GB2009497A - A method for manufacturing a semiconductor device - Google Patents

A method for manufacturing a semiconductor device

Info

Publication number
GB2009497A
GB2009497A GB7842009A GB7842009A GB2009497A GB 2009497 A GB2009497 A GB 2009497A GB 7842009 A GB7842009 A GB 7842009A GB 7842009 A GB7842009 A GB 7842009A GB 2009497 A GB2009497 A GB 2009497A
Authority
GB
United Kingdom
Prior art keywords
type region
phosphorus
manufacturing
layer
shallow
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
GB7842009A
Other versions
GB2009497B (en
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP12756677A external-priority patent/JPS5461489A/en
Priority claimed from JP13409677A external-priority patent/JPS5467778A/en
Application filed by Tokyo Shibaura Electric Co Ltd filed Critical Tokyo Shibaura Electric Co Ltd
Publication of GB2009497A publication Critical patent/GB2009497A/en
Application granted granted Critical
Publication of GB2009497B publication Critical patent/GB2009497B/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/3215—Doping the layers
    • H01L21/32155—Doping polycristalline - or amorphous silicon layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
    • H01L21/225—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a solid phase, e.g. a doped oxide layer
    • H01L21/2251—Diffusion into or out of group IV semiconductors
    • H01L21/2254—Diffusion into or out of group IV semiconductors from or through or into an applied layer, e.g. photoresist, nitrides
    • H01L21/2257—Diffusion into or out of group IV semiconductors from or through or into an applied layer, e.g. photoresist, nitrides the applied layer being silicon or silicide or SIPOS, e.g. polysilicon, porous silicon
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
    • H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
    • H01L21/28512—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table
    • H01L21/28525—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table the conductive layers comprising semiconducting material

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Bipolar Transistors (AREA)

Abstract

A method for manufacturing a device such as an npn-type transistor includes steps of depositing or implanting phosphorus on or in a p-type region (11) to form a shallow n-type region, covering the deposited phosphorus with a poly-crystalline silicon layer (18) and heating the deposited phosphorus to diffuse it into the p-type region (11) to form an n-type region (17). Because phosphorus diffuses more readily into polycrystalline silicon than into mono-crystalline silicon the presence of the poly-crystalline layer (18) causes the diffused n-type region (17) to be shallow than if the layer (18) were absent. Various application of this effect are described. <IMAGE>
GB7842009A 1977-10-26 1978-10-26 Method for manufacturing a semiconductor device Expired GB2009497B (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP12756677A JPS5461489A (en) 1977-10-26 1977-10-26 Manufacture for semiconductor device
JP13409677A JPS5467778A (en) 1977-11-10 1977-11-10 Production of semiconductor device

Publications (2)

Publication Number Publication Date
GB2009497A true GB2009497A (en) 1979-06-13
GB2009497B GB2009497B (en) 1982-06-30

Family

ID=26463497

Family Applications (1)

Application Number Title Priority Date Filing Date
GB7842009A Expired GB2009497B (en) 1977-10-26 1978-10-26 Method for manufacturing a semiconductor device

Country Status (2)

Country Link
DE (2) DE2857837C2 (en)
GB (1) GB2009497B (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2462023A1 (en) * 1979-07-16 1981-02-06 Trw Inc METHOD FOR MANUFACTURING A SEMICONDUCTOR DEVICE
EP0041786A1 (en) * 1980-06-09 1981-12-16 Varian Associates, Inc. Process for concurrent formation of base diffusion and p+ profile from single source predeposition

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE966906C (en) * 1953-04-09 1957-09-19 Siemens Ag Method for non-blocking contacting of surface rectifiers or transistors with a semiconductor single crystal having a p-n layer
NO123436B (en) * 1967-11-14 1971-11-15 Sony Corp
JPS4926747B1 (en) * 1970-10-09 1974-07-11
FR2270677B1 (en) * 1974-02-20 1978-12-01 Silec Semi Conducteurs

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2462023A1 (en) * 1979-07-16 1981-02-06 Trw Inc METHOD FOR MANUFACTURING A SEMICONDUCTOR DEVICE
EP0041786A1 (en) * 1980-06-09 1981-12-16 Varian Associates, Inc. Process for concurrent formation of base diffusion and p+ profile from single source predeposition

Also Published As

Publication number Publication date
GB2009497B (en) 1982-06-30
DE2846671A1 (en) 1979-05-03
DE2857837C2 (en) 1983-07-14
DE2846671C2 (en) 1982-09-09

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Legal Events

Date Code Title Description
746 Register noted 'licences of right' (sect. 46/1977)
PCNP Patent ceased through non-payment of renewal fee

Effective date: 19951026