CH570044A5 - - Google Patents
Info
- Publication number
- CH570044A5 CH570044A5 CH1131974A CH1131974A CH570044A5 CH 570044 A5 CH570044 A5 CH 570044A5 CH 1131974 A CH1131974 A CH 1131974A CH 1131974 A CH1131974 A CH 1131974A CH 570044 A5 CH570044 A5 CH 570044A5
- Authority
- CH
- Switzerland
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
- H01L21/26506—Bombardment with radiation with high-energy radiation producing ion implantation in group IV semiconductors
- H01L21/26513—Bombardment with radiation with high-energy radiation producing ion implantation in group IV semiconductors of electrically active species
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/024—Defect control-gettering and annealing
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/053—Field effect transistors fets
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/097—Lattice strain and defects
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S438/00—Semiconductor device manufacturing: process
- Y10S438/91—Controlling charging state at semiconductor-insulator interface
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE2344320A DE2344320C2 (de) | 1973-09-03 | 1973-09-03 | Verfahren zur Kompensation von Grenzflächenladungen bei epitaktisch auf ein Substrat aufgewachsenen Siliziumdünnschichten |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CH570044A5 true CH570044A5 (xx) | 1975-11-28 |
Family
ID=5891465
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CH1131974A CH570044A5 (xx) | 1973-09-03 | 1974-08-20 |
Country Status (15)
| Country | Link |
|---|---|
| US (1) | US3909307A (xx) |
| JP (1) | JPS5931222B2 (xx) |
| AT (1) | AT340480B (xx) |
| BE (1) | BE819487A (xx) |
| CA (1) | CA1044577A (xx) |
| CH (1) | CH570044A5 (xx) |
| DE (1) | DE2344320C2 (xx) |
| DK (1) | DK461074A (xx) |
| FR (1) | FR2242777B1 (xx) |
| GB (1) | GB1465830A (xx) |
| IE (1) | IE39656B1 (xx) |
| IT (1) | IT1020412B (xx) |
| LU (1) | LU70843A1 (xx) |
| NL (1) | NL7410851A (xx) |
| SE (1) | SE392782B (xx) |
Families Citing this family (15)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5931224B2 (ja) * | 1974-02-18 | 1984-07-31 | 日本電気株式会社 | 半導体装置 |
| JPS5716499B2 (xx) * | 1974-05-27 | 1982-04-05 | ||
| FR2380637A1 (fr) * | 1977-02-15 | 1978-09-08 | Westinghouse Electric Corp | Procede de traitement de circuits integres cmos et circuits obtenus |
| US4183134A (en) * | 1977-02-15 | 1980-01-15 | Westinghouse Electric Corp. | High yield processing for silicon-on-sapphire CMOS integrated circuits |
| US4149906A (en) * | 1977-04-29 | 1979-04-17 | International Business Machines Corporation | Process for fabrication of merged transistor logic (MTL) cells |
| JPS5466767A (en) * | 1977-11-08 | 1979-05-29 | Fujitsu Ltd | Manufacture for sos construction |
| US4177084A (en) * | 1978-06-09 | 1979-12-04 | Hewlett-Packard Company | Method for producing a low defect layer of silicon-on-sapphire wafer |
| US4330343A (en) * | 1979-01-04 | 1982-05-18 | The United States Of America As Represented By The Secretary Of The Navy | Refractory passivated ion-implanted GaAs ohmic contacts |
| US4459159A (en) * | 1982-09-29 | 1984-07-10 | Mara William C O | Method for making semi-insulating substrate by post-process heating of oxygenated and doped silicon |
| US4509990A (en) * | 1982-11-15 | 1985-04-09 | Hughes Aircraft Company | Solid phase epitaxy and regrowth process with controlled defect density profiling for heteroepitaxial semiconductor on insulator composite substrates |
| JPS59159563A (ja) * | 1983-03-02 | 1984-09-10 | Toshiba Corp | 半導体装置の製造方法 |
| US4732867A (en) * | 1986-11-03 | 1988-03-22 | General Electric Company | Method of forming alignment marks in sapphire |
| US4766482A (en) * | 1986-12-09 | 1988-08-23 | General Electric Company | Semiconductor device and method of making the same |
| US5453153A (en) * | 1987-11-13 | 1995-09-26 | Kopin Corporation | Zone-melting recrystallization process |
| US5244819A (en) * | 1991-10-22 | 1993-09-14 | Honeywell Inc. | Method to getter contamination in semiconductor devices |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3520741A (en) * | 1967-12-18 | 1970-07-14 | Hughes Aircraft Co | Method of simultaneous epitaxial growth and ion implantation |
| US3658586A (en) * | 1969-04-11 | 1972-04-25 | Rca Corp | Epitaxial silicon on hydrogen magnesium aluminate spinel single crystals |
| US3582410A (en) * | 1969-07-11 | 1971-06-01 | North American Rockwell | Process for producing metal base semiconductor devices |
| US3767483A (en) * | 1970-05-11 | 1973-10-23 | Hitachi Ltd | Method of making semiconductor devices |
-
1973
- 1973-09-03 DE DE2344320A patent/DE2344320C2/de not_active Expired
-
1974
- 1974-07-26 GB GB3309174A patent/GB1465830A/en not_active Expired
- 1974-08-05 AT AT640174A patent/AT340480B/de not_active Expired
- 1974-08-06 IE IE1650/74A patent/IE39656B1/xx unknown
- 1974-08-13 NL NL7410851A patent/NL7410851A/xx not_active Application Discontinuation
- 1974-08-19 US US498476A patent/US3909307A/en not_active Expired - Lifetime
- 1974-08-20 CH CH1131974A patent/CH570044A5/xx not_active IP Right Cessation
- 1974-08-26 FR FR7429151A patent/FR2242777B1/fr not_active Expired
- 1974-08-30 JP JP49099824A patent/JPS5931222B2/ja not_active Expired
- 1974-08-30 DK DK461074A patent/DK461074A/da unknown
- 1974-08-30 SE SE7411020A patent/SE392782B/xx unknown
- 1974-08-30 CA CA208,240A patent/CA1044577A/en not_active Expired
- 1974-09-03 BE BE148166A patent/BE819487A/xx unknown
- 1974-09-03 IT IT26877/74A patent/IT1020412B/it active
- 1974-09-03 LU LU70843A patent/LU70843A1/xx unknown
Also Published As
| Publication number | Publication date |
|---|---|
| SE392782B (sv) | 1977-04-18 |
| US3909307A (en) | 1975-09-30 |
| GB1465830A (en) | 1977-03-02 |
| BE819487A (fr) | 1974-12-31 |
| SE7411020L (xx) | 1975-03-04 |
| IE39656L (en) | 1975-03-03 |
| IE39656B1 (en) | 1978-12-06 |
| FR2242777B1 (xx) | 1979-01-05 |
| DE2344320C2 (de) | 1975-06-26 |
| JPS5931222B2 (ja) | 1984-07-31 |
| DK461074A (xx) | 1975-05-05 |
| CA1044577A (en) | 1978-12-19 |
| DE2344320B1 (de) | 1974-11-07 |
| JPS5056184A (xx) | 1975-05-16 |
| FR2242777A1 (xx) | 1975-03-28 |
| NL7410851A (nl) | 1975-03-05 |
| ATA640174A (de) | 1977-04-15 |
| LU70843A1 (xx) | 1975-01-02 |
| IT1020412B (it) | 1977-12-20 |
| AT340480B (de) | 1977-12-12 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PL | Patent ceased |