CA1131797A - Fabrication of a semiconductor device in a simulated epitaxial layer - Google Patents

Fabrication of a semiconductor device in a simulated epitaxial layer

Info

Publication number
CA1131797A
CA1131797A CA348,272A CA348272A CA1131797A CA 1131797 A CA1131797 A CA 1131797A CA 348272 A CA348272 A CA 348272A CA 1131797 A CA1131797 A CA 1131797A
Authority
CA
Canada
Prior art keywords
epitaxial layer
semiconductor body
simulated
simulated epitaxial
implanted
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
CA348,272A
Other languages
English (en)
French (fr)
Inventor
Jagir S. Multani
Jagtar S. Sandhu
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Arris Technology Inc
Original Assignee
General Instrument Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by General Instrument Corp filed Critical General Instrument Corp
Application granted granted Critical
Publication of CA1131797A publication Critical patent/CA1131797A/en
Expired legal-status Critical Current

Links

Classifications

    • H10P32/1406—
    • H10P30/204—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10P30/212—
    • H10P32/171—
CA348,272A 1979-08-20 1980-03-24 Fabrication of a semiconductor device in a simulated epitaxial layer Expired CA1131797A (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US6768679A 1979-08-20 1979-08-20
US67,686 1979-08-20

Publications (1)

Publication Number Publication Date
CA1131797A true CA1131797A (en) 1982-09-14

Family

ID=22077689

Family Applications (1)

Application Number Title Priority Date Filing Date
CA348,272A Expired CA1131797A (en) 1979-08-20 1980-03-24 Fabrication of a semiconductor device in a simulated epitaxial layer

Country Status (6)

Country Link
JP (1) JPS5630766A (index.php)
CA (1) CA1131797A (index.php)
DE (1) DE3027197A1 (index.php)
FR (1) FR2463825A1 (index.php)
GB (1) GB2056765A (index.php)
IT (1) IT1147064B (index.php)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2156383A (en) * 1984-02-06 1985-10-09 Plessey Co Plc Infra-red material structures
JPH02109158U (index.php) * 1989-02-10 1990-08-30
JPH0338044A (ja) * 1989-07-05 1991-02-19 Toshiba Corp 半導体装置の製造方法

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL302630A (index.php) * 1963-01-18 1900-01-01
US3810791A (en) * 1970-08-03 1974-05-14 Texas Instruments Inc Process for the fabrication of semiconductor materials
US3876472A (en) * 1974-04-15 1975-04-08 Rca Corp Method of achieving semiconductor substrates having similar surface resistivity
US3945856A (en) * 1974-07-15 1976-03-23 Ibm Corporation Method of ion implantation through an electrically insulative material
JPS6051275B2 (ja) * 1975-10-30 1985-11-13 ソニー株式会社 半導体装置の製造方法
US4055884A (en) * 1976-12-13 1977-11-01 International Business Machines Corporation Fabrication of power field effect transistors and the resulting structures

Also Published As

Publication number Publication date
DE3027197A1 (de) 1981-03-19
FR2463825B1 (index.php) 1982-12-10
JPS5630766A (en) 1981-03-27
FR2463825A1 (fr) 1981-02-27
GB2056765A (en) 1981-03-18
IT1147064B (it) 1986-11-19
IT8049502A0 (it) 1980-08-14

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Legal Events

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