it)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US184079A 1979-01-08 1979-01-08

Publications (1)

Publication Number Publication Date
IT8019078A0 true IT8019078A0 (it) 1980-01-08

Family

ID=21698078

Family Applications (1)

Application Number Title Priority Date Filing Date
IT8019078A IT8019078A0 (it) 1979-01-08 1980-01-08 Procedimento per la fabbricazione di un dispositivo semiconduttore ad ossido metallico con contatti autoallineati.

Country Status (7)

Country Link
JP (1) JPS5593271A (enExample)
CA (1) CA1131796A (enExample)
DE (1) DE3000121A1 (enExample)
FR (1) FR2446011A1 (enExample)
GB (1) GB2040564A (enExample)
IT (1) IT8019078A0 (enExample)
NL (1) NL7908534A (enExample)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4455737A (en) * 1978-05-26 1984-06-26 Rockwell International Corporation Process for and structure of high density VLSI circuits, having self-aligned gates and contacts for FET devices and conducting lines
US4506437A (en) * 1978-05-26 1985-03-26 Rockwell International Corporation Process for and structure of high density VLSI circuits, having self-aligned gates and contacts for FET devices and conducting lines
US4409722A (en) * 1980-08-29 1983-10-18 International Business Machines Corporation Borderless diffusion contact process and structure
US4341009A (en) * 1980-12-05 1982-07-27 International Business Machines Corporation Method for making an electrical contact to a silicon substrate through a relatively thin layer of silicon dioxide on the surface of the substrate
JPS57113289A (en) * 1980-12-30 1982-07-14 Fujitsu Ltd Semiconductor device and its manufacture
US4517729A (en) * 1981-07-27 1985-05-21 American Microsystems, Incorporated Method for fabricating MOS device with self-aligned contacts
US4686000A (en) * 1985-04-02 1987-08-11 Heath Barbara A Self-aligned contact process
JPS63207171A (ja) * 1987-02-24 1988-08-26 Nippon Telegr & Teleph Corp <Ntt> 半導体メモリ装置及びその製造方法
US5159353A (en) * 1991-07-02 1992-10-27 Hewlett-Packard Company Thermal inkjet printhead structure and method for making the same
KR100377833B1 (ko) * 2001-06-19 2003-03-29 삼성전자주식회사 보더리스 콘택 구조를 갖는 반도체 장치 및 그 제조방법

Also Published As

Publication number Publication date
DE3000121A1 (de) 1980-07-17
NL7908534A (nl) 1980-07-10
FR2446011B3 (enExample) 1981-11-06
CA1131796A (en) 1982-09-14
FR2446011A1 (fr) 1980-08-01
JPS5593271A (en) 1980-07-15
GB2040564A (en) 1980-08-28

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