JPS57152592A - Semiconductor integrated memory - Google Patents
Semiconductor integrated memoryInfo
- Publication number
- JPS57152592A JPS57152592A JP56038470A JP3847081A JPS57152592A JP S57152592 A JPS57152592 A JP S57152592A JP 56038470 A JP56038470 A JP 56038470A JP 3847081 A JP3847081 A JP 3847081A JP S57152592 A JPS57152592 A JP S57152592A
- Authority
- JP
- Japan
- Prior art keywords
- memory
- external power
- memory cells
- type
- mosfet
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title abstract 2
- 108090000699 N-Type Calcium Channels Proteins 0.000 abstract 1
- 102000004129 N-Type Calcium Channels Human genes 0.000 abstract 1
- 108010075750 P-Type Calcium Channels Proteins 0.000 abstract 1
- 230000000295 complement effect Effects 0.000 abstract 1
- 238000010586 diagram Methods 0.000 abstract 1
- 230000003071 parasitic effect Effects 0.000 abstract 1
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/24—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using capacitors
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Static Random-Access Memory (AREA)
- Semiconductor Memories (AREA)
Abstract
PURPOSE:To make the titled memory highly dense and the have large capacity capable and to stabilize the operation of the titled memory, and, at the same time, to prevent the PN junction from forward biases, by using two complementary type FET cells. CONSTITUTION:The diagram shows that, when a semiconductor integrating memory is made by using memory cells using two MOSFETs and two external power sources, a P type channel 1st MOSFET are configured by 101-104 and an N type channel 2nd MOSFET is configured by 105-108. The memory cells which store electric charge in a parasitic condencer connected to P type electrodes 103, 108 which are under electrically floating condition, are configured with these two. To N type electrodes 104, 107 of the these memory cells, the higher external power source 113 is connected, and, therefore, any voltage which are higher than the external power source is not impressed upon a reading bit line 110.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP56038470A JPS57152592A (en) | 1981-03-17 | 1981-03-17 | Semiconductor integrated memory |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP56038470A JPS57152592A (en) | 1981-03-17 | 1981-03-17 | Semiconductor integrated memory |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS57152592A true JPS57152592A (en) | 1982-09-20 |
JPH0227760B2 JPH0227760B2 (en) | 1990-06-19 |
Family
ID=12526122
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP56038470A Granted JPS57152592A (en) | 1981-03-17 | 1981-03-17 | Semiconductor integrated memory |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS57152592A (en) |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS4998976A (en) * | 1972-12-29 | 1974-09-19 |
-
1981
- 1981-03-17 JP JP56038470A patent/JPS57152592A/en active Granted
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS4998976A (en) * | 1972-12-29 | 1974-09-19 |
Also Published As
Publication number | Publication date |
---|---|
JPH0227760B2 (en) | 1990-06-19 |
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