IT1043400B - Procedimento per fobmare una zona drogata di un tipo di conduzione in un corpo di materiale semicon duttore nonche transistore fabbricato secondo tale procedimento - Google Patents
Procedimento per fobmare una zona drogata di un tipo di conduzione in un corpo di materiale semicon duttore nonche transistore fabbricato secondo tale procedimentoInfo
- Publication number
- IT1043400B IT1043400B IT28325/75A IT2832575A IT1043400B IT 1043400 B IT1043400 B IT 1043400B IT 28325/75 A IT28325/75 A IT 28325/75A IT 2832575 A IT2832575 A IT 2832575A IT 1043400 B IT1043400 B IT 1043400B
- Authority
- IT
- Italy
- Prior art keywords
- procedure
- fobmate
- droged
- conduct
- zone
- Prior art date
Links
- 239000000463 material Substances 0.000 title 1
- 239000004065 semiconductor Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/0804—Emitter regions of bipolar transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
- H01L21/225—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a solid phase, e.g. a doped oxide layer
- H01L21/2251—Diffusion into or out of group IV semiconductors
- H01L21/2254—Diffusion into or out of group IV semiconductors from or through or into an applied layer, e.g. photoresist, nitrides
- H01L21/2257—Diffusion into or out of group IV semiconductors from or through or into an applied layer, e.g. photoresist, nitrides the applied layer being silicon or silicide or SIPOS, e.g. polysilicon, porous silicon
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/36—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the concentration or distribution of impurities in the bulk material
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/024—Defect control-gettering and annealing
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/122—Polycrystalline
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/124—Polycrystalline emitter
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Bipolar Transistors (AREA)
- Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
- Electrodes Of Semiconductors (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE2449688A DE2449688C3 (de) | 1974-10-18 | 1974-10-18 | Verfahren zur Herstellung einer dotierten Zone eines Leitfähigkeitstyps in einem Halbleiterkörper |
Publications (1)
Publication Number | Publication Date |
---|---|
IT1043400B true IT1043400B (it) | 1980-02-20 |
Family
ID=5928640
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
IT28325/75A IT1043400B (it) | 1974-10-18 | 1975-10-16 | Procedimento per fobmare una zona drogata di un tipo di conduzione in un corpo di materiale semicon duttore nonche transistore fabbricato secondo tale procedimento |
Country Status (7)
Country | Link |
---|---|
US (1) | US4063967A (it) |
JP (1) | JPS5952533B2 (it) |
CA (1) | CA1055620A (it) |
DE (1) | DE2449688C3 (it) |
FR (1) | FR2288391A1 (it) |
GB (1) | GB1464801A (it) |
IT (1) | IT1043400B (it) |
Families Citing this family (53)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5290273A (en) * | 1976-01-23 | 1977-07-29 | Hitachi Ltd | Semiconductor device |
NL7604445A (nl) * | 1976-04-27 | 1977-10-31 | Philips Nv | Werkwijze ter vervaardiging van een halfgelei- derinrichting, en inrichting vervaardigd door toepassing van de werkwijze. |
DE2627855A1 (de) * | 1976-06-22 | 1977-12-29 | Siemens Ag | Halbleiterbauelement mit wenigstens zwei, einen pn-uebergang bildenden zonen unterschiedlichen leitungstyps sowie verfahren zu dessen herstellung |
NL7710635A (nl) * | 1977-09-29 | 1979-04-02 | Philips Nv | Werkwijze voor het vervaardigen van een halfgeleiderinrichting. |
JPS5467778A (en) * | 1977-11-10 | 1979-05-31 | Toshiba Corp | Production of semiconductor device |
US4190466A (en) * | 1977-12-22 | 1980-02-26 | International Business Machines Corporation | Method for making a bipolar transistor structure utilizing self-passivating diffusion sources |
US4118250A (en) * | 1977-12-30 | 1978-10-03 | International Business Machines Corporation | Process for producing integrated circuit devices by ion implantation |
