IT1258416B - Dispositivo a semiconduttore controllabile con limitazione di correnteintegrata e diseccitazione in caso di sovratemperatura - Google Patents

Dispositivo a semiconduttore controllabile con limitazione di correnteintegrata e diseccitazione in caso di sovratemperatura

Info

Publication number
IT1258416B
IT1258416B ITRM920518A ITRM920518A IT1258416B IT 1258416 B IT1258416 B IT 1258416B IT RM920518 A ITRM920518 A IT RM920518A IT RM920518 A ITRM920518 A IT RM920518A IT 1258416 B IT1258416 B IT 1258416B
Authority
IT
Italy
Prior art keywords
excitation
event
semiconductor device
integrated current
over temperature
Prior art date
Application number
ITRM920518A
Other languages
English (en)
Inventor
Alf Blessing
Original Assignee
Daimler Benz Ag
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Daimler Benz Ag filed Critical Daimler Benz Ag
Publication of ITRM920518A0 publication Critical patent/ITRM920518A0/it
Publication of ITRM920518A1 publication Critical patent/ITRM920518A1/it
Application granted granted Critical
Publication of IT1258416B publication Critical patent/IT1258416B/it

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/12—Modifications for increasing the maximum permissible switched current
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/08—Modifications for protecting switching circuit against overcurrent or overvoltage
    • H03K17/081—Modifications for protecting switching circuit against overcurrent or overvoltage without feedback from the output circuit to the control circuit
    • H03K17/0812—Modifications for protecting switching circuit against overcurrent or overvoltage without feedback from the output circuit to the control circuit by measures taken in the control circuit
    • H03K17/08122—Modifications for protecting switching circuit against overcurrent or overvoltage without feedback from the output circuit to the control circuit by measures taken in the control circuit in field-effect transistor switches
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Semiconductor Integrated Circuits (AREA)
  • Electronic Switches (AREA)
  • Protection Of Static Devices (AREA)

Abstract

Viene descritto un dispositivo di comando a semiconduttore con limitazione di intensità di corrente integrata e disinserzione in caso di sovratemperatura. Esso comprende, fra l'altro, un segmento di circuito formato da una quantità di celle di regolazione che agiscono in parallelo, dove, in presenza di limitazioni di intensità di corrente attiva, determinate celle di regolazione disposte nelle immediate vicinanze di un elemento che rileva la temperatura del chip, subiscono un carico di corrente specificamente più elevato che in tutti gli altri.Il dispositivo di comando presenta il vantaggio di reagire in modo più sicuro e più rapido di una disinserzione in caso di sovratemperatura e rende superflua una limitazione della capacità di carico di corrente del segmento di circuito vero e proprio allo scopo di favorire una funzione limitatrice di sovratemperatura. In questo modo, da un lato, si ottiene una maggiore affidabilità e una migliore resistenza al corto circuito e, dall'altro lato, si può aumentare la corrente di contatto utilizzabile in dipendenza della superficie del chip e la potenza di rottura.
ITRM920518A 1991-07-09 1992-07-08 Dispositivo a semiconduttore controllabile con limitazione di correnteintegrata e diseccitazione in caso di sovratemperatura IT1258416B (it)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE4122653A DE4122653C2 (de) 1991-07-09 1991-07-09 Steuerbare Halbleiterschalteinrichtung mit integrierter Strombegrenzung und Übertemperaturabschaltung

Publications (3)

Publication Number Publication Date
ITRM920518A0 ITRM920518A0 (it) 1992-07-08
ITRM920518A1 ITRM920518A1 (it) 1994-01-08
IT1258416B true IT1258416B (it) 1996-02-26

Family

ID=6435732

Family Applications (1)

Application Number Title Priority Date Filing Date
ITRM920518A IT1258416B (it) 1991-07-09 1992-07-08 Dispositivo a semiconduttore controllabile con limitazione di correnteintegrata e diseccitazione in caso di sovratemperatura

Country Status (6)

Country Link
US (1) US5187632A (it)
JP (1) JPH0656875B2 (it)
DE (1) DE4122653C2 (it)
FR (1) FR2679082B1 (it)
GB (1) GB2258357B (it)
IT (1) IT1258416B (it)

