IN2015DN02030A - - Google Patents
Info
- Publication number
- IN2015DN02030A IN2015DN02030A IN2030DEN2015A IN2015DN02030A IN 2015DN02030 A IN2015DN02030 A IN 2015DN02030A IN 2030DEN2015 A IN2030DEN2015 A IN 2030DEN2015A IN 2015DN02030 A IN2015DN02030 A IN 2015DN02030A
- Authority
- IN
- India
- Prior art keywords
- wafer
- discloses
- group iii
- iii nitride
- present
- Prior art date
Links
- 235000012431 wafers Nutrition 0.000 abstract 5
- 150000004767 nitrides Chemical class 0.000 abstract 2
- 229910045601 alloy Inorganic materials 0.000 abstract 1
- 239000000956 alloy Substances 0.000 abstract 1
- 239000013078 crystal Substances 0.000 abstract 1
- 238000010297 mechanical methods and process Methods 0.000 abstract 1
- 238000000034 method Methods 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/20—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds
- H01L29/201—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds including two or more compounds, e.g. alloys
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B7/00—Single-crystal growth from solutions using solvents which are liquid at normal temperature, e.g. aqueous solutions
- C30B7/10—Single-crystal growth from solutions using solvents which are liquid at normal temperature, e.g. aqueous solutions by application of pressure, e.g. hydrothermal processes
- C30B7/105—Single-crystal growth from solutions using solvents which are liquid at normal temperature, e.g. aqueous solutions by application of pressure, e.g. hydrothermal processes using ammonia as solvent, i.e. ammonothermal processes
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
- C30B29/403—AIII-nitrides
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
- C30B29/403—AIII-nitrides
- C30B29/406—Gallium nitride
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure
- C30B33/08—Etching
- C30B33/10—Etching in solutions or melts
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02002—Preparing wafers
- H01L21/02005—Preparing bulk and homogeneous wafers
- H01L21/02008—Multistep processes
- H01L21/0201—Specific process step
- H01L21/02013—Grinding, lapping
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02002—Preparing wafers
- H01L21/02005—Preparing bulk and homogeneous wafers
- H01L21/02008—Multistep processes
- H01L21/0201—Specific process step
- H01L21/02019—Chemical etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/20—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds
- H01L29/2003—Nitride compounds
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Inorganic Chemistry (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Ceramic Engineering (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Processing Of Stones Or Stones Resemblance Materials (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US201261694119P | 2012-08-28 | 2012-08-28 | |
PCT/US2013/032006 WO2014035481A1 (fr) | 2012-08-28 | 2013-03-15 | Tranche de nitrure du groupe iii et son procédé de fabrication |
Publications (1)
Publication Number | Publication Date |
---|---|
IN2015DN02030A true IN2015DN02030A (fr) | 2015-08-14 |
Family
ID=48050922
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
