IT1312269B1 - Cella di memoria non volatile ferroelettrica integrata su unsubstrato semiconduttore - Google Patents

Cella di memoria non volatile ferroelettrica integrata su unsubstrato semiconduttore

Info

Publication number
IT1312269B1
IT1312269B1 IT1999MI000919A ITMI990919A IT1312269B1 IT 1312269 B1 IT1312269 B1 IT 1312269B1 IT 1999MI000919 A IT1999MI000919 A IT 1999MI000919A IT MI990919 A ITMI990919 A IT MI990919A IT 1312269 B1 IT1312269 B1 IT 1312269B1
Authority
IT
Italy
Prior art keywords
memory cell
semiconductor substrate
volatile memory
ferroelectric non
integrated ferroelectric
Prior art date
Application number
IT1999MI000919A
Other languages
English (en)
Inventor
Raffaele Zambrano
Chiara Corvasce
Original Assignee
St Microelectronics Srl
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by St Microelectronics Srl filed Critical St Microelectronics Srl
Priority to IT1999MI000919A priority Critical patent/IT1312269B1/it
Priority to US09/561,331 priority patent/US6366488B1/en
Publication of ITMI990919A1 publication Critical patent/ITMI990919A1/it
Application granted granted Critical
Publication of IT1312269B1 publication Critical patent/IT1312269B1/it

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/22—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using ferroelectric elements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B53/00—Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory capacitors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B53/00—Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory capacitors
    • H10B53/30—Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory capacitors characterised by the memory core region

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Non-Volatile Memory (AREA)
  • Semiconductor Memories (AREA)
IT1999MI000919A 1999-04-30 1999-04-30 Cella di memoria non volatile ferroelettrica integrata su unsubstrato semiconduttore IT1312269B1 (it)

Priority Applications (2)

Application Number Priority Date Filing Date Title
IT1999MI000919A IT1312269B1 (it) 1999-04-30 1999-04-30 Cella di memoria non volatile ferroelettrica integrata su unsubstrato semiconduttore
US09/561,331 US6366488B1 (en) 1999-04-30 2000-04-28 Ferroelectric non-volatile memory cell integrated in a semiconductor substrate

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
IT1999MI000919A IT1312269B1 (it) 1999-04-30 1999-04-30 Cella di memoria non volatile ferroelettrica integrata su unsubstrato semiconduttore

Publications (2)

Publication Number Publication Date
ITMI990919A1 ITMI990919A1 (it) 2000-10-30
IT1312269B1 true IT1312269B1 (it) 2002-04-10

Family

ID=11382849

Family Applications (1)

Application Number Title Priority Date Filing Date
IT1999MI000919A IT1312269B1 (it) 1999-04-30 1999-04-30 Cella di memoria non volatile ferroelettrica integrata su unsubstrato semiconduttore

Country Status (2)

Country Link
US (1) US6366488B1 (it)
IT (1) IT1312269B1 (it)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1225024C (zh) * 2000-07-25 2005-10-26 松下电器产业株式会社 半导体存储装置及其驱动方法
JP4481464B2 (ja) * 2000-09-20 2010-06-16 株式会社東芝 半導体記憶装置及びその製造方法
DE10057806B4 (de) * 2000-11-22 2007-10-11 Infineon Technologies Ag Ferroelektrische Speicheranordnung und Verfahren zu ihrer Herstellung

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3766181B2 (ja) * 1996-06-10 2006-04-12 株式会社東芝 半導体記憶装置とそれを搭載したシステム

Also Published As

Publication number Publication date
US6366488B1 (en) 2002-04-02
ITMI990919A1 (it) 2000-10-30

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