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GB2181297B - Process and relative apparatus for making ohmic type contacts between metal and semiconductor - Google Patents

Process and relative apparatus for making ohmic type contacts between metal and semiconductor

Info

Publication number
GB2181297B
GB2181297B GB8620131A GB8620131A GB2181297B GB 2181297 B GB2181297 B GB 2181297B GB 8620131 A GB8620131 A GB 8620131A GB 8620131 A GB8620131 A GB 8620131A GB 2181297 B GB2181297 B GB 2181297B
Authority
GB
Grant status
Grant
Patent type
Prior art keywords
semiconductor
relative
apparatus
metal
making
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB8620131A
Other versions
GB2181297A (en )
GB8620131D0 (en )
Inventor
Giulio Iannuzzi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
SGS Microelettronica SpA
Original Assignee
SGS Microelettronica SpA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Grant date

Links

Classifications

    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3065Plasma etching; Reactive-ion etching
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in H01L21/20 - H01L21/268
    • H01L21/283Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/285Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
    • H01L21/28506Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
    • H01L21/28512Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic System
GB8620131A 1985-10-01 1986-08-19 Process and relative apparatus for making ohmic type contacts between metal and semiconductor Expired GB2181297B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
IT2232585 1985-10-01

Publications (3)

Publication Number Publication Date
GB8620131D0 GB8620131D0 (en) 1986-10-01
GB2181297A true GB2181297A (en) 1987-04-15
GB2181297B true GB2181297B (en) 1989-06-07

Family

ID=11194694

Family Applications (1)

Application Number Title Priority Date Filing Date
GB8620131A Expired GB2181297B (en) 1985-10-01 1986-08-19 Process and relative apparatus for making ohmic type contacts between metal and semiconductor

Country Status (5)

Country Link
JP (1) JPS6286716A (en)
DE (1) DE3633472A1 (en)
FR (1) FR2588120A1 (en)
GB (1) GB2181297B (en)
NL (1) NL8602453A (en)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5043299B1 (en) * 1989-12-01 1997-02-25 Applied Materials Inc Process for selective deposition of tungsten on semiconductor wafer
US5478780A (en) * 1990-03-30 1995-12-26 Siemens Aktiengesellschaft Method and apparatus for producing conductive layers or structures for VLSI circuits
EP0448763A1 (en) * 1990-03-30 1991-10-02 Siemens Aktiengesellschaft Process and apparatus for manufacturing conductive layers or structures for highly integrated circuits
DE69121451D1 (en) * 1990-04-16 1996-09-26 Applied Materials Inc A process for producing a titanium silicide layer on a semiconductor layer
DE4339465C2 (en) * 1993-11-19 1997-05-28 Gold Star Electronics Process for treating the surface of a dry etching exposed silicon substrate

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1177382A (en) * 1966-02-24 1970-01-14 Rca Corp Formerly Known As Rad Method of Making Ohmic Contact to a Semiconductor Body
GB1279229A (en) * 1969-11-03 1972-06-28 Rca Corp Method of metalizing semiconductor devices
GB1410701A (en) * 1972-01-03 1975-10-22 Signetics Corp Schottky barrier diode semiconductor structures
GB1530237A (en) * 1976-05-14 1978-10-25 Data General Corp Method of fabricating metal semiconductor interfaces
EP0057254A2 (en) * 1981-02-03 1982-08-11 Siemens Aktiengesellschaft Method of producing extremely fine features
GB2174542A (en) * 1985-03-29 1986-11-05 Sharp Kk A method and apparatus for the production of semiconductor devices

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4107835A (en) * 1977-02-11 1978-08-22 Bell Telephone Laboratories, Incorporated Fabrication of semiconductive devices
JPS57157525A (en) * 1981-03-23 1982-09-29 Fujitsu Ltd Surface treating method
JPH0343776B2 (en) * 1983-10-04 1991-07-03 Asahi Garasu Kk
US4693777A (en) * 1984-11-30 1987-09-15 Kabushiki Kaisha Toshiba Apparatus for producing semiconductor devices
US4605479A (en) * 1985-06-24 1986-08-12 Rca Corporation In-situ cleaned ohmic contacts

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1177382A (en) * 1966-02-24 1970-01-14 Rca Corp Formerly Known As Rad Method of Making Ohmic Contact to a Semiconductor Body
GB1279229A (en) * 1969-11-03 1972-06-28 Rca Corp Method of metalizing semiconductor devices
GB1410701A (en) * 1972-01-03 1975-10-22 Signetics Corp Schottky barrier diode semiconductor structures
GB1530237A (en) * 1976-05-14 1978-10-25 Data General Corp Method of fabricating metal semiconductor interfaces
EP0057254A2 (en) * 1981-02-03 1982-08-11 Siemens Aktiengesellschaft Method of producing extremely fine features
GB2174542A (en) * 1985-03-29 1986-11-05 Sharp Kk A method and apparatus for the production of semiconductor devices

Also Published As

Publication number Publication date Type
NL8602453A (en) 1987-05-04 application
JPS6286716A (en) 1987-04-21 application
GB2181297A (en) 1987-04-15 application
DE3633472A1 (en) 1987-04-02 application
FR2588120A1 (en) 1987-04-03 application
GB8620131D0 (en) 1986-10-01 grant

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Legal Events

Date Code Title Description
PCNP Patent ceased through non-payment of renewal fee

Effective date: 20030819