IT1314251B1 - Dispositivo per il trattamento di un substrato nastriforme con gas. - Google Patents

Dispositivo per il trattamento di un substrato nastriforme con gas.

Info

Publication number
IT1314251B1
IT1314251B1 IT1999MI002521A ITMI992521A IT1314251B1 IT 1314251 B1 IT1314251 B1 IT 1314251B1 IT 1999MI002521 A IT1999MI002521 A IT 1999MI002521A IT MI992521 A ITMI992521 A IT MI992521A IT 1314251 B1 IT1314251 B1 IT 1314251B1
Authority
IT
Italy
Prior art keywords
treatment
gas
based substrate
substrate
Prior art date
Application number
IT1999MI002521A
Other languages
English (en)
Inventor
Eller Detlef
Original Assignee
Leybold Systems Gmbh
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Leybold Systems Gmbh filed Critical Leybold Systems Gmbh
Publication of ITMI992521A0 publication Critical patent/ITMI992521A0/it
Publication of ITMI992521A1 publication Critical patent/ITMI992521A1/it
Application granted granted Critical
Publication of IT1314251B1 publication Critical patent/IT1314251B1/it

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/20—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/04—Coating on selected surface areas, e.g. using masks
    • C23C14/042—Coating on selected surface areas, e.g. using masks using masks
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
    • C23C14/562—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks for coating elongated substrates

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physical Vapour Deposition (AREA)
  • Chemical Vapour Deposition (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Physical Or Chemical Processes And Apparatus (AREA)
  • Coating Apparatus (AREA)
  • Application Of Or Painting With Fluid Materials (AREA)
IT1999MI002521A 1999-01-14 1999-12-02 Dispositivo per il trattamento di un substrato nastriforme con gas. IT1314251B1 (it)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE19901088A DE19901088B4 (de) 1999-01-14 1999-01-14 Vorrichtung zum Behandeln eines bandförmigen Substrates mit einem Gas

Publications (3)

Publication Number Publication Date
ITMI992521A0 ITMI992521A0 (it) 1999-12-02
ITMI992521A1 ITMI992521A1 (it) 2001-06-02
IT1314251B1 true IT1314251B1 (it) 2002-12-06

Family

ID=7894179

Family Applications (1)

Application Number Title Priority Date Filing Date
IT1999MI002521A IT1314251B1 (it) 1999-01-14 1999-12-02 Dispositivo per il trattamento di un substrato nastriforme con gas.

Country Status (6)

Country Link
US (1) US6328806B2 (it)
JP (1) JP2000226656A (it)
KR (1) KR100639935B1 (it)
DE (1) DE19901088B4 (it)
GB (1) GB2345700B (it)
IT (1) IT1314251B1 (it)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6821348B2 (en) * 2002-02-14 2004-11-23 3M Innovative Properties Company In-line deposition processes for circuit fabrication
US7247221B2 (en) * 2002-05-17 2007-07-24 Applied Films Corporation System and apparatus for control of sputter deposition process
US7153180B2 (en) * 2003-11-13 2006-12-26 Eastman Kodak Company Continuous manufacture of flat panel light emitting devices
JP4455937B2 (ja) * 2004-06-01 2010-04-21 東北パイオニア株式会社 成膜源、真空成膜装置、有機ｅｌパネルの製造方法
KR100744912B1 (ko) * 2006-05-26 2007-08-01 삼성전기주식회사 자가조정 기능을 갖는 ｒｃ 발진기
US20080011225A1 (en) * 2006-07-11 2008-01-17 Mcclure Donald J Apparatus and methods for continuously depositing a pattern of material onto a substrate
CN102016103B (zh) * 2008-02-15 2012-10-24 松下电器产业株式会社 薄膜形成方法及成膜装置
US20120090544A1 (en) * 2010-10-18 2012-04-19 Kim Mu-Gyeom Thin film deposition apparatus for continuous deposition, and mask unit and crucible unit included in thin film deposition apparatus
CN204162778U (zh) * 2014-10-09 2015-02-18 香港纺织及成衣研发中心有限公司 一种可生成图案的磁控溅射卷绕镀膜机
TWI780815B (zh) * 2021-07-13 2022-10-11 聚合興企業有限公司 複合材料樹脂塊自動供膠系統

Family Cites Families (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE869661C (de) * 1944-09-15 1953-03-05 Hydrawerk Ag Verfahren und Vorrichtung zur Verhinderung der Metallisierung auf Unterlagen mit Hilfe einer Abdeckvorrichtung
US2590557A (en) * 1949-11-15 1952-03-25 John E Fast & Co Metallizing process and apparatus
US3511212A (en) * 1968-05-16 1970-05-12 Du Pont Vapor deposition apparatus including a polyimide containing mask
US3738315A (en) * 1969-12-03 1973-06-12 Western Electric Co Coating apparatus including conveyor-mask
US3799792A (en) * 1971-12-14 1974-03-26 Texas Instruments Inc Vapor deposition method
US4265932A (en) * 1979-08-02 1981-05-05 Hughes Aircraft Company Mobile transparent window apparatus and method for photochemical vapor deposition
JPS5989765A (ja) * 1982-11-12 1984-05-24 Hitachi Ltd 薄膜パタ−ン連続成膜装置
JPS59177365A (ja) * 1983-03-24 1984-10-08 Matsushita Electric Ind Co Ltd 蒸発方法とその装置
US4681780A (en) * 1983-12-01 1987-07-21 Polaroid Corporation Continuously cleaned rotary coating mask
JPS61143577A (ja) * 1984-12-14 1986-07-01 Konishiroku Photo Ind Co Ltd 薄膜形成装置
JPS61261471A (ja) * 1985-05-13 1986-11-19 Sumitomo Electric Ind Ltd 部分被覆方法
EP0488535A3 (en) 1990-11-08 1992-09-23 Bmc Technology Corporation Method and apparatus for manufacturing electrodes for multilayer ceramic capacitors
JPH0578818A (ja) * 1991-09-19 1993-03-30 Hitachi Cable Ltd 部分被膜の形成方法
JPH05295524A (ja) * 1992-04-23 1993-11-09 Mitsubishi Heavy Ind Ltd 連続真空蒸着装置
DE4311581A1 (de) 1993-03-27 1994-12-08 Leybold Ag Verfahren und Vorrichtung zur Erzeugung von Muster auf Substraten
DE4310085A1 (de) 1993-03-27 1994-09-29 Leybold Ag Verfahren und Vorrichtung zur Erzeugung von Mustern auf Substraten
JP3281703B2 (ja) * 1994-01-12 2002-05-13 三菱重工業株式会社 真空蒸着装置
DE19527604A1 (de) 1995-07-28 1997-01-30 Leybold Ag Verfahren und Vorrichtung zur Herstellung von metallfreien Streifen bei der Metallbedampfung
JPH09310172A (ja) * 1996-05-21 1997-12-02 Matsushita Electric Ind Co Ltd 樹脂薄膜の製造方法及び製造装置及び電子部品

Also Published As

Publication number Publication date
ITMI992521A1 (it) 2001-06-02
US6328806B2 (en) 2001-12-11
GB2345700A (en) 2000-07-19
KR100639935B1 (ko) 2006-10-31
ITMI992521A0 (it) 1999-12-02
GB2345700B (en) 2003-07-09
GB0000660D0 (en) 2000-03-01
DE19901088A1 (de) 2000-07-20
US20010002583A1 (en) 2001-06-07
DE19901088B4 (de) 2008-11-27
JP2000226656A (ja) 2000-08-15
KR20000052432A (ko) 2000-08-25

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