IT1147064B - Procedimento per produrre un dispositivo a semiconduttore in uno strato epitassiale simulato - Google Patents

Procedimento per produrre un dispositivo a semiconduttore in uno strato epitassiale simulato

Info

Publication number
IT1147064B
IT1147064B IT49502/80A IT4950280A IT1147064B IT 1147064 B IT1147064 B IT 1147064B IT 49502/80 A IT49502/80 A IT 49502/80A IT 4950280 A IT4950280 A IT 4950280A IT 1147064 B IT1147064 B IT 1147064B
Authority
IT
Italy
Prior art keywords
procedure
producing
semiconductor device
epitaxial layer
simulated epitaxial
Prior art date
Application number
IT49502/80A
Other languages
English (en)
Italian (it)
Other versions
IT8049502A0 (it
Inventor
Jagir S Multani
Jagtar Sandhu
Original Assignee
Gen Instrument Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Gen Instrument Corp filed Critical Gen Instrument Corp
Publication of IT8049502A0 publication Critical patent/IT8049502A0/it
Application granted granted Critical
Publication of IT1147064B publication Critical patent/IT1147064B/it

Links

Classifications

    • H10P32/1406—
    • H10P30/204—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10P30/212—
    • H10P32/171—
IT49502/80A 1979-08-20 1980-08-14 Procedimento per produrre un dispositivo a semiconduttore in uno strato epitassiale simulato IT1147064B (it)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US6768679A 1979-08-20 1979-08-20

Publications (2)

Publication Number Publication Date
IT8049502A0 IT8049502A0 (it) 1980-08-14
IT1147064B true IT1147064B (it) 1986-11-19

Family

ID=22077689

Family Applications (1)

Application Number Title Priority Date Filing Date
IT49502/80A IT1147064B (it) 1979-08-20 1980-08-14 Procedimento per produrre un dispositivo a semiconduttore in uno strato epitassiale simulato

Country Status (6)

Country Link
JP (1) JPS5630766A (index.php)
CA (1) CA1131797A (index.php)
DE (1) DE3027197A1 (index.php)
FR (1) FR2463825A1 (index.php)
GB (1) GB2056765A (index.php)
IT (1) IT1147064B (index.php)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2156383A (en) * 1984-02-06 1985-10-09 Plessey Co Plc Infra-red material structures
JPH02109158U (index.php) * 1989-02-10 1990-08-30
JPH0338044A (ja) * 1989-07-05 1991-02-19 Toshiba Corp 半導体装置の製造方法

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL302630A (index.php) * 1963-01-18 1900-01-01
US3810791A (en) * 1970-08-03 1974-05-14 Texas Instruments Inc Process for the fabrication of semiconductor materials
US3876472A (en) * 1974-04-15 1975-04-08 Rca Corp Method of achieving semiconductor substrates having similar surface resistivity
US3945856A (en) * 1974-07-15 1976-03-23 Ibm Corporation Method of ion implantation through an electrically insulative material
JPS6051275B2 (ja) * 1975-10-30 1985-11-13 ソニー株式会社 半導体装置の製造方法
US4055884A (en) * 1976-12-13 1977-11-01 International Business Machines Corporation Fabrication of power field effect transistors and the resulting structures

Also Published As

Publication number Publication date
DE3027197A1 (de) 1981-03-19
FR2463825B1 (index.php) 1982-12-10
JPS5630766A (en) 1981-03-27
FR2463825A1 (fr) 1981-02-27
GB2056765A (en) 1981-03-18
CA1131797A (en) 1982-09-14
IT8049502A0 (it) 1980-08-14

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Legal Events

Date Code Title Description
TA Fee payment date (situation as of event date), data collected since 19931001

Effective date: 19970827