GB2009497B - Method for manufacturing a semiconductor device - Google Patents

Method for manufacturing a semiconductor device

Info

Publication number
GB2009497B
GB2009497B GB7842009A GB7842009A GB2009497B GB 2009497 B GB2009497 B GB 2009497B GB 7842009 A GB7842009 A GB 7842009A GB 7842009 A GB7842009 A GB 7842009A GB 2009497 B GB2009497 B GB 2009497B
Authority
GB
United Kingdom
Prior art keywords
manufacturing
semiconductor device
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB7842009A
Other versions
GB2009497A (en
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP12756677A external-priority patent/JPS5461489A/en
Priority claimed from JP13409677A external-priority patent/JPS5467778A/en
Application filed by Tokyo Shibaura Electric Co Ltd filed Critical Tokyo Shibaura Electric Co Ltd
Publication of GB2009497A publication Critical patent/GB2009497A/en
Application granted granted Critical
Publication of GB2009497B publication Critical patent/GB2009497B/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/3215—Doping the layers
    • H01L21/32155—Doping polycristalline - or amorphous silicon layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
    • H01L21/225—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a solid phase, e.g. a doped oxide layer
    • H01L21/2251—Diffusion into or out of group IV semiconductors
    • H01L21/2254—Diffusion into or out of group IV semiconductors from or through or into an applied layer, e.g. photoresist, nitrides
    • H01L21/2257—Diffusion into or out of group IV semiconductors from or through or into an applied layer, e.g. photoresist, nitrides the applied layer being silicon or silicide or SIPOS, e.g. polysilicon, porous silicon
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
    • H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
    • H01L21/28512—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table
    • H01L21/28525—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table the conductive layers comprising semiconducting material

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Bipolar Transistors (AREA)
GB7842009A 1977-10-26 1978-10-26 Method for manufacturing a semiconductor device Expired GB2009497B (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP12756677A JPS5461489A (en) 1977-10-26 1977-10-26 Manufacture for semiconductor device
JP13409677A JPS5467778A (en) 1977-11-10 1977-11-10 Production of semiconductor device

Publications (2)

Publication Number Publication Date
GB2009497A GB2009497A (en) 1979-06-13
GB2009497B true GB2009497B (en) 1982-06-30

Family

ID=26463497

Family Applications (1)

Application Number Title Priority Date Filing Date
GB7842009A Expired GB2009497B (en) 1977-10-26 1978-10-26 Method for manufacturing a semiconductor device

Country Status (2)

Country Link
DE (2) DE2857837C2 (en)
GB (1) GB2009497B (en)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4234357A (en) * 1979-07-16 1980-11-18 Trw Inc. Process for manufacturing emitters by diffusion from polysilicon
US4263066A (en) * 1980-06-09 1981-04-21 Varian Associates, Inc. Process for concurrent formation of base diffusion and p+ profile from single source predeposition

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE966906C (en) * 1953-04-09 1957-09-19 Siemens Ag Method for non-blocking contacting of surface rectifiers or transistors with a semiconductor single crystal having a p-n layer
NO123436B (en) * 1967-11-14 1971-11-15 Sony Corp
JPS4926747B1 (en) * 1970-10-09 1974-07-11
FR2270677B1 (en) * 1974-02-20 1978-12-01 Silec Semi Conducteurs

Also Published As

Publication number Publication date
GB2009497A (en) 1979-06-13
DE2846671A1 (en) 1979-05-03
DE2857837C2 (en) 1983-07-14
DE2846671C2 (en) 1982-09-09

Similar Documents

Publication Publication Date Title
US4352724B1 (en) Method of manufacturing a semiconductor device
DE3168688D1 (en) Method for manufacturing a semiconductor device
DE2861528D1 (en) Method for making self-aligned integrated semiconductor devices
ATA386377A (en) Device for manufacturing shingles
IE811040L (en) Manufacturing a semiconductor device
GB2011711B (en) Process for producing a semiconductor device
GB1548520A (en) Method of manufacturing a semiconductor device
DE3071446D1 (en) Process for producing a semiconductor device
AU499549B2 (en) Method for fabricating a semiconductor device
GB2010580B (en) Method for manufacturing a semiconductor device
DE2861353D1 (en) Method of manufacturing a locos semiconductor device
DE3068419D1 (en) Process for producing an electrode on a semiconductor device
DE3063768D1 (en) A method of manufacturing a semiconductor device
US4553314B1 (en) Method for making a semiconductor device
DE3071906D1 (en) A method of manufacturing a semiconductor device
DE3063191D1 (en) Method for manufacturing a semiconductor integrated circuit
DE2861606D1 (en) Process for manufacturing a semiconductor device
GB2000372B (en) Method of manufacturing a semiconductor device
DE2961365D1 (en) Method of manufacturing a semiconductor device
DE3067007D1 (en) Method of manufacturing a semiconductor device
JPS5543900A (en) Apparatus for manufacturing semiconductor device
DE3174752D1 (en) Method for manufacturing a semiconductor device
DE3063971D1 (en) A method of manufacturing a semiconductor device
JPS5397375A (en) Device for producing semiconductor
IT1089298B (en) PROCEDURE FOR MANUFACTURING A SEMICONDUCTIVE DEVICE

Legal Events

Date Code Title Description
746 Register noted 'licences of right' (sect. 46/1977)
PCNP Patent ceased through non-payment of renewal fee

Effective date: 19951026