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FR2697115B1 (fr) * 1992-10-21 1995-01-06 Sgs Thomson Microelectronics Circuit de détection de charge ouverte.
DE4305038C2 (de) * 1993-02-18 1998-02-05 Siemens Ag MOSFET mit Temperaturschutz
EP0664613B1 (de) * 1994-01-22 2002-02-20 DaimlerChrysler Rail Systems GmbH Verfahren und Vorrichtung zur Symmetrierung der Belastung parallelgeschalteter Leistungshalbleitermodule
DE4403941C2 (de) * 1994-02-08 2000-05-18 Abb Schweiz Ag Verfahren und Schaltungsanordnung zur Ansteuerung von Halbleiterschaltern einer Reihenschaltung
DE19519477C2 (de) * 1995-05-27 1998-07-09 Bosch Gmbh Robert Integrierte Schaltung mit thermischem Überlastschutz, insb. geeignet für KfZ-Zündspulenansteuerung
DE19522517C1 (de) * 1995-06-21 1996-11-28 Siemens Ag Schaltungsanordnung zum Abschalten eines Leistungs-MOSFET bei Übertemperatur
EP0763895B1 (de) * 1995-09-14 2003-11-12 Infineon Technologies AG Schaltungsanordnung und Halbleiterkörper mit einem Leistungsschalter
DE19534604C1 (de) * 1995-09-18 1996-10-24 Siemens Ag Durch Feldeffekt steuerbares Halbleiterbauelement mit mehreren Temperatursensoren zum Schutz vor Überlastung
JP3429937B2 (ja) * 1996-01-12 2003-07-28 三菱電機株式会社 半導体装置
CN1067495C (zh) * 1996-03-07 2001-06-20 精工爱普生株式会社 电动机及其制造方法
DE19609967C2 (de) * 1996-03-14 2001-05-10 Daimler Chrysler Ag Schaltungsanordnung zum Schützen einer Schaltstufe vor thermischer Überlastung
EP0808025B1 (en) * 1996-05-17 2004-11-10 Denso Corporation Load actuation circuit
EP0809295B1 (de) * 1996-05-21 2003-04-02 Infineon Technologies AG MOSFET mit Temperaturschutz
GB9614590D0 (en) * 1996-07-11 1996-09-04 Smiths Industries Plc Electrical apparatus
DE19704861A1 (de) * 1997-02-10 1998-08-27 Daimler Benz Ag Steuerbare Schalteinrichtung, Anordnung und Verfahren zum Betreiben einer Schalteinrichtung, insbesondere für Leistungshalbleiter
US5943206A (en) * 1997-08-19 1999-08-24 Advanced Micro Devices, Inc. Chip temperature protection using delay lines
JP3008924B2 (ja) 1998-04-10 2000-02-14 富士電機株式会社 パワー素子のドライブ回路
DE19832558B4 (de) 1998-07-20 2005-10-06 Infineon Technologies Ag Halbleiteranordnung mit mindestens einem Halbleiterchip
US6153948A (en) * 1998-08-13 2000-11-28 Cogan; Adrian I. Electronic circuits with wide dynamic range of on/off delay time
US6137165A (en) * 1999-06-25 2000-10-24 International Rectifier Corp. Hybrid package including a power MOSFET die and a control and protection circuit die with a smaller sense MOSFET
JP3637848B2 (ja) 1999-09-30 2005-04-13 株式会社デンソー 負荷駆動回路
DE10103919B4 (de) * 2001-01-30 2014-10-16 Infineon Technologies Ag Leistungstransistor mit einer Temperaturschutzschaltung und Verfahren zur temperaturabhängigen Ansteuerung eines Leistungstransistors
JP3845261B2 (ja) * 2001-02-28 2006-11-15 矢崎総業株式会社 自動車用電気負荷駆動制御装置
AT410867B (de) * 2001-04-06 2003-08-25 Siemens Ag Oesterreich Spannungsversorgung mit abschaltsicherung
DE10245484B4 (de) * 2002-09-30 2004-07-22 Infineon Technologies Ag Verfahren zur Ansteuerung eines Halbleiterschalters und Schaltungsanordnung mit einem Halbleiterschalter
US7839201B2 (en) * 2005-04-01 2010-11-23 Raytheon Company Integrated smart power switch
DE102009041512B4 (de) * 2008-09-12 2014-02-13 Infineon Technologies Ag Vorspannen eines Transistors außerhalb eines Versorgungsspannungsbereiches
US9112494B2 (en) * 2011-07-28 2015-08-18 Infineon Technologies Ag Charge pump driven electronic switch with rapid turn off
US9030054B2 (en) 2012-03-27 2015-05-12 Raytheon Company Adaptive gate drive control method and circuit for composite power switch
JP2015177591A (ja) * 2014-03-13 2015-10-05 富士電機株式会社 半導体装置及び半導体システム
CN105988489B (zh) * 2015-02-02 2018-06-26 佛山市顺德区美的电热电器制造有限公司 电加热器驱动保护电路
US9917578B2 (en) * 2016-02-19 2018-03-13 Infineon Technologies Austria Ag Active gate-source capacitance clamp for normally-off HEMT
JP2021034839A (ja) * 2019-08-22 2021-03-01 株式会社オートネットワーク技術研究所 スイッチ装置
GB2597738A (en) 2020-07-31 2022-02-09 Aptiv Tech Ltd A method and switching circuit for connecting and disconnecting current to a load having inductance

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Publication number Priority date Publication date Assignee Title
IT1202895B (it) * 1979-02-27 1989-02-15 Ates Componenti Elettron Dispositivo di protezione termica per un componente elettronico a semiconduttore
JPH0693485B2 (ja) * 1985-11-29 1994-11-16 日本電装株式会社 半導体装置
US4893158A (en) * 1987-06-22 1990-01-09 Nissan Motor Co., Ltd. MOSFET device
JP2521783B2 (ja) * 1987-09-28 1996-08-07 三菱電機株式会社 半導体装置およびその製造方法
JP2656537B2 (ja) * 1988-04-13 1997-09-24 株式会社日立製作所 電力用半導体装置
JPH0266975A (ja) * 1988-09-01 1990-03-07 Fuji Electric Co Ltd 半導体装置
US5063307A (en) * 1990-09-20 1991-11-05 Ixys Corporation Insulated gate transistor devices with temperature and current sensor

Also Published As

Publication number Publication date
US5187632A (en) 1993-02-16
GB9213799D0 (en) 1992-08-12
JPH0656875B2 (ja) 1994-07-27
FR2679082B1 (fr) 1994-06-17
GB2258357A (en) 1993-02-03
GB2258357B (en) 1995-06-28
ITRM920518A0 (it) 1992-07-08
JPH05190760A (ja) 1993-07-30
ITRM920518A1 (it) 1994-01-08
DE4122653C2 (de) 1996-04-11
DE4122653A1 (de) 1993-01-28
FR2679082A1 (fr) 1993-01-15

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Legal Events

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0001 Granted
TA Fee payment date (situation as of event date), data collected since 19931001

Effective date: 19970718