GB8620131D0 - Making contacts between metal & semiconductor - Google Patents
Making contacts between metal & semiconductorInfo
- Publication number
- GB8620131D0 GB8620131D0 GB868620131A GB8620131A GB8620131D0 GB 8620131 D0 GB8620131 D0 GB 8620131D0 GB 868620131 A GB868620131 A GB 868620131A GB 8620131 A GB8620131 A GB 8620131A GB 8620131 D0 GB8620131 D0 GB 8620131D0
- Authority
- GB
- United Kingdom
- Prior art keywords
- semiconductor
- metal
- making contacts
- contacts
- making
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000002184 metal Substances 0.000 title 1
- 239000004065 semiconductor Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/3065—Plasma etching; Reactive-ion etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
- H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
- H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
- H01L21/28512—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Plasma & Fusion (AREA)
- Electrodes Of Semiconductors (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
IT22325/85A IT1185964B (en) | 1985-10-01 | 1985-10-01 | PROCEDURE AND RELATED EQUIPMENT TO MAKE OHMIC METAL-SEMICONDUCTOR CONTACTS |
Publications (3)
Publication Number | Publication Date |
---|---|
GB8620131D0 true GB8620131D0 (en) | 1986-10-01 |
GB2181297A GB2181297A (en) | 1987-04-15 |
GB2181297B GB2181297B (en) | 1989-06-07 |
Family
ID=11194694
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
GB8620131A Expired GB2181297B (en) | 1985-10-01 | 1986-08-19 | Process and relative apparatus for making ohmic type contacts between metal and semiconductor |
Country Status (6)
Country | Link |
---|---|
JP (1) | JPS6286716A (en) |
DE (1) | DE3633472A1 (en) |
FR (1) | FR2588120A1 (en) |
GB (1) | GB2181297B (en) |
IT (1) | IT1185964B (en) |
NL (1) | NL8602453A (en) |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5043299B1 (en) * | 1989-12-01 | 1997-02-25 | Applied Materials Inc | Process for selective deposition of tungsten on semiconductor wafer |
US5478780A (en) * | 1990-03-30 | 1995-12-26 | Siemens Aktiengesellschaft | Method and apparatus for producing conductive layers or structures for VLSI circuits |
EP0448763A1 (en) * | 1990-03-30 | 1991-10-02 | Siemens Aktiengesellschaft | Process and apparatus for manufacturing conductive layers or structures for highly integrated circuits |
DE69121451T2 (en) * | 1990-04-16 | 1997-02-20 | Applied Materials Inc | Method for producing a titanium silicide layer on a semiconductor layer |
DE4339465C2 (en) * | 1993-11-19 | 1997-05-28 | Gold Star Electronics | Process for treating the surface of a silicon substrate exposed to dry etching |
Family Cites Families (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB1177382A (en) * | 1966-02-24 | 1970-01-14 | Rca Corp Formerly Known As Rad | Method of Making Ohmic Contact to a Semiconductor Body |
BE758321A (en) * | 1969-11-03 | 1971-04-01 | Rca Corp | PROCESS FOR METALLIZING SEMICONDUCTOR DEVICES |
CA965189A (en) * | 1972-01-03 | 1975-03-25 | Signetics Corporation | Semiconductor structure using platinel silicide as a schottky barrier diode and method |
US4056642A (en) * | 1976-05-14 | 1977-11-01 | Data General Corporation | Method of fabricating metal-semiconductor interfaces |
US4107835A (en) * | 1977-02-11 | 1978-08-22 | Bell Telephone Laboratories, Incorporated | Fabrication of semiconductive devices |
DE3103615A1 (en) * | 1981-02-03 | 1982-09-09 | Siemens AG, 1000 Berlin und 8000 München | METHOD FOR GENERATING EXTREME FINE STRUCTURES |
JPS57157525A (en) * | 1981-03-23 | 1982-09-29 | Fujitsu Ltd | Surface treating method |
JPS6077429A (en) * | 1983-10-04 | 1985-05-02 | Asahi Glass Co Ltd | Dry etching method |
US4693777A (en) * | 1984-11-30 | 1987-09-15 | Kabushiki Kaisha Toshiba | Apparatus for producing semiconductor devices |
US4824518A (en) * | 1985-03-29 | 1989-04-25 | Sharp Kabushiki Kaisha | Method for the production of semiconductor devices |
US4605479A (en) * | 1985-06-24 | 1986-08-12 | Rca Corporation | In-situ cleaned ohmic contacts |
-
1985
- 1985-10-01 IT IT22325/85A patent/IT1185964B/en active
-
1986
- 1986-08-19 GB GB8620131A patent/GB2181297B/en not_active Expired
- 1986-09-29 NL NL8602453A patent/NL8602453A/en not_active Application Discontinuation
- 1986-09-30 JP JP61234265A patent/JPS6286716A/en active Pending
- 1986-09-30 FR FR8613608A patent/FR2588120A1/en not_active Withdrawn
- 1986-10-01 DE DE19863633472 patent/DE3633472A1/en not_active Withdrawn
Also Published As
Publication number | Publication date |
---|---|
GB2181297A (en) | 1987-04-15 |
DE3633472A1 (en) | 1987-04-02 |
NL8602453A (en) | 1987-05-04 |
IT8522325A0 (en) | 1985-10-01 |
IT1185964B (en) | 1987-11-18 |
FR2588120A1 (en) | 1987-04-03 |
GB2181297B (en) | 1989-06-07 |
JPS6286716A (en) | 1987-04-21 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
GB2167229B (en) | Semiconductor devices | |
GB8510113D0 (en) | Manufacturing metals | |
GB8417646D0 (en) | Electrical contacts | |
GB2166904B (en) | Semiconductor devices | |
EP0166390A3 (en) | Semiconductor switch circuit | |
GB8508932D0 (en) | Semiconductor | |
EP0165513A3 (en) | Semiconductor contact metal protection | |
EP0176226A3 (en) | Semiconductor circuit | |
EP0316793A3 (en) | Bipolar-complementary metal oxide semiconductor circuit | |
GB8531175D0 (en) | Semiconductor | |
GB8614893D0 (en) | Manufacturing wafers | |
GB8512466D0 (en) | Etching copper | |
DE3664487D1 (en) | Metal forming | |
GB2172741B (en) | Semiconductor cathode arrangements | |
GB8604500D0 (en) | Semiconductor | |
GB8528327D0 (en) | Semiconductor cathode | |
GB8620131D0 (en) | Making contacts between metal & semiconductor | |
GB2159330B (en) | Electrical contacts | |
GB8609245D0 (en) | Metal forming | |
GB2168848B (en) | Semiconductor devices | |
GB2168847B (en) | Semiconductor devices | |
GB8619843D0 (en) | Semiconductor | |
GB2157888B (en) | Semiconductor housing | |
GB2166588B (en) | Buried-resistance semiconductor devices | |
GB2171251B (en) | Semiconductor devices |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
PCNP | Patent ceased through non-payment of renewal fee |
Effective date: 20030819 |