IN2030DEN2015 IN2015DN02030A (fr) | 2012-08-28 | 2013-03-15 |
Country Status (8)
Country | Link |
---|---|
US (2) | US9543393B2 (fr) |
EP (1) | EP2890537A1 (fr) |
JP (1) | JP6144347B2 (fr) |
KR (1) | KR101895035B1 (fr) |
CN (1) | CN104781057B (fr) |
IN (1) | IN2015DN02030A (fr) |
TW (1) | TWI621163B (fr) |
WO (1) | WO2014035481A1 (fr) |
Families Citing this family (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US9518340B2 (en) | 2006-04-07 | 2016-12-13 | Sixpoint Materials, Inc. | Method of growing group III nitride crystals |
US10161059B2 (en) * | 2006-04-07 | 2018-12-25 | Sixpoint Materials, Inc. | Group III nitride bulk crystals and their fabrication method |
EP2890537A1 (fr) | 2012-08-28 | 2015-07-08 | Sixpoint Materials Inc. | Tranche de nitrure du groupe iii et son procédé de fabrication |
JP6169704B2 (ja) | 2012-09-25 | 2017-07-26 | シックスポイント マテリアルズ, インコーポレイテッド | Iii族窒化物結晶を成長させる方法 |
WO2014051684A1 (fr) | 2012-09-26 | 2014-04-03 | Sixpoint Materials, Inc. | Tranches de nitrure du groupe iii ainsi que procédé de fabrication et procédé d'essai |
CN105917035B (zh) | 2014-01-17 | 2019-06-18 | 三菱化学株式会社 | GaN基板、GaN基板的制造方法、GaN结晶的制造方法和半导体器件的制造方法 |
JP6292080B2 (ja) * | 2014-08-21 | 2018-03-14 | 三菱ケミカル株式会社 | 非極性または半極性GaN基板 |
US10141435B2 (en) | 2016-12-23 | 2018-11-27 | Sixpoint Materials, Inc. | Electronic device using group III nitride semiconductor and its fabrication method |
CN106783579B (zh) * | 2016-12-29 | 2019-12-13 | 苏州纳维科技有限公司 | Iii族氮化物衬底及其制备方法 |
WO2019066787A1 (fr) | 2017-09-26 | 2019-04-04 | Sixpoint Materials, Inc. | Germe cristallin pour la croissance d'un cristal massif de nitrure de gallium dans de l'ammoniac supercritique et procédé de fabrication |
CN108074834A (zh) * | 2018-01-08 | 2018-05-25 | 中国电子科技集团公司第四十六研究所 | 一种用于具有极性的异形晶片的极性面判定方法 |
KR102126186B1 (ko) * | 2018-06-27 | 2020-06-24 | 경희대학교 산학협력단 | 질화 갈륨 기판의 제조 방법 |
TWI836391B (zh) * | 2022-03-29 | 2024-03-21 | 兆遠科技股份有限公司 | 脆軟基板及脆軟基板製作方法 |
Family Cites Families (47)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5984998A (en) | 1997-11-14 | 1999-11-16 | American Iron And Steel Institute | Method and apparatus for off-gas composition sensing |
EP1307321A2 (fr) * | 2000-08-07 | 2003-05-07 | MEMC Electronic Materials, Inc. | Procede de traitement d'une plaquette semi-conductrice par polissage double face |
US7072034B2 (en) * | 2001-06-08 | 2006-07-04 | Kla-Tencor Corporation | Systems and methods for inspection of specimen surfaces |
PL219109B1 (pl) | 2001-06-06 | 2015-03-31 | Ammono Spółka Z Ograniczoną Odpowiedzialnością | Sposób otrzymywania objętościowego monokrystalicznego azotku zawierającego gal oraz urządzenie do otrzymywania objętościowego monokrystalicznego azotku zawierającego gal |
US6488767B1 (en) * | 2001-06-08 | 2002-12-03 | Advanced Technology Materials, Inc. | High surface quality GaN wafer and method of fabricating same |
DE60234856D1 (de) * | 2001-10-26 | 2010-02-04 | Ammono Sp Zoo | Substrat für epitaxie |
US7638346B2 (en) | 2001-12-24 | 2009-12-29 | Crystal Is, Inc. | Nitride semiconductor heterostructures and related methods |
US7022992B2 (en) | 2002-01-17 | 2006-04-04 | American Air Liquide, Inc. | Method and apparatus for real-time monitoring of furnace flue gases |
