IT1001109B - Cella di memorizzazione realizzata con dispositivi semiconduttori - Google Patents

Cella di memorizzazione realizzata con dispositivi semiconduttori

Info

Publication number
IT1001109B
IT1001109B IT41028/73A IT4102873A IT1001109B IT 1001109 B IT1001109 B IT 1001109B IT 41028/73 A IT41028/73 A IT 41028/73A IT 4102873 A IT4102873 A IT 4102873A IT 1001109 B IT1001109 B IT 1001109B
Authority
IT
Italy
Prior art keywords
semiconductor devices
storage cell
cell made
storage
semiconductor
Prior art date
Application number
IT41028/73A
Other languages
English (en)
Italian (it)
Original Assignee
Ibm
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ibm filed Critical Ibm
Application granted granted Critical
Publication of IT1001109B publication Critical patent/IT1001109B/it

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/711—Insulated-gate field-effect transistors [IGFET] having floating bodies
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/403—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration common to a multiplicity of memory cells, i.e. external refresh
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/403—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration common to a multiplicity of memory cells, i.e. external refresh
    • G11C11/404—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration common to a multiplicity of memory cells, i.e. external refresh with one charge-transfer gate, e.g. MOS transistor, per cell
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/82—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components
    • H10D84/83—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET]
    • H10D84/85—Complementary IGFETs, e.g. CMOS

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Semiconductor Memories (AREA)
  • Dram (AREA)
  • Static Random-Access Memory (AREA)
IT41028/73A 1972-12-29 1973-11-28 Cella di memorizzazione realizzata con dispositivi semiconduttori IT1001109B (it)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US319402A US3919569A (en) 1972-12-29 1972-12-29 Dynamic two device memory cell which provides D.C. sense signals

Publications (1)

Publication Number Publication Date
IT1001109B true IT1001109B (it) 1976-04-20

Family

ID=23242108

Family Applications (1)

Application Number Title Priority Date Filing Date
IT41028/73A IT1001109B (it) 1972-12-29 1973-11-28 Cella di memorizzazione realizzata con dispositivi semiconduttori

Country Status (7)

Country Link
US (1) US3919569A (en, 2012)
JP (1) JPS5320353B2 (en, 2012)
CA (1) CA998769A (en, 2012)
DE (1) DE2363089C3 (en, 2012)
FR (1) FR2212608B1 (en, 2012)
GB (1) GB1436439A (en, 2012)
IT (1) IT1001109B (en, 2012)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4151610A (en) * 1976-03-16 1979-04-24 Tokyo Shibaura Electric Co., Ltd. High density semiconductor memory device formed in a well and having more than one capacitor
JPS5313319A (en) * 1976-07-22 1978-02-06 Fujitsu Ltd Semiconductor memory unit
US5359562A (en) * 1976-07-26 1994-10-25 Hitachi, Ltd. Semiconductor memory having polycrystalline silicon load resistors and CMOS peripheral circuitry
JPS586234B2 (ja) * 1977-11-17 1983-02-03 富士通株式会社 半導体記憶装置
US4395723A (en) * 1980-05-27 1983-07-26 Eliyahou Harari Floating substrate dynamic RAM cell with lower punch-through means
JPS572563A (en) * 1980-06-05 1982-01-07 Nec Corp Semiconductor memory cell
JPS57152592A (en) * 1981-03-17 1982-09-20 Nec Corp Semiconductor integrated memory
JPS57157560A (en) * 1981-03-23 1982-09-29 Nec Corp Semiconductor integrated memory and using method thereof
US4706107A (en) * 1981-06-04 1987-11-10 Nippon Electric Co., Ltd. IC memory cells with reduced alpha particle influence
JPS5864694A (ja) * 1981-10-14 1983-04-18 Nec Corp 半導体メモリセル
JPS5894191A (ja) * 1981-11-30 1983-06-04 Nec Corp Ｍｏｓトランジスタ回路及びその使用方法
US4910709A (en) * 1988-08-10 1990-03-20 International Business Machines Corporation Complementary metal-oxide-semiconductor transistor and one-capacitor dynamic-random-access memory cell
DE4041260A1 (de) * 1990-12-21 1992-07-02 Messerschmitt Boelkow Blohm Ausleseschaltung fuer eine statische speicherzelle
JP3243146B2 (ja) * 1994-12-08 2002-01-07 株式会社東芝 半導体装置

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3543052A (en) * 1967-06-05 1970-11-24 Bell Telephone Labor Inc Device employing igfet in combination with schottky diode
US3609479A (en) * 1968-02-29 1971-09-28 Westinghouse Electric Corp Semiconductor integrated circuit having mis and bipolar transistor elements
US3770988A (en) * 1970-09-04 1973-11-06 Gen Electric Self-registered surface charge launch-receive device and method for making
US3729719A (en) * 1970-11-27 1973-04-24 Ibm Stored charge storage cell using a non latching scr type device
US3721839A (en) * 1971-03-24 1973-03-20 Philips Corp Solid state imaging device with fet sensor
US3794862A (en) * 1972-04-05 1974-02-26 Rockwell International Corp Substrate bias circuit

Also Published As

Publication number Publication date
CA998769A (en) 1976-10-19
DE2363089B2 (de) 1980-12-18
US3919569A (en) 1975-11-11
DE2363089C3 (de) 1981-08-06
JPS5320353B2 (en, 2012) 1978-06-26
JPS4998976A (en, 2012) 1974-09-19
FR2212608A1 (en, 2012) 1974-07-26
DE2363089A1 (de) 1974-07-04
FR2212608B1 (en, 2012) 1976-06-25
GB1436439A (en) 1976-05-19
USB319402I5 (en, 2012) 1975-01-28

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