IN2014CN00877A - - Google Patents
Info
- Publication number
- IN2014CN00877A IN2014CN00877A IN877CHN2014A IN2014CN00877A IN 2014CN00877 A IN2014CN00877 A IN 2014CN00877A IN 877CHN2014 A IN877CHN2014 A IN 877CHN2014A IN 2014CN00877 A IN2014CN00877 A IN 2014CN00877A
- Authority
- IN
- India
- Prior art keywords
- treating
- composition
- silicon substrates
- nxn
- alkaline
- Prior art date
Links
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract 3
- 239000000203 mixture Substances 0.000 abstract 3
- 229910052710 silicon Inorganic materials 0.000 abstract 3
- 239000010703 silicon Substances 0.000 abstract 3
- 239000000758 substrate Substances 0.000 abstract 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 abstract 3
- 238000000034 method Methods 0.000 abstract 2
- QGZKDVFQNNGYKY-UHFFFAOYSA-O Ammonium Chemical compound [NH4+] QGZKDVFQNNGYKY-UHFFFAOYSA-O 0.000 abstract 1
- 239000002253 acid Substances 0.000 abstract 1
- 150000007513 acids Chemical class 0.000 abstract 1
- 125000001931 aliphatic group Chemical group 0.000 abstract 1
- 229910052784 alkaline earth metal Inorganic materials 0.000 abstract 1
- 150000001342 alkaline earth metals Chemical class 0.000 abstract 1
- 125000002877 alkyl aryl group Chemical group 0.000 abstract 1
- 239000000908 ammonium hydroxide Substances 0.000 abstract 1
- 239000007853 buffer solution Substances 0.000 abstract 1
- 230000005611 electricity Effects 0.000 abstract 1
- 230000005670 electromagnetic radiation Effects 0.000 abstract 1
- 229910052739 hydrogen Inorganic materials 0.000 abstract 1
- 239000001257 hydrogen Substances 0.000 abstract 1
- 125000004435 hydrogen atom Chemical group [H]* 0.000 abstract 1
- 238000004519 manufacturing process Methods 0.000 abstract 1
- 125000001453 quaternary ammonium group Chemical group 0.000 abstract 1
- 150000003839 salts Chemical class 0.000 abstract 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K13/00—Etching, surface-brightening or pickling compositions
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K3/00—Materials not provided for elsewhere
- C09K3/14—Anti-slip materials; Abrasives
- C09K3/1454—Abrasive powders, suspensions and pastes for polishing
- C09K3/1463—Aqueous liquid suspensions
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09G—POLISHING COMPOSITIONS; SKI WAXES
- C09G1/00—Polishing compositions
- C09G1/04—Aqueous dispersions
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K13/00—Etching, surface-brightening or pickling compositions
- C09K13/04—Etching, surface-brightening or pickling compositions containing an inorganic acid
- C09K13/06—Etching, surface-brightening or pickling compositions containing an inorganic acid with organic material
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
- C11D7/22—Organic compounds
- C11D7/34—Organic compounds containing sulfur
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0236—Special surface textures
- H01L31/02363—Special surface textures of the semiconductor body itself, e.g. textured active layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic Table
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Organic Chemistry (AREA)
- Materials Engineering (AREA)
- Electromagnetism (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Power Engineering (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Dispersion Chemistry (AREA)
- Manufacturing & Machinery (AREA)
- Inorganic Chemistry (AREA)
- Life Sciences & Earth Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Oil, Petroleum & Natural Gas (AREA)
