USB319402I5 - - Google Patents

Info

Publication number
USB319402I5
USB319402I5 US31940272A USB319402I5 US B319402 I5 USB319402 I5 US B319402I5 US 31940272 A US31940272 A US 31940272A US B319402 I5 USB319402 I5 US B319402I5
Authority
US
United States
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
Other languages
English (en)
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to US319402A priority Critical patent/US3919569A/en
Priority to GB5296073A priority patent/GB1436439A/en
Priority to CA186,206A priority patent/CA998769A/en
Priority to IT41028/73A priority patent/IT1001109B/it
Priority to FR7343097A priority patent/FR2212608B1/fr
Priority to JP13491273A priority patent/JPS5320353B2/ja
Priority to DE2363089A priority patent/DE2363089C3/de
Publication of USB319402I5 publication Critical patent/USB319402I5/en
Application granted granted Critical
Publication of US3919569A publication Critical patent/US3919569A/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/711—Insulated-gate field-effect transistors [IGFET] having floating bodies
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/403—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration common to a multiplicity of memory cells, i.e. external refresh
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/403—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration common to a multiplicity of memory cells, i.e. external refresh
    • G11C11/404—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration common to a multiplicity of memory cells, i.e. external refresh with one charge-transfer gate, e.g. MOS transistor, per cell
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/82—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components
    • H10D84/83—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET]
    • H10D84/85—Complementary IGFETs, e.g. CMOS

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Semiconductor Memories (AREA)
  • Static Random-Access Memory (AREA)
  • Dram (AREA)
US319402A 1972-12-29 1972-12-29 Dynamic two device memory cell which provides D.C. sense signals Expired - Lifetime US3919569A (en)

Priority Applications (7)

Application Number Priority Date Filing Date Title
US319402A US3919569A (en) 1972-12-29 1972-12-29 Dynamic two device memory cell which provides D.C. sense signals
GB5296073A GB1436439A (en) 1972-12-29 1973-11-15 Semiconductor memory cell
CA186,206A CA998769A (en) 1972-12-29 1973-11-20 Dynamic two device memory cell which provides d.c. sense signals
FR7343097A FR2212608B1 (en, 2012) 1972-12-29 1973-11-28
IT41028/73A IT1001109B (it) 1972-12-29 1973-11-28 Cella di memorizzazione realizzata con dispositivi semiconduttori
JP13491273A JPS5320353B2 (en, 2012) 1972-12-29 1973-12-04
DE2363089A DE2363089C3 (de) 1972-12-29 1973-12-19 Speicherzelle mit Feldeffekttransistoren

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US319402A US3919569A (en) 1972-12-29 1972-12-29 Dynamic two device memory cell which provides D.C. sense signals

Publications (2)

Publication Number Publication Date
USB319402I5 true USB319402I5 (en, 2012) 1975-01-28
US3919569A US3919569A (en) 1975-11-11

Family

ID=23242108

Family Applications (1)

Application Number Title Priority Date Filing Date
US319402A Expired - Lifetime US3919569A (en) 1972-12-29 1972-12-29 Dynamic two device memory cell which provides D.C. sense signals

Country Status (7)

Country Link
US (1) US3919569A (en, 2012)
JP (1) JPS5320353B2 (en, 2012)
CA (1) CA998769A (en, 2012)
DE (1) DE2363089C3 (en, 2012)
FR (1) FR2212608B1 (en, 2012)
GB (1) GB1436439A (en, 2012)
IT (1) IT1001109B (en, 2012)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4151610A (en) * 1976-03-16 1979-04-24 Tokyo Shibaura Electric Co., Ltd. High density semiconductor memory device formed in a well and having more than one capacitor
JPS5313319A (en) * 1976-07-22 1978-02-06 Fujitsu Ltd Semiconductor memory unit
US5359562A (en) * 1976-07-26 1994-10-25 Hitachi, Ltd. Semiconductor memory having polycrystalline silicon load resistors and CMOS peripheral circuitry
JPS586234B2 (ja) * 1977-11-17 1983-02-03 富士通株式会社 半導体記憶装置
US4395723A (en) * 1980-05-27 1983-07-26 Eliyahou Harari Floating substrate dynamic RAM cell with lower punch-through means
JPS572563A (en) * 1980-06-05 1982-01-07 Nec Corp Semiconductor memory cell
JPS57152592A (en) * 1981-03-17 1982-09-20 Nec Corp Semiconductor integrated memory
JPS57157560A (en) * 1981-03-23 1982-09-29 Nec Corp Semiconductor integrated memory and using method thereof
US4706107A (en) * 1981-06-04 1987-11-10 Nippon Electric Co., Ltd. IC memory cells with reduced alpha particle influence
JPS5864694A (ja) * 1981-10-14 1983-04-18 Nec Corp 半導体メモリセル
JPS5894191A (ja) * 1981-11-30 1983-06-04 Nec Corp Ｍｏｓトランジスタ回路及びその使用方法
US4910709A (en) * 1988-08-10 1990-03-20 International Business Machines Corporation Complementary metal-oxide-semiconductor transistor and one-capacitor dynamic-random-access memory cell
DE4041260A1 (de) * 1990-12-21 1992-07-02 Messerschmitt Boelkow Blohm Ausleseschaltung fuer eine statische speicherzelle
JP3243146B2 (ja) * 1994-12-08 2002-01-07 株式会社東芝 半導体装置

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3609479A (en) * 1968-02-29 1971-09-28 Westinghouse Electric Corp Semiconductor integrated circuit having mis and bipolar transistor elements
FR2105251A1 (en, 2012) * 1970-09-04 1972-04-28 Gen Electric
US3697962A (en) * 1970-11-27 1972-10-10 Ibm Two device monolithic bipolar memory array
US3721839A (en) * 1971-03-24 1973-03-20 Philips Corp Solid state imaging device with fet sensor
US3794862A (en) * 1972-04-05 1974-02-26 Rockwell International Corp Substrate bias circuit

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3543052A (en) * 1967-06-05 1970-11-24 Bell Telephone Labor Inc Device employing igfet in combination with schottky diode

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3609479A (en) * 1968-02-29 1971-09-28 Westinghouse Electric Corp Semiconductor integrated circuit having mis and bipolar transistor elements
FR2105251A1 (en, 2012) * 1970-09-04 1972-04-28 Gen Electric
US3697962A (en) * 1970-11-27 1972-10-10 Ibm Two device monolithic bipolar memory array
US3721839A (en) * 1971-03-24 1973-03-20 Philips Corp Solid state imaging device with fet sensor
US3794862A (en) * 1972-04-05 1974-02-26 Rockwell International Corp Substrate bias circuit

Also Published As

Publication number Publication date
CA998769A (en) 1976-10-19
DE2363089B2 (de) 1980-12-18
US3919569A (en) 1975-11-11
DE2363089C3 (de) 1981-08-06
JPS5320353B2 (en, 2012) 1978-06-26
JPS4998976A (en, 2012) 1974-09-19
FR2212608A1 (en, 2012) 1974-07-26
IT1001109B (it) 1976-04-20
DE2363089A1 (de) 1974-07-04
FR2212608B1 (en, 2012) 1976-06-25
GB1436439A (en) 1976-05-19

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