IT1020412B - Procedimento per compensare cari che limitofe in strati sottili di silicio cresciuti per deposizione epitassiale su un substrato - Google Patents

Procedimento per compensare cari che limitofe in strati sottili di silicio cresciuti per deposizione epitassiale su un substrato

Info

Publication number
IT1020412B
IT1020412B IT26877/74A IT2687774A IT1020412B IT 1020412 B IT1020412 B IT 1020412B IT 26877/74 A IT26877/74 A IT 26877/74A IT 2687774 A IT2687774 A IT 2687774A IT 1020412 B IT1020412 B IT 1020412B
Authority
IT
Italy
Prior art keywords
dears
compensating
limits
procedure
substrate
Prior art date
Application number
IT26877/74A
Other languages
English (en)
Original Assignee
Siemens Ag
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens Ag filed Critical Siemens Ag
Application granted granted Critical
Publication of IT1020412B publication Critical patent/IT1020412B/it

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26Bombardment with radiation
    • H01L21/263Bombardment with radiation with high-energy radiation
    • H01L21/265Bombardment with radiation with high-energy radiation producing ion implantation
    • H01L21/26506Bombardment with radiation with high-energy radiation producing ion implantation in group IV semiconductors
    • H01L21/26513Bombardment with radiation with high-energy radiation producing ion implantation in group IV semiconductors of electrically active species
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00Metal treatment
    • Y10S148/024Defect control-gettering and annealing
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00Metal treatment
    • Y10S148/053Field effect transistors fets
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00Metal treatment
    • Y10S148/097Lattice strain and defects
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00Semiconductor device manufacturing: process
    • Y10S438/91Controlling charging state at semiconductor-insulator interface

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Power Engineering (AREA)
  • Toxicology (AREA)
  • Health & Medical Sciences (AREA)
  • Formation Of Insulating Films (AREA)
  • Recrystallisation Techniques (AREA)
IT26877/74A 1973-09-03 1974-09-03 Procedimento per compensare cari che limitofe in strati sottili di silicio cresciuti per deposizione epitassiale su un substrato IT1020412B (it)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE2344320A DE2344320C2 (de) 1973-09-03 1973-09-03 Verfahren zur Kompensation von Grenzflächenladungen bei epitaktisch auf ein Substrat aufgewachsenen Siliziumdünnschichten

Publications (1)

Publication Number Publication Date
IT1020412B true IT1020412B (it) 1977-12-20

Family

ID=5891465

Family Applications (1)

Application Number Title Priority Date Filing Date
IT26877/74A IT1020412B (it) 1973-09-03 1974-09-03 Procedimento per compensare cari che limitofe in strati sottili di silicio cresciuti per deposizione epitassiale su un substrato

Country Status (15)

Country Link
US (1) US3909307A (it)
JP (1) JPS5931222B2 (it)
AT (1) AT340480B (it)
BE (1) BE819487A (it)
CA (1) CA1044577A (it)
CH (1) CH570044A5 (it)
DE (1) DE2344320C2 (it)
DK (1) DK461074A (it)
FR (1) FR2242777B1 (it)
GB (1) GB1465830A (it)
IE (1) IE39656B1 (it)
IT (1) IT1020412B (it)
LU (1) LU70843A1 (it)
NL (1) NL7410851A (it)
SE (1) SE392782B (it)

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5931224B2 (ja) * 1974-02-18 1984-07-31 日本電気株式会社 半導体装置
JPS5716499B2 (it) * 1974-05-27 1982-04-05
FR2380637A1 (fr) * 1977-02-15 1978-09-08 Westinghouse Electric Corp Procede de traitement de circuits integres cmos et circuits obtenus
US4183134A (en) * 1977-02-15 1980-01-15 Westinghouse Electric Corp. High yield processing for silicon-on-sapphire CMOS integrated circuits
US4149906A (en) * 1977-04-29 1979-04-17 International Business Machines Corporation Process for fabrication of merged transistor logic (MTL) cells
JPS5466767A (en) * 1977-11-08 1979-05-29 Fujitsu Ltd Manufacture for sos construction
US4177084A (en) * 1978-06-09 1979-12-04 Hewlett-Packard Company Method for producing a low defect layer of silicon-on-sapphire wafer
US4330343A (en) * 1979-01-04 1982-05-18 The United States Of America As Represented By The Secretary Of The Navy Refractory passivated ion-implanted GaAs ohmic contacts
US4459159A (en) * 1982-09-29 1984-07-10 Mara William C O Method for making semi-insulating substrate by post-process heating of oxygenated and doped silicon
US4509990A (en) * 1982-11-15 1985-04-09 Hughes Aircraft Company Solid phase epitaxy and regrowth process with controlled defect density profiling for heteroepitaxial semiconductor on insulator composite substrates
JPS59159563A (ja) * 1983-03-02 1984-09-10 Toshiba Corp 半導体装置の製造方法
US4732867A (en) * 1986-11-03 1988-03-22 General Electric Company Method of forming alignment marks in sapphire
US4766482A (en) * 1986-12-09 1988-08-23 General Electric Company Semiconductor device and method of making the same
US5453153A (en) * 1987-11-13 1995-09-26 Kopin Corporation Zone-melting recrystallization process
US5244819A (en) * 1991-10-22 1993-09-14 Honeywell Inc. Method to getter contamination in semiconductor devices