- Wood Science & Technology (AREA)
- Cleaning Or Drying Semiconductors (AREA)
- Weting (AREA)
- Photovoltaic Devices (AREA)
- Detergent Compositions (AREA)
- Materials Applied To Surfaces To Minimize Adherence Of Mist Or Water (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US201161521386P | 2011-08-09 | 2011-08-09 | |
PCT/IB2012/053576 WO2013021296A1 (en) | 2011-08-09 | 2012-07-12 | Aqueous alkaline compositions and method for treating the surface of silicon substrates |
Publications (1)
Publication Number | Publication Date |
---|---|
IN2014CN00877A true IN2014CN00877A (zh) | 2015-04-03 |
Family
ID=47667939
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
IN877CHN2014 IN2014CN00877A (zh) | 2011-08-09 | 2012-07-12 |
Country Status (9)
Country | Link |
---|---|
US (1) | US20140134778A1 (zh) |
JP (1) | JP2014529641A (zh) |
KR (1) | KR101922855B1 (zh) |
CN (1) | CN103717687B (zh) |
IN (1) | IN2014CN00877A (zh) |
MY (1) | MY167595A (zh) |
SG (1) | SG10201605697UA (zh) |
TW (1) | TWI564386B (zh) |
WO (1) | WO2013021296A1 (zh) |
Families Citing this family (16)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP6462572B2 (ja) * | 2013-09-05 | 2019-01-30 | 小林 光 | 水素製造装置、水素製造方法、水素製造用シリコン微細粒子、及び水素製造用シリコン微細粒子の製造方法 |
JP6412377B2 (ja) * | 2013-09-11 | 2018-10-24 | 花王株式会社 | 樹脂マスク層用洗浄剤組成物及び回路基板の製造方法 |
KR102668708B1 (ko) * | 2016-09-05 | 2024-05-23 | 동우 화인켐 주식회사 | 폴리실리콘 식각액 조성물 및 반도체 소자의 제조 방법 |
US11271129B2 (en) * | 2016-11-03 | 2022-03-08 | Total Marketing Services | Surface treatment of solar cells |
US10934485B2 (en) | 2017-08-25 | 2021-03-02 | Versum Materials Us, Llc | Etching solution for selectively removing silicon over silicon-germanium alloy from a silicon-germanium/ silicon stack during manufacture of a semiconductor device |
CN108550639B (zh) * | 2018-03-21 | 2020-08-21 | 台州市棱智塑业有限公司 | 一种硅异质结太阳能电池界面处理剂及处理方法 |
KR102624328B1 (ko) * | 2018-10-31 | 2024-01-15 | 상라오 신위안 웨동 테크놀러지 디벨롭먼트 컴퍼니, 리미티드 | 태양 전지 모듈 |
CN112996881A (zh) | 2018-11-15 | 2021-06-18 | 恩特格里斯公司 | 氮化硅蚀刻组合物及方法 |
CN109609290B (zh) * | 2018-12-13 | 2021-04-09 | 蓝思科技(长沙)有限公司 | 一种玻璃抛光后用清洗剂和清洗方法 |
JPWO2020166676A1 (ja) * | 2019-02-13 | 2021-12-16 | 株式会社トクヤマ | 次亜塩素酸イオン、及びpH緩衝剤を含む半導体ウェハの処理液 |
JP7433293B2 (ja) | 2019-03-26 | 2024-02-19 | 富士フイルム株式会社 | 洗浄液 |
CN110473936A (zh) * | 2019-07-26 | 2019-11-19 | 镇江仁德新能源科技有限公司 | 一种单面湿法黑硅制绒方法 |
WO2021050333A1 (en) * | 2019-09-10 | 2021-03-18 | Fujifilm Electronic Materials U.S.A., Inc. | Etching composition |
CN112745990B (zh) * | 2019-10-30 | 2022-06-03 | 洛阳阿特斯光伏科技有限公司 | 一种无磷双组份清洗剂及其制备方法和应用 |
KR20210119164A (ko) | 2020-03-24 | 2021-10-05 | 동우 화인켐 주식회사 | 결정성 실리콘 식각액 조성물, 및 이를 이용한 패턴 형성 방법 |
CN112680229A (zh) * | 2021-01-29 | 2021-04-20 | 深圳市百通达科技有限公司 | 一种湿电子化学的硅基材料蚀刻液及其制备方法 |
Family Cites Families (26)
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US5466389A (en) * | 1994-04-20 | 1995-11-14 | J. T. Baker Inc. | PH adjusted nonionic surfactant-containing alkaline cleaner composition for cleaning microelectronics substrates |
US5989353A (en) * | 1996-10-11 | 1999-11-23 | Mallinckrodt Baker, Inc. | Cleaning wafer substrates of metal contamination while maintaining wafer smoothness |
JP2000208466A (ja) * | 1999-01-12 | 2000-07-28 | Dainippon Screen Mfg Co Ltd | 基板処理方法および基板処理装置 |
JP4206233B2 (ja) * | 2002-07-22 | 2009-01-07 | 旭硝子株式会社 | 研磨剤および研磨方法 |
US20040077295A1 (en) * | 2002-08-05 | 2004-04-22 | Hellring Stuart D. | Process for reducing dishing and erosion during chemical mechanical planarization |
