JPS5313319A - Semiconductor memory unit - Google Patents

Semiconductor memory unit

Info

Publication number
JPS5313319A
JPS5313319A JP8741176A JP8741176A JPS5313319A JP S5313319 A JPS5313319 A JP S5313319A JP 8741176 A JP8741176 A JP 8741176A JP 8741176 A JP8741176 A JP 8741176A JP S5313319 A JPS5313319 A JP S5313319A
Authority
JP
Japan
Prior art keywords
semiconductor memory
memory unit
boltage
vth
critical
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP8741176A
Other languages
Japanese (ja)
Other versions
JPS571073B2 (en
Inventor
Yoshiiku Togei
Akira Takei
Kunihiko Wada
Motoo Nakano
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP8741176A priority Critical patent/JPS5313319A/en
Publication of JPS5313319A publication Critical patent/JPS5313319A/en
Publication of JPS571073B2 publication Critical patent/JPS571073B2/ja
Granted legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/35—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices with charge storage in a depletion layer, e.g. charge coupled devices

Abstract

PURPOSE:A semiconductor memory is realized which utilizes the nature of charge dependence of critical boltage Vth, thereby improving a integration degree.
JP8741176A 1976-07-22 1976-07-22 Semiconductor memory unit Granted JPS5313319A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP8741176A JPS5313319A (en) 1976-07-22 1976-07-22 Semiconductor memory unit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP8741176A JPS5313319A (en) 1976-07-22 1976-07-22 Semiconductor memory unit

Publications (2)

Publication Number Publication Date
JPS5313319A true JPS5313319A (en) 1978-02-06
JPS571073B2 JPS571073B2 (en) 1982-01-09

Family

ID=13914126

Family Applications (1)

Application Number Title Priority Date Filing Date
JP8741176A Granted JPS5313319A (en) 1976-07-22 1976-07-22 Semiconductor memory unit

Country Status (1)

Country Link
JP (1) JPS5313319A (en)

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4998976A (en) * 1972-12-29 1974-09-19

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4998976A (en) * 1972-12-29 1974-09-19

Also Published As

Publication number Publication date
JPS571073B2 (en) 1982-01-09

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