TWI334890B (en) | 2002-12-11 | 2010-12-21 | Ammono Sp Zoo | Process for obtaining bulk mono-crystalline gallium-containing nitride, eliminating impurities from the obtained crystal and manufacturing substrates made of bulk mono-crystalline gallium-containing nitride |
US7098487B2 (en) | 2002-12-27 | 2006-08-29 | General Electric Company | Gallium nitride crystal and method of making same |
US7323256B2 (en) * | 2003-11-13 | 2008-01-29 | Cree, Inc. | Large area, uniformly low dislocation density GaN substrate and process for making the same |
KR100541111B1 (ko) | 2004-06-25 | 2006-01-11 | 삼성전기주식회사 | 다파장 반도체 레이저 제조방법 |
DE102004039076A1 (de) | 2004-08-12 | 2006-02-23 | Sms Demag Ag | Berührungslose Abgasmessung mittels FTIR-Spektroskopie an metallurgischen Aggregaten |
US20060124956A1 (en) | 2004-12-13 | 2006-06-15 | Hui Peng | Quasi group III-nitride substrates and methods of mass production of the same |
JP4849296B2 (ja) | 2005-04-11 | 2012-01-11 | 日立電線株式会社 | GaN基板 |
JP4792802B2 (ja) * | 2005-04-26 | 2011-10-12 | 住友電気工業株式会社 | Iii族窒化物結晶の表面処理方法 |
EP1917382A4 (fr) | 2005-07-08 | 2009-09-02 | Univ California | Procédé de croissance de cristaux de nitrures du groupe iii dans de l'ammoniac supercritique en utilisant un autoclave |
JP4696886B2 (ja) * | 2005-12-08 | 2011-06-08 | 日立電線株式会社 | 自立した窒化ガリウム単結晶基板の製造方法、および窒化物半導体素子の製造方法 |
WO2008048303A2 (fr) | 2005-12-12 | 2008-04-24 | Kyma Technologies, Inc. | Articles en nitrures du groupe III et leurs procédés de fabrication |
JP4803717B2 (ja) | 2005-12-13 | 2011-10-26 | 株式会社タカトリ | ワイヤソー |
US7878883B2 (en) | 2006-01-26 | 2011-02-01 | Memc Electronics Materials, Inc. | Wire saw ingot slicing system and method with ingot preheating, web preheating, slurry temperature control and/or slurry flow rate control |
JP4930081B2 (ja) * | 2006-04-03 | 2012-05-09 | 住友電気工業株式会社 | GaN結晶基板 |
US9518340B2 (en) | 2006-04-07 | 2016-12-13 | Sixpoint Materials, Inc. | Method of growing group III nitride crystals |
WO2007117689A2 (fr) | 2006-04-07 | 2007-10-18 | The Regents Of The University Of California | Procede de developpement de cristaux de nitrure de gallium de grande surface dans de l'ammoniac surcritique et cristaux de nitrure de gallium de grande surface |
JP5218047B2 (ja) * | 2006-04-28 | 2013-06-26 | 住友電気工業株式会社 | 窒化ガリウム結晶を作製する方法および窒化ガリウムウエハ |
JP5332168B2 (ja) * | 2006-11-17 | 2013-11-06 | 住友電気工業株式会社 | Iii族窒化物結晶の製造方法 |
WO2008088838A1 (fr) | 2007-01-17 | 2008-07-24 | Crystal Is, Inc. | Réduction des défauts de croissance de cristaux de nitrure d'aluminium ensemencés |
CN100592539C (zh) * | 2007-09-12 | 2010-02-24 | 泰谷光电科技股份有限公司 | 发光二极管元件的制造方法 |
JP4395812B2 (ja) * | 2008-02-27 | 2010-01-13 | 住友電気工業株式会社 | 窒化物半導体ウエハ−加工方法 |
EP2291551B1 (fr) * | 2008-06-04 | 2018-04-25 | SixPoint Materials, Inc. | Récipient sous haute pression pour faire croître des cristaux de nitrure de groupe iii et procédé destiné à faire croître des cristaux de nitrure de groupe iii à l'aide d'un récipient sous haute pression et d'un cristal de nitrure de groupe iii |
EP2281076A1 (fr) * | 2008-06-04 | 2011-02-09 | Sixpoint Materials, Inc. | Procédés de création des cristaux de nitrure du groupe iii de cristallinité améliorée à partir de germe de nitrure du groupe iii initial par croissance ammoniothermique |
