FR2463825B1 - - Google Patents

Info

Publication number
FR2463825B1
FR2463825B1 FR8013899A FR8013899A FR2463825B1 FR 2463825 B1 FR2463825 B1 FR 2463825B1 FR 8013899 A FR8013899 A FR 8013899A FR 8013899 A FR8013899 A FR 8013899A FR 2463825 B1 FR2463825 B1 FR 2463825B1
Authority
FR
France
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
FR8013899A
Other languages
French (fr)
Other versions
FR2463825A1 (fr
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Arris Technology Inc
Original Assignee
Arris Technology Inc
General Instrument Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Arris Technology Inc, General Instrument Corp filed Critical Arris Technology Inc
Publication of FR2463825A1 publication Critical patent/FR2463825A1/fr
Application granted granted Critical
Publication of FR2463825B1 publication Critical patent/FR2463825B1/fr
Granted legal-status Critical Current

Links

Classifications

    • H10P32/1406—
    • H10P30/204—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10P30/212—
    • H10P32/171—
FR8013899A 1979-08-20 1980-06-23 Procede de fabrication d'un dispositif a semi-conducteur dans une couche epitaxiale simulee Granted FR2463825A1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US6768679A 1979-08-20 1979-08-20

Publications (2)

Publication Number Publication Date
FR2463825A1 FR2463825A1 (fr) 1981-02-27
FR2463825B1 true FR2463825B1 (index.php) 1982-12-10

Family

ID=22077689

Family Applications (1)

Application Number Title Priority Date Filing Date
FR8013899A Granted FR2463825A1 (fr) 1979-08-20 1980-06-23 Procede de fabrication d'un dispositif a semi-conducteur dans une couche epitaxiale simulee

Country Status (6)

Country Link
JP (1) JPS5630766A (index.php)
CA (1) CA1131797A (index.php)
DE (1) DE3027197A1 (index.php)
FR (1) FR2463825A1 (index.php)
GB (1) GB2056765A (index.php)
IT (1) IT1147064B (index.php)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2156383A (en) * 1984-02-06 1985-10-09 Plessey Co Plc Infra-red material structures
JPH02109158U (index.php) * 1989-02-10 1990-08-30
JPH0338044A (ja) * 1989-07-05 1991-02-19 Toshiba Corp 半導体装置の製造方法

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL302630A (index.php) * 1963-01-18 1900-01-01
US3810791A (en) * 1970-08-03 1974-05-14 Texas Instruments Inc Process for the fabrication of semiconductor materials
US3876472A (en) * 1974-04-15 1975-04-08 Rca Corp Method of achieving semiconductor substrates having similar surface resistivity
US3945856A (en) * 1974-07-15 1976-03-23 Ibm Corporation Method of ion implantation through an electrically insulative material
JPS6051275B2 (ja) * 1975-10-30 1985-11-13 ソニー株式会社 半導体装置の製造方法
US4055884A (en) * 1976-12-13 1977-11-01 International Business Machines Corporation Fabrication of power field effect transistors and the resulting structures

Also Published As

Publication number Publication date
DE3027197A1 (de) 1981-03-19
JPS5630766A (en) 1981-03-27
FR2463825A1 (fr) 1981-02-27
GB2056765A (en) 1981-03-18
IT1147064B (it) 1986-11-19
CA1131797A (en) 1982-09-14
IT8049502A0 (it) 1980-08-14

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Legal Events

Date Code Title Description
ST Notification of lapse