IT1185964B - Procedimento e relativa apparecchiatura per realizzare contatti metallo-semiconduttore di tipo ohmico - Google Patents

Procedimento e relativa apparecchiatura per realizzare contatti metallo-semiconduttore di tipo ohmico

Info

Publication number
IT1185964B
IT1185964B IT22325/85A IT2232585A IT1185964B IT 1185964 B IT1185964 B IT 1185964B IT 22325/85 A IT22325/85 A IT 22325/85A IT 2232585 A IT2232585 A IT 2232585A IT 1185964 B IT1185964 B IT 1185964B
Authority
IT
Italy
Prior art keywords
procedure
related equipment
ohmic metal
make ohmic
semiconductor contacts
Prior art date
Application number
IT22325/85A
Other languages
English (en)
Italian (it)
Other versions
IT8522325A0 (it
Inventor
Giulio Iannuzzi
Original Assignee
Sgs Microelettronica Spa
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sgs Microelettronica Spa filed Critical Sgs Microelettronica Spa
Priority to IT22325/85A priority Critical patent/IT1185964B/it
Publication of IT8522325A0 publication Critical patent/IT8522325A0/it
Priority to GB8620131A priority patent/GB2181297B/en
Priority to NL8602453A priority patent/NL8602453A/nl
Priority to FR8613608A priority patent/FR2588120A1/fr
Priority to JP61234265A priority patent/JPS6286716A/ja
Priority to DE19863633472 priority patent/DE3633472A1/de
Application granted granted Critical
Publication of IT1185964B publication Critical patent/IT1185964B/it

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3065—Plasma etching; Reactive-ion etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
    • H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
    • H01L21/28512—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Plasma & Fusion (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
IT22325/85A 1985-10-01 1985-10-01 Procedimento e relativa apparecchiatura per realizzare contatti metallo-semiconduttore di tipo ohmico IT1185964B (it)

Priority Applications (6)

Application Number Priority Date Filing Date Title
IT22325/85A IT1185964B (it) 1985-10-01 1985-10-01 Procedimento e relativa apparecchiatura per realizzare contatti metallo-semiconduttore di tipo ohmico
GB8620131A GB2181297B (en) 1985-10-01 1986-08-19 Process and relative apparatus for making ohmic type contacts between metal and semiconductor
NL8602453A NL8602453A (nl) 1985-10-01 1986-09-29 Werkwijze en inrichting voor het maken van kontakten van het ohmse type tussen metaal en halfgeleider.
FR8613608A FR2588120A1 (fr) 1985-10-01 1986-09-30 Procede et appareil correspondant pour etablir des contacts de type ohmique entre un metal et un semi-conducteur
JP61234265A JPS6286716A (ja) 1985-10-01 1986-09-30 金属と半導体の間にオ−ム型接続を形成するための方法及びその装置
DE19863633472 DE3633472A1 (de) 1985-10-01 1986-10-01 Verfahren und vorrichtung zur herstellung ohmscher kontakte zwischen metallen und halbleitern

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
IT22325/85A IT1185964B (it) 1985-10-01 1985-10-01 Procedimento e relativa apparecchiatura per realizzare contatti metallo-semiconduttore di tipo ohmico

Publications (2)

Publication Number Publication Date
IT8522325A0 IT8522325A0 (it) 1985-10-01
IT1185964B true IT1185964B (it) 1987-11-18

Family

ID=11194694

Family Applications (1)

Application Number Title Priority Date Filing Date
IT22325/85A IT1185964B (it) 1985-10-01 1985-10-01 Procedimento e relativa apparecchiatura per realizzare contatti metallo-semiconduttore di tipo ohmico

Country Status (6)

Country Link
JP (1) JPS6286716A (fr)
DE (1) DE3633472A1 (fr)
FR (1) FR2588120A1 (fr)
GB (1) GB2181297B (fr)
IT (1) IT1185964B (fr)
NL (1) NL8602453A (fr)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5043299B1 (en) * 1989-12-01 1997-02-25 Applied Materials Inc Process for selective deposition of tungsten on semiconductor wafer
US5478780A (en) * 1990-03-30 1995-12-26 Siemens Aktiengesellschaft Method and apparatus for producing conductive layers or structures for VLSI circuits
EP0448763A1 (fr) * 1990-03-30 1991-10-02 Siemens Aktiengesellschaft Procédé et appareil pour la fabrication de couches ou structures conductrices pour circuits semi-conducteurs ayant la plus haute densité d'intégration
DE69121451T2 (de) * 1990-04-16 1997-02-20 Applied Materials Inc Verfahren zum Herstellen einer Titansilizidschicht auf einer Halbleiterschicht
DE4339465C2 (de) * 1993-11-19 1997-05-28 Gold Star Electronics Verfahren zur Behandlung der Oberfläche eines einer Trockenätzung ausgesetzten Siliciumsubstrats

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1177382A (en) * 1966-02-24 1970-01-14 Rca Corp Formerly Known As Rad Method of Making Ohmic Contact to a Semiconductor Body
BE758321A (fr) * 1969-11-03 1971-04-01 Rca Corp Procede de metallisation de dispositifs a semi-conducteurs
CA965189A (en) * 1972-01-03 1975-03-25 Signetics Corporation Semiconductor structure using platinel silicide as a schottky barrier diode and method
US4056642A (en) * 1976-05-14 1977-11-01 Data General Corporation Method of fabricating metal-semiconductor interfaces
US4107835A (en) * 1977-02-11 1978-08-22 Bell Telephone Laboratories, Incorporated Fabrication of semiconductive devices
DE3103615A1 (de) * 1981-02-03 1982-09-09 Siemens AG, 1000 Berlin und 8000 München Verfahren zur erzeugung von extremen feinstrukturen
JPS57157525A (en) * 1981-03-23 1982-09-29 Fujitsu Ltd Surface treating method
JPS6077429A (ja) * 1983-10-04 1985-05-02 Asahi Glass Co Ltd ドライエツチング方法
US4693777A (en) * 1984-11-30 1987-09-15 Kabushiki Kaisha Toshiba Apparatus for producing semiconductor devices
US4824518A (en) * 1985-03-29 1989-04-25 Sharp Kabushiki Kaisha Method for the production of semiconductor devices
US4605479A (en) * 1985-06-24 1986-08-12 Rca Corporation In-situ cleaned ohmic contacts

Also Published As

Publication number Publication date
GB2181297B (en) 1989-06-07
FR2588120A1 (fr) 1987-04-03
GB8620131D0 (en) 1986-10-01
NL8602453A (nl) 1987-05-04
IT8522325A0 (it) 1985-10-01
GB2181297A (en) 1987-04-15
DE3633472A1 (de) 1987-04-02
JPS6286716A (ja) 1987-04-21

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TA Fee payment date (situation as of event date), data collected since 19931001

Effective date: 19971030