US4155779A (en) * | 1978-08-21 | 1979-05-22 | Bell Telephone Laboratories, Incorporated | Control techniques for annealing semiconductors |
US4214918A (en) * | 1978-10-12 | 1980-07-29 | Stanford University | Method of forming polycrystalline semiconductor interconnections, resistors and contacts by applying radiation beam |
US4274892A (en) * | 1978-12-14 | 1981-06-23 | Trw Inc. | Dopant diffusion method of making semiconductor products |
JPS5586151A (en) * | 1978-12-23 | 1980-06-28 | Chiyou Lsi Gijutsu Kenkyu Kumiai | Manufacture of semiconductor integrated circuit |
JPS55138877A (en) * | 1979-04-17 | 1980-10-30 | Seiko Instr & Electronics Ltd | Method of fabricating semiconductor device |
JPS5826829B2 (ja) * | 1979-08-30 | 1983-06-06 | 富士通株式会社 | ダイナミックメモリセルの製造方法 |
JPS5638815A (en) * | 1979-09-07 | 1981-04-14 | Chiyou Lsi Gijutsu Kenkyu Kumiai | Manufacture of semiconductor device |
US4452645A (en) * | 1979-11-13 | 1984-06-05 | International Business Machines Corporation | Method of making emitter regions by implantation through a non-monocrystalline layer |
US4534806A (en) * | 1979-12-03 | 1985-08-13 | International Business Machines Corporation | Method for manufacturing vertical PNP transistor with shallow emitter |
DE3064143D1 (en) * | 1979-12-03 | 1983-08-18 | Ibm | Process for producing a vertical pnp transistor and transistor so produced |
US4389255A (en) * | 1980-01-14 | 1983-06-21 | Burroughs Corporation | Method of forming buried collector for bipolar transistor in a semiconductor by selective implantation of poly-si followed by oxidation and etch-off |
US4485552A (en) * | 1980-01-18 | 1984-12-04 | International Business Machines Corporation | Complementary transistor structure and method for manufacture |
US4301588A (en) * | 1980-02-01 | 1981-11-24 | International Business Machines Corporation | Consumable amorphous or polysilicon emitter process |
US4339285A (en) * | 1980-07-28 | 1982-07-13 | Rca Corporation | Method for fabricating adjacent conducting and insulating regions in a film by laser irradiation |
US4803528A (en) * | 1980-07-28 | 1989-02-07 | General Electric Company | Insulating film having electrically conducting portions |
US4411708A (en) * | 1980-08-25 | 1983-10-25 | Trw Inc. | Method of making precision doped polysilicon vertical ballast resistors by multiple implantations |
JPS5766674A (en) * | 1980-10-09 | 1982-04-22 | Toshiba Corp | Semiconductor device |
JPS5931556Y2 (ja) * | 1980-11-28 | 1984-09-06 | 功 田中 | 農作物の収納用網袋 |
JPS5793525A (en) * | 1980-12-03 | 1982-06-10 | Nec Corp | Manufacture of semiconductor device |
US4391651A (en) * | 1981-10-15 | 1983-07-05 | The United States Of America As Represented By The Secretary Of The Navy | Method of forming a hyperabrupt interface in a GaAs substrate |
JPS58122724A (ja) * | 1982-01-18 | 1983-07-21 | Toshiba Corp | 半導体素子の製造方法 |
EP0101737A4 (en) * | 1982-02-26 | 1984-08-20 | Western Electric Co | DIFFUSION OF LOW REGIONS. |
US4472212A (en) * | 1982-02-26 | 1984-09-18 | At&T Bell Laboratories | Method for fabricating a semiconductor device |
JPS58188157A (ja) * | 1982-04-28 | 1983-11-02 | Toshiba Corp | 半導体装置およびその製造方法 |
CA1198226A (en) * | 1982-06-01 | 1985-12-17 | Eliezer Kinsbron | Method for manufacturing a semiconductor device |
US4471524A (en) * | 1982-06-01 | 1984-09-18 | At&T Bell Laboratories | Method for manufacturing an insulated gate field effect transistor device |
US4888297A (en) * | 1982-09-20 | 1989-12-19 | International Business Machines Corporation | Process for making a contact structure including polysilicon and metal alloys |
GB2130793B (en) * | 1982-11-22 | 1986-09-03 | Gen Electric Co Plc | Forming a doped region in a semiconductor body |
JPS59113619A (ja) * | 1982-12-20 | 1984-06-30 | Matsushita Electronics Corp | 半導体装置の製造方法 |
JPS59186367A (ja) * | 1983-04-06 | 1984-10-23 | Matsushita Electric Ind Co Ltd | 半導体装置の製造方法 |
JPS6068611A (ja) * | 1983-09-26 | 1985-04-19 | Matsushita Electric Ind Co Ltd | 半導体装置の製造方法 |