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3520741A (en) * 1967-12-18 1970-07-14 Hughes Aircraft Co Method of simultaneous epitaxial growth and ion implantation
US3658586A (en) * 1969-04-11 1972-04-25 Rca Corp Epitaxial silicon on hydrogen magnesium aluminate spinel single crystals
US3582410A (en) * 1969-07-11 1971-06-01 North American Rockwell Process for producing metal base semiconductor devices
US3767483A (en) * 1970-05-11 1973-10-23 Hitachi Ltd Method of making semiconductor devices

Also Published As

Publication number Publication date
DE2344320C2 (de) 1975-06-26
DK461074A (it) 1975-05-05
NL7410851A (nl) 1975-03-05
US3909307A (en) 1975-09-30
AT340480B (de) 1977-12-12
CA1044577A (en) 1978-12-19
ATA640174A (de) 1977-04-15
GB1465830A (en) 1977-03-02
IE39656L (en) 1975-03-03
SE392782B (sv) 1977-04-18
IE39656B1 (en) 1978-12-06
CH570044A5 (it) 1975-11-28
LU70843A1 (it) 1975-01-02
JPS5931222B2 (ja) 1984-07-31
FR2242777A1 (it) 1975-03-28
JPS5056184A (it) 1975-05-16
FR2242777B1 (it) 1979-01-05
BE819487A (fr) 1974-12-31
SE7411020L (it) 1975-03-04
DE2344320B1 (de) 1974-11-07

Similar Documents

Publication Publication Date Title
IT1020412B (it) Procedimento per compensare cari che limitofe in strati sottili di silicio cresciuti per deposizione epitassiale su un substrato
IT1037445B (it) Metodo per l accrescimento di strati epitassiali di silicio
BE788374A (fr) Procede de depot d'une couche epitaxiale d'un materiau semi-conducteur sur la surface d'un substrat
BE791927A (fr) Procede de depot par croissance epitaxiale de couches de cristaux semi-conducteurs
IT1025933B (it) Procedimento per la formazione di uno strato di rivestimento di poliolefina su una superficie di un metallo
IT1091351B (it) Procedimento per formare uno strato epitassiale sulla superficie di un sottostrato particolarmente per semiconduttori
IT1002650B (it) Metodo ed apparato per il deposito di pellicola sottile su un substrato
CA1025334A (en) Dual growth rate method of depositing epitaxial crystalline layers
IT1059531B (it) Articolo comprendente un rivestimento unito ad un substrato per mezzo di uno strato di fondo intermedio atto a favorirne l adesione
IT1160100B (it) Apparecchiatura per depositare uno strato epitassiale di materiale semiconduttore monocristallino
IT1016580B (it) Dispositivo per la deposizione di strati sottili sotto vuoto
IT1069886B (it) Procedimento per l accrescimento epitassiale di uno strato semiconduttore liscio
FR2369685A1 (fr) Procede de production de couches de silicium cristallin sur un substrat et produits ainsi obtenus
CA918303A (en) Method of epitaxially depositing a semiconductor compound
CA1022439A (en) Method of depositing epitaxial layers on a substrate from the liquid phase
IT946536B (it) Procedimento per formare strati metallici su un substrato
FR2289235A1 (fr) Procede de depot de films sur un substrat par croissance
IT965832B (it) Procedimento per la fabbricazione di lingotti metallici a strati multipli
IT1100682B (it) Metodo per la deposizione epitassiale di parecchi strati
IT1028009B (it) Metodo di accrescimento di un composto semiconduttore
IT947677B (it) Procedimento per il deposito di strati magnetizzabili mediante spruzzatura catodica
IT8447979A1 (it) Procedimento per deposizione epitassiale di strati di semiconduttori.
IT981333B (it) Procedimento per formare strati di materiale semiconduttore su un substrato
IT1115628B (it) Processo per formare uno strato epitassiale di silicio monocristallino su un substrato di silicio
GB1540675A (en) Substrate for epitaxial deposition of silicon