JP2005268665A (ja) * | 2004-03-19 | 2005-09-29 | Fujimi Inc | 研磨用組成物 |
DE602005000732T2 (de) * | 2004-06-25 | 2007-12-06 | Jsr Corp. | Reinigungszusammensetzung für Halbleiterkomponente und Verfahren zur Herstellung eines Halbleitergeräts |
WO2006110279A1 (en) * | 2005-04-08 | 2006-10-19 | Sachem, Inc. | Selective wet etching of metal nitrides |
CN101356628B (zh) * | 2005-08-05 | 2012-01-04 | 高级技术材料公司 | 用于对金属膜进行平坦化的高通量化学机械抛光组合物 |
KR100786949B1 (ko) * | 2005-12-08 | 2007-12-17 | 주식회사 엘지화학 | 연마 선택도 조절 보조제 및 이를 함유한 cmp 슬러리 |
JP2007180451A (ja) * | 2005-12-28 | 2007-07-12 | Fujifilm Corp | 化学的機械的平坦化方法 |
US8685909B2 (en) * | 2006-09-21 | 2014-04-01 | Advanced Technology Materials, Inc. | Antioxidants for post-CMP cleaning formulations |
JP2008124222A (ja) * | 2006-11-10 | 2008-05-29 | Fujifilm Corp | 研磨液 |
JP2010512657A (ja) * | 2006-12-22 | 2010-04-22 | テクノ セミケム シーオー., エルティーディー. | ゼオライトを含有する銅化学機械的研磨組成物 |
JP2008181955A (ja) * | 2007-01-23 | 2008-08-07 | Fujifilm Corp | 金属用研磨液及びそれを用いた研磨方法 |
JP2008277723A (ja) * | 2007-03-30 | 2008-11-13 | Fujifilm Corp | 金属用研磨液及び研磨方法 |
US20100136794A1 (en) * | 2007-05-14 | 2010-06-03 | Basf Se | Method for removing etching residues from semiconductor components |
KR101561708B1 (ko) * | 2007-05-17 | 2015-10-19 | 인티그리스, 인코포레이티드 | Cmp후 세정 제제용 신규한 항산화제 |
WO2009032728A2 (en) * | 2007-08-31 | 2009-03-12 | Jh Biotech, Inc. | Preparation of fatty acids in solid form |
KR20100082012A (ko) * | 2007-11-16 | 2010-07-15 | 이케이씨 테크놀로지, 인코포레이티드 | 반도체 기판으로부터의 금속 하드 마스크 에칭 잔류물의 제거를 위한 조성물 |
KR101094662B1 (ko) * | 2008-07-24 | 2011-12-20 | 솔브레인 주식회사 | 폴리실리콘 연마정지제를 함유하는 화학 기계적 연마조성물 |
JP5553985B2 (ja) * | 2008-12-11 | 2014-07-23 | 三洋化成工業株式会社 | 電子材料用洗浄剤 |
US8361237B2 (en) * | 2008-12-17 | 2013-01-29 | Air Products And Chemicals, Inc. | Wet clean compositions for CoWP and porous dielectrics |
US9045717B2 (en) * | 2010-01-29 | 2015-06-02 | Advanced Technology Materials, Inc. | Cleaning agent for semiconductor provided with metal wiring |
SG186108A1 (en) * | 2010-06-09 | 2013-01-30 | Basf Se | Aqueous alkaline etching and cleaning composition and method for treating the surface of silicon substrates |
EP2460860A1 (de) * | 2010-12-02 | 2012-06-06 | Basf Se | Verwendung von Mischungen zur Entfernung von Polyurethanen von Metalloberflächen |
-
2012
- 2012-07-12 CN CN201280038487.1A patent/CN103717687B/zh not_active Expired - Fee Related
- 2012-07-12 JP JP2014524461A patent/JP2014529641A/ja active Pending
- 2012-07-12 SG SG10201605697UA patent/SG10201605697UA/en unknown
- 2012-07-12 US US14/131,304 patent/US20140134778A1/en not_active Abandoned
- 2012-07-12 WO PCT/IB2012/053576 patent/WO2013021296A1/en active Application Filing
- 2012-07-12 IN IN877CHN2014 patent/IN2014CN00877A/en unknown
- 2012-07-12 KR KR1020147003265A patent/KR101922855B1/ko active IP Right Grant
- 2012-07-12 MY MYPI2013004626A patent/MY167595A/en unknown
- 2012-08-09 TW TW101128828A patent/TWI564386B/zh not_active IP Right Cessation
Also Published As
Publication number | Publication date |
---|---|
KR101922855B1 (ko) | 2019-02-27 |
US20140134778A1 (en) | 2014-05-15 |
KR20140057259A (ko) | 2014-05-12 |
TW201313894A (zh) | 2013-04-01 |
WO2013021296A1 (en) | 2013-02-14 |
CN103717687B (zh) | 2016-05-18 |
MY167595A (en) | 2018-09-20 |
JP2014529641A (ja) | 2014-11-13 |
CN103717687A (zh) | 2014-04-09 |
SG10201605697UA (en) | 2016-09-29 |
TWI564386B (zh) | 2017-01-01 |
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