US4569701A (en) * | 1984-04-05 | 1986-02-11 | At&T Bell Laboratories | Technique for doping from a polysilicon transfer layer |
US4694561A (en) * | 1984-11-30 | 1987-09-22 | American Telephone And Telegraph Company, At&T Bell Laboratories | Method of making high-performance trench capacitors for DRAM cells |
US4898838A (en) * | 1985-10-16 | 1990-02-06 | Texas Instruments Incorporated | Method for fabricating a poly emitter logic array |
JPS6293929A (ja) * | 1985-10-21 | 1987-04-30 | Toshiba Corp | 半導体装置の製造方法 |
JPS62208638A (ja) * | 1986-03-07 | 1987-09-12 | Toshiba Corp | 半導体装置の製造方法 |
JP2695185B2 (ja) * | 1988-05-02 | 1997-12-24 | 株式会社日立製作所 | 半導体集積回路装置及びその製造方法 |
JP2508818B2 (ja) * | 1988-10-03 | 1996-06-19 | 三菱電機株式会社 | 半導体装置の製造方法 |
JPH0744275B2 (ja) * | 1988-10-06 | 1995-05-15 | 日本電気株式会社 | 高耐圧mos型半導体装置の製造方法 |
US5028973A (en) * | 1989-06-19 | 1991-07-02 | Harris Corporation | Bipolar transistor with high efficient emitter |
US5188978A (en) * | 1990-03-02 | 1993-02-23 | International Business Machines Corporation | Controlled silicon doping of III-V compounds by thermal oxidation of silicon capping layer |
US5296388A (en) * | 1990-07-13 | 1994-03-22 | Matsushita Electric Industrial Co., Ltd. | Fabrication method for semiconductor devices |
JPH04199507A (ja) * | 1990-11-28 | 1992-07-20 | Mitsubishi Electric Corp | 3―V族化合物半導体へのn型不純物固相拡散方法 |
DE59409300D1 (de) * | 1993-06-23 | 2000-05-31 | Siemens Ag | Verfahren zur Herstellung von einem Isolationsgraben in einem Substrat für Smart-Power-Technologien |
JPH07142419A (ja) * | 1993-11-15 | 1995-06-02 | Toshiba Corp | 半導体装置の製造方法 |
US6451644B1 (en) * | 1998-11-06 | 2002-09-17 | Advanced Micro Devices, Inc. | Method of providing a gate conductor with high dopant activation |
Family Cites Families (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3460007A (en) * | 1967-07-03 | 1969-08-05 | Rca Corp | Semiconductor junction device |
US3558374A (en) * | 1968-01-15 | 1971-01-26 | Ibm | Polycrystalline film having controlled grain size and method of making same |
JPS4826179B1 (it) * | 1968-09-30 | 1973-08-07 | ||
US3548233A (en) * | 1968-11-29 | 1970-12-15 | Rca Corp | Charge storage device with pn junction diode array target having semiconductor contact pads |
US3717507A (en) * | 1969-06-19 | 1973-02-20 | Shibaura Electric Co Ltd | Method of manufacturing semiconductor devices utilizing ion-implantation and arsenic diffusion |
US3664896A (en) * | 1969-07-28 | 1972-05-23 | David M Duncan | Deposited silicon diffusion sources |
US3764413A (en) * | 1970-11-25 | 1973-10-09 | Nippon Electric Co | Method of producing insulated gate field effect transistors |
US3775191A (en) * | 1971-06-28 | 1973-11-27 | Bell Canada Northern Electric | Modification of channel regions in insulated gate field effect transistors |
JPS5217747B2 (it) * | 1971-08-09 | 1977-05-17 | ||
JPS4855663A (it) * | 1971-11-10 | 1973-08-04 | ||
JPS499186A (it) * | 1972-05-11 | 1974-01-26 | ||
US3928095A (en) * | 1972-11-08 | 1975-12-23 | Suwa Seikosha Kk | Semiconductor device and process for manufacturing same |
-
1974
- 1974-10-18 DE DE2449688A patent/DE2449688C3/de not_active Expired
-
1975
- 1975-08-22 GB GB3486775A patent/GB1464801A/en not_active Expired
- 1975-09-30 CA CA236,668A patent/CA1055620A/en not_active Expired
- 1975-10-09 US US05/621,071 patent/US4063967A/en not_active Expired - Lifetime
- 1975-10-14 FR FR7531393A patent/FR2288391A1/fr active Granted
- 1975-10-16 IT IT28325/75A patent/IT1043400B/it active
- 1975-10-17 JP JP50125207A patent/JPS5952533B2/ja not_active Expired
Also Published As
Publication number | Publication date |
---|---|
US4063967A (en) | 1977-12-20 |
DE2449688C3 (de) | 1980-07-10 |
JPS5952533B2 (ja) | 1984-12-20 |
JPS5165561A (it) | 1976-06-07 |
FR2288391A1 (fr) | 1976-05-14 |
FR2288391B1 (it) | 1982-10-01 |
DE2449688A1 (de) | 1976-04-22 |
DE2449688B2 (de) | 1979-10-04 |
CA1055620A (en) | 1979-05-29 |
GB1464801A (en) | 1977-02-16 |
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