WO2009151642A1 (fr) | 2008-06-12 | 2009-12-17 | Sixpoint Materials, Inc. | Procédé de mise à l'essai de tranches de nitrure du groupe iii et tranches de nitrure du groupe iii avec des données d'essai |
CN106867595A (zh) | 2008-06-20 | 2017-06-20 | 伊内奥斯生物股份公司 | 通过气化和发酵将二氧化碳封存到醇中的方法 |
US20120000415A1 (en) * | 2010-06-18 | 2012-01-05 | Soraa, Inc. | Large Area Nitride Crystal and Method for Making It |
JP5475772B2 (ja) | 2008-07-11 | 2014-04-16 | サンーゴバン アブレイシブズ,インコーポレイティド | ワイヤスライシングシステム |
JP2011530471A (ja) | 2008-08-07 | 2011-12-22 | ソラア インコーポレーテッド | 大規模アンモノサーマル法による窒化ガリウムボウルの製造方法 |
US8979999B2 (en) | 2008-08-07 | 2015-03-17 | Soraa, Inc. | Process for large-scale ammonothermal manufacturing of gallium nitride boules |
US8148801B2 (en) * | 2008-08-25 | 2012-04-03 | Soraa, Inc. | Nitride crystal with removable surface layer and methods of manufacture |
US8680581B2 (en) * | 2008-12-26 | 2014-03-25 | Toyoda Gosei Co., Ltd. | Method for producing group III nitride semiconductor and template substrate |
JP2012516572A (ja) | 2009-01-30 | 2012-07-19 | エイエムジー・アイデアルキャスト・ソーラー・コーポレーション | シード層及びシード層の製造方法 |
WO2010113237A1 (fr) | 2009-04-03 | 2010-10-07 | パナソニック株式会社 | Élément à semi-conducteurs de nitrure et son procédé de fabrication |
JP2011100860A (ja) * | 2009-11-06 | 2011-05-19 | Sumitomo Electric Ind Ltd | イオン注入iii族窒化物半導体基板ならびにiii族窒化物半導体層接合基板およびiii族窒化物半導体デバイスの製造方法 |
JP5471387B2 (ja) * | 2009-12-09 | 2014-04-16 | 三菱化学株式会社 | Iii族窒化物結晶半導体基板の製造方法、及びiii族窒化物結晶半導体基板 |
JP5757068B2 (ja) | 2010-08-02 | 2015-07-29 | 住友電気工業株式会社 | GaN結晶の成長方法 |
EP2890537A1 (fr) | 2012-08-28 | 2015-07-08 | Sixpoint Materials Inc. | Tranche de nitrure du groupe iii et son procédé de fabrication |
JP6169704B2 (ja) | 2012-09-25 | 2017-07-26 | シックスポイント マテリアルズ, インコーポレイテッド | Iii族窒化物結晶を成長させる方法 |
WO2014051684A1 (fr) | 2012-09-26 | 2014-04-03 | Sixpoint Materials, Inc. | Tranches de nitrure du groupe iii ainsi que procédé de fabrication et procédé d'essai |
-
2013
- 2013-03-15 EP EP13715053.8A patent/EP2890537A1/fr not_active Withdrawn
- 2013-03-15 US US13/834,871 patent/US9543393B2/en active Active
- 2013-03-15 US US13/835,636 patent/US8921231B2/en active Active
- 2013-03-15 WO PCT/US2013/032006 patent/WO2014035481A1/fr active Application Filing
- 2013-03-15 IN IN2030DEN2015 patent/IN2015DN02030A/en unknown
- 2013-03-15 KR KR1020157007789A patent/KR101895035B1/ko active IP Right Grant
- 2013-03-15 CN CN201380048864.4A patent/CN104781057B/zh active Active
- 2013-03-15 JP JP2015529788A patent/JP6144347B2/ja active Active
- 2013-08-27 TW TW102130676A patent/TWI621163B/zh active
Also Published As
Publication number | Publication date |
---|---|
US20140061662A1 (en) | 2014-03-06 |
CN104781057B (zh) | 2018-04-24 |
JP2015529626A (ja) | 2015-10-08 |
US20140065796A1 (en) | 2014-03-06 |
KR20150088993A (ko) | 2015-08-04 |
CN104781057A (zh) | 2015-07-15 |
WO2014035481A1 (fr) | 2014-03-06 |
JP6144347B2 (ja) | 2017-06-07 |
KR101895035B1 (ko) | 2018-09-04 |
TW201413807A (zh) | 2014-04-01 |
US9543393B2 (en) | 2017-01-10 |
EP2890537A1 (fr) | 2015-07-08 |
TWI621163B (zh) | 2018-04-11 |
