IT948817B - Procedimento per la diffusione di un impurezza in un corpo semicon duttore - Google Patents
Procedimento per la diffusione di un impurezza in un corpo semicon duttoreInfo
- Publication number
 - IT948817B IT948817B IT67054/72A IT6705472A IT948817B IT 948817 B IT948817 B IT 948817B IT 67054/72 A IT67054/72 A IT 67054/72A IT 6705472 A IT6705472 A IT 6705472A IT 948817 B IT948817 B IT 948817B
 - Authority
 - IT
 - Italy
 - Prior art keywords
 - impurity
 - diffusion
 - procedure
 - semicon ductor
 - ductor body
 - Prior art date
 
Links
- 238000009792 diffusion process Methods 0.000 title 1
 - 239000012535 impurity Substances 0.000 title 1
 - 238000000034 method Methods 0.000 title 1
 - 239000004065 semiconductor Substances 0.000 title 1
 
Classifications
- 
        
- C—CHEMISTRY; METALLURGY
 - C30—CRYSTAL GROWTH
 - C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
 - C30B31/00—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor
 - C30B31/06—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor by contacting with diffusion material in the gaseous state
 - C30B31/10—Reaction chambers; Selection of materials therefor
 
 - 
        
- H—ELECTRICITY
 - H01—ELECTRIC ELEMENTS
 - H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
 - H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
 
 - 
        
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
 - Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
 - Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
 - Y10S252/00—Compositions
 - Y10S252/95—Doping agent source material
 - Y10S252/951—Doping agent source material for vapor transport
 
 
Landscapes
- Engineering & Computer Science (AREA)
 - Chemical & Material Sciences (AREA)
 - Physics & Mathematics (AREA)
 - Materials Engineering (AREA)
 - Metallurgy (AREA)
 - Organic Chemistry (AREA)
 - Crystallography & Structural Chemistry (AREA)
 - Condensed Matter Physics & Semiconductors (AREA)
 - General Physics & Mathematics (AREA)
 - Manufacturing & Machinery (AREA)
 - Computer Hardware Design (AREA)
 - Microelectronics & Electronic Packaging (AREA)
 - Power Engineering (AREA)
 - Crystals, And After-Treatments Of Crystals (AREA)
 
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title | 
|---|---|---|---|
| GB119371 | 1971-01-11 | 
Publications (1)
| Publication Number | Publication Date | 
|---|---|
| IT948817B true IT948817B (it) | 1973-06-11 | 
Family
ID=9717791
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date | 
|---|---|---|---|
| IT67054/72A IT948817B (it) | 1971-01-11 | 1972-01-08 | Procedimento per la diffusione di un impurezza in un corpo semicon duttore | 
Country Status (5)
| Country | Link | 
|---|---|
| US (1) | US3755017A (it) | 
| DE (1) | DE2200623A1 (it) | 
| FR (1) | FR2121734B1 (it) | 
| GB (1) | GB1332994A (it) | 
| IT (1) | IT948817B (it) | 
Families Citing this family (7)
| Publication number | Priority date | Publication date | Assignee | Title | 
|---|---|---|---|---|
| JPS49108969A (it) * | 1973-02-07 | 1974-10-16 | ||
| JPS49114355A (it) * | 1973-02-28 | 1974-10-31 | ||
| US4129090A (en) * | 1973-02-28 | 1978-12-12 | Hitachi, Ltd. | Apparatus for diffusion into semiconductor wafers | 
| JPS5325634B2 (it) * | 1973-04-04 | 1978-07-27 | ||
| CA1244969A (en) * | 1986-10-29 | 1988-11-15 | Mitel Corporation | Method for diffusing p-type material using boron disks | 
| JPH0793277B2 (ja) * | 1989-02-28 | 1995-10-09 | インダストリアル・テクノロジー・リサーチ・インステイテユート | InP基板中へのCd拡散方法 | 
| US5033035A (en) * | 1989-09-27 | 1991-07-16 | Mondaine Watch Ltd. | Watertight watch | 
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title | 
|---|---|---|---|---|
| NL274819A (it) * | 1961-02-20 | 1900-01-01 | ||
| US3215571A (en) * | 1962-10-01 | 1965-11-02 | Bell Telephone Labor Inc | Fabrication of semiconductor bodies | 
| US3649388A (en) * | 1968-11-04 | 1972-03-14 | Ibm | Method for making a semiconductor device having a shallow flat front diffusion layer | 
| US3615944A (en) * | 1968-12-13 | 1971-10-26 | Corning Glass Works | Method for the continuous doping of semiconductor materials | 
| JPS4915903B1 (it) * | 1969-08-18 | 1974-04-18 | 
- 
        1971
        
- 1971-01-11 GB GB119371A patent/GB1332994A/en not_active Expired
 
 - 
        1972
        
- 1972-01-07 DE DE19722200623 patent/DE2200623A1/de active Pending
 - 1972-01-08 IT IT67054/72A patent/IT948817B/it active
 - 1972-01-10 US US00216430A patent/US3755017A/en not_active Expired - Lifetime
 - 1972-01-11 FR FR7200756A patent/FR2121734B1/fr not_active Expired
 
 
Also Published As
| Publication number | Publication date | 
|---|---|
| GB1332994A (en) | 1973-10-10 | 
| FR2121734B1 (it) | 1976-07-23 | 
| US3755017A (en) | 1973-08-28 | 
| FR2121734A1 (it) | 1972-08-25 | 
| DE2200623A1 (de) | 1972-07-27 | 
Similar Documents
| Publication | Publication Date | Title | 
|---|---|---|
| YU36420B (en) | Semiconductor device | |
| JPS52144984A (en) | Semiconductor device | |
| IT950802B (it) | Metodo per la formazione di un contatto intermetallico in un dispositivo semiconduttore | |
| JPS55160466A (en) | Semiconductor device | |
| GB1343174A (en) | Semiconductor devices | |
| MY7400218A (en) | Semiconductor device fabrication | |
| GB1345818A (en) | Semiconductor devices | |
| HK59376A (en) | Semiconductor integrated device | |
| JPS53111284A (en) | Charge coupled semiconductor | |
| IT1004927B (it) | Procedimento per la diffusione del le impurezze in un semiconduttore | |
| IT948817B (it) | Procedimento per la diffusione di un impurezza in un corpo semicon duttore | |
| AU4397372A (en) | Semiconductor device | |
| IT969456B (it) | Complessi rettificaturi a semicon duttori | |
| JPS568880A (en) | Semiconductor device | |
| ZA721782B (en) | Monolithic semiconductor device | |
| PH12247A (en) | Pharmaceutically active compounds | |
| AU459526B2 (en) | Integrated semiconductor structure | |
| GB1349276A (en) | Semiconductor device | |
| GB1345231A (en) | Semiconductor doping | |
| IT972713B (it) | Dsipositivo per la protezione di un dispositivo semiconduttore bilotabile | |
| GB1395238A (en) | Semiconductor devices | |
| CA970073A (en) | Semiconductor wafer | |
| IT975901B (it) | Corpo semiconduttore | |
| HK58776A (en) | Semiconductor devices | |
| IE35247L (en) | Passivated semiconductor device |