IT1043400B - Procedimento per fobmare una zona drogata di un tipo di conduzione in un corpo di materiale semicon duttore nonche transistore fabbricato secondo tale procedimento - Google Patents

Procedimento per fobmare una zona drogata di un tipo di conduzione in un corpo di materiale semicon duttore nonche transistore fabbricato secondo tale procedimento

Info

Publication number
IT1043400B
IT1043400B IT28325/75A IT2832575A IT1043400B IT 1043400 B IT1043400 B IT 1043400B IT 28325/75 A IT28325/75 A IT 28325/75A IT 2832575 A IT2832575 A IT 2832575A IT 1043400 B IT1043400 B IT 1043400B
Authority
IT
Italy
Prior art keywords
procedure
fobmate
droged
conduct
zone
Prior art date
Application number
IT28325/75A
Other languages
English (en)
Italian (it)
Original Assignee
Siemens Ag
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens Ag filed Critical Siemens Ag
Application granted granted Critical
Publication of IT1043400B publication Critical patent/IT1043400B/it

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/13—Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
    • H10D62/133—Emitter regions of BJTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/60—Impurity distributions or concentrations
    • H10P32/1414—
    • H10P32/171—
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/024—Defect control-gettering and annealing
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/122—Polycrystalline
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/124—Polycrystalline emitter
IT28325/75A 1974-10-18 1975-10-16 Procedimento per fobmare una zona drogata di un tipo di conduzione in un corpo di materiale semicon duttore nonche transistore fabbricato secondo tale procedimento IT1043400B (it)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE2449688A DE2449688C3 (de) 1974-10-18 1974-10-18 Verfahren zur Herstellung einer dotierten Zone eines Leitfähigkeitstyps in einem Halbleiterkörper

Publications (1)

Publication Number Publication Date
IT1043400B true IT1043400B (it) 1980-02-20

Family

ID=5928640

Family Applications (1)

Application Number Title Priority Date Filing Date
IT28325/75A IT1043400B (it) 1974-10-18 1975-10-16 Procedimento per fobmare una zona drogata di un tipo di conduzione in un corpo di materiale semicon duttore nonche transistore fabbricato secondo tale procedimento

Country Status (7)

Country Link
US (1) US4063967A (cg-RX-API-DMAC10.html)
JP (1) JPS5952533B2 (cg-RX-API-DMAC10.html)
CA (1) CA1055620A (cg-RX-API-DMAC10.html)
DE (1) DE2449688C3 (cg-RX-API-DMAC10.html)
FR (1) FR2288391A1 (cg-RX-API-DMAC10.html)
GB (1) GB1464801A (cg-RX-API-DMAC10.html)
IT (1) IT1043400B (cg-RX-API-DMAC10.html)

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JPS5766674A (en) * 1980-10-09 1982-04-22 Toshiba Corp Semiconductor device
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US4391651A (en) * 1981-10-15 1983-07-05 The United States Of America As Represented By The Secretary Of The Navy Method of forming a hyperabrupt interface in a GaAs substrate
JPS58122724A (ja) * 1982-01-18 1983-07-21 Toshiba Corp 半導体素子の製造方法
EP0101737A4 (en) * 1982-02-26 1984-08-20 Western Electric Co DIFFUSION OF SHALLOW DEEP REGIONS.
US4472212A (en) * 1982-02-26 1984-09-18 At&T Bell Laboratories Method for fabricating a semiconductor device
JPS58188157A (ja) * 1982-04-28 1983-11-02 Toshiba Corp 半導体装置およびその製造方法
US4437897A (en) 1982-05-18 1984-03-20 International Business Machines Corporation Fabrication process for a shallow emitter/base transistor using same polycrystalline layer
US4471524A (en) * 1982-06-01 1984-09-18 At&T Bell Laboratories Method for manufacturing an insulated gate field effect transistor device
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US4888297A (en) * 1982-09-20 1989-12-19 International Business Machines Corporation Process for making a contact structure including polysilicon and metal alloys
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US4569701A (en) * 1984-04-05 1986-02-11 At&T Bell Laboratories Technique for doping from a polysilicon transfer layer
US4694561A (en) * 1984-11-30 1987-09-22 American Telephone And Telegraph Company, At&T Bell Laboratories Method of making high-performance trench capacitors for DRAM cells
US4898838A (en) * 1985-10-16 1990-02-06 Texas Instruments Incorporated Method for fabricating a poly emitter logic array
JPS6293929A (ja) * 1985-10-21 1987-04-30 Toshiba Corp 半導体装置の製造方法
JPS62208638A (ja) * 1986-03-07 1987-09-12 Toshiba Corp 半導体装置の製造方法
JP2695185B2 (ja) * 1988-05-02 1997-12-24 株式会社日立製作所 半導体集積回路装置及びその製造方法
JP2508818B2 (ja) * 1988-10-03 1996-06-19 三菱電機株式会社 半導体装置の製造方法
JPH0744275B2 (ja) * 1988-10-06 1995-05-15 日本電気株式会社 高耐圧ｍｏｓ型半導体装置の製造方法
US5028973A (en) * 1989-06-19 1991-07-02 Harris Corporation Bipolar transistor with high efficient emitter
US5188978A (en) * 1990-03-02 1993-02-23 International Business Machines Corporation Controlled silicon doping of III-V compounds by thermal oxidation of silicon capping layer
US5296388A (en) * 1990-07-13 1994-03-22 Matsushita Electric Industrial Co., Ltd. Fabrication method for semiconductor devices
JPH04199507A (ja) * 1990-11-28 1992-07-20 Mitsubishi Electric Corp ３―Ｖ族化合物半導体へのｎ型不純物固相拡散方法
DE59409300D1 (de) * 1993-06-23 2000-05-31 Siemens Ag Verfahren zur Herstellung von einem Isolationsgraben in einem Substrat für Smart-Power-Technologien
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JPS499186A (cg-RX-API-DMAC10.html) * 1972-05-11 1974-01-26
US3928095A (en) * 1972-11-08 1975-12-23 Suwa Seikosha Kk Semiconductor device and process for manufacturing same

Also Published As

Publication number Publication date
US4063967A (en) 1977-12-20
DE2449688B2 (de) 1979-10-04
GB1464801A (en) 1977-02-16
FR2288391A1 (fr) 1976-05-14
JPS5165561A (cg-RX-API-DMAC10.html) 1976-06-07
DE2449688C3 (de) 1980-07-10
DE2449688A1 (de) 1976-04-22
FR2288391B1 (cg-RX-API-DMAC10.html) 1982-10-01
JPS5952533B2 (ja) 1984-12-20
CA1055620A (en) 1979-05-29

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