US8921231B2 (en) | 2014-12-30 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
IN2015DN02030A (fr) | ||
TW201614860A (en) | Systems and methods for preparing GaN and related materials for micro assembly | |
EP3352200A4 (fr) | PLAQUETTE ÉPITAXIALE DE SiC, DISPOSITIF DE PRODUCTION DE PLAQUETTE ÉPITAXIALE DE SiC, PROCÉDÉ DE PRODUCTION DE PLAQUETTE ÉPITAXIALE DE SiC ET DISPOSITIF À SEMI-CONDUCTEURS | |
SG10201604524PA (en) | ATOMIC LAYER ETCHING OF GaN AND OTHER III-V MATERIALS | |
EP3007209A4 (fr) | Substrat monocristallin de carbure de silicium pour tranche monocristalline de carbure de silicium épitaxiale, et procédé de fabrication de celui-ci | |
EP3314658A4 (fr) | Dispositifs gan sur des substrats de silicium modifiés | |
EP3330415A4 (fr) | Procédé de production de plaquette de monocristal de carbure de silicium épitaxiale | |
EP2755228A4 (fr) | Tranche épitaxiale de sic et procédé de fabrication de celle-ci | |
GB201210134D0 (en) | Selective sidewall growth of semiconductor material | |
EP2413350A4 (fr) | Substrat de croissance de semi-conducteurs au nitrure du groupe iii, substrat épitaxial pour semi-conducteurs au nitrure du groupe iii, élément semi-conducteur au nitrure du groupe iii, substrat autonome pour semi-conducteurs au nitrure du groupe iii et leurs procédés de fabrication | |
EP3605585A4 (fr) | Procédé de fabrication de tranche de sic reformé, tranche de sic fixée à une couche épitaxiale, son procédé de fabrication, et procédé de traitement de surface | |
EP3193357A4 (fr) | Procédé de traitement de tranche de semi-conducteur, procédé de fabrication de tranche liée, et procédé de fabrication de plaquette épitaxiale | |
EP3255181A4 (fr) | MONOCRISTAL DE GaN ET SON PROCÉDÉ DE FABRICATION | |
PL2570523T3 (pl) | Sposób wytwarzania gazowego trójchlorku galu oraz sposób wytwarzania kryształu półprzewodnika azotkowego | |
TW201614083A (en) | Method for forming nitride semiconductor layer and method for manufacturing semiconductor device | |
GB2574879B (en) | Substrates for III-nitride epitaxy | |
EP3266907A4 (fr) | Tranche épitaxiale de carbure de silicium et procédé de fabrication de tranche épitaxiale de carbure de silicium (sic) | |
EP3396030A4 (fr) | Substrat semi-conducteur, et plaquette épitaxiale et son procédé de production | |
EP3171392A4 (fr) | Procédé de production de plaquettes de carbure de silicium épitaxiques | |
EP3260581A4 (fr) | Procédé de production d'une tranche épitaxiale monocristalline de carbure de silicium et tranche épitaxiale monocristalline de carbure de silicium | |
EP3936644A4 (fr) | Procédé de fabrication d'un substrat épitaxial en sic et dispositif de fabrication s'y rapportant | |
EP2701184A4 (fr) | SUBSTRAT DE GaN COMPOSÉ ET PROCÉDÉ DE PRODUCTION ASSOCIÉ, ET DISPOSITIF SEMI-CONDUCTEUR DE NITRURE DU GROUPE III ET PROCÉDÉ DE PRODUCTION ASSOCIÉ | |
EP2657378A4 (fr) | PROCÉDÉ ET DISPOSITIF DE FABRICATION D'UN SUBSTRAT DE NITRURE DE GALLIUM (GaN) AUTOSUPPORTÉ | |
EP2821532A4 (fr) | Procédé pour traiter un substrat de nitrure de groupe iii et procédé pour fabriquer un substrat épitaxial | |
EP3141635A4 (fr) | Substrat semi-conducteur, tranche épitaxiale et procédé de fabrication d'une tranche épitaxiale |