IN2014CH02110A - - Google Patents

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Publication number
IN2014CH02110A
IN2014CH02110A IN2110CH2014A IN2014CH02110A IN 2014CH02110 A IN2014CH02110 A IN 2014CH02110A IN 2110CH2014 A IN2110CH2014 A IN 2110CH2014A IN 2014CH02110 A IN2014CH02110 A IN 2014CH02110A
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IN
India
Prior art keywords
semiconductor chip
type semiconductor
semiconductor layer
disposed
pad electrode
Prior art date
Application number
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English (en)
Inventor
Akinori Yoneda
Akiyoshi Kinouchi
Hisashi Kasai
Yoshiyuki Aihara
Hirokazu Sasa
Shinji Nakamura
Original Assignee
Nichia Corp
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Filing date
Publication date
Application filed by Nichia Corp filed Critical Nichia Corp
Publication of IN2014CH02110A publication Critical patent/IN2014CH02110A/en

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    • H01L33/52Encapsulations
    • H01L33/54Encapsulations having a particular shape

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  • Condensed Matter Physics & Semiconductors (AREA)
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Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6273945B2 (ja) * 2013-04-26 2018-02-07 日亜化学工業株式会社 発光装置
JP6354273B2 (ja) 2014-04-10 2018-07-11 日亜化学工業株式会社 発光装置及び発光装置の製造方法
US9978724B2 (en) * 2014-06-27 2018-05-22 Bridgelux, Inc. Red flip chip light emitting diode, package, and method of making the same
JP6384202B2 (ja) * 2014-08-28 2018-09-05 日亜化学工業株式会社 発光装置の製造方法
US10685943B2 (en) 2015-05-14 2020-06-16 Mediatek Inc. Semiconductor chip package with resilient conductive paste post and fabrication method thereof
US9842831B2 (en) * 2015-05-14 2017-12-12 Mediatek Inc. Semiconductor package and fabrication method thereof
JP6471641B2 (ja) 2015-08-04 2019-02-20 日亜化学工業株式会社 発光装置の製造方法
JP6717324B2 (ja) 2018-02-27 2020-07-01 日亜化学工業株式会社 発光素子
JP6978697B2 (ja) 2018-11-15 2021-12-08 日亜化学工業株式会社 発光装置の製造方法
JP7004948B2 (ja) 2019-04-27 2022-01-21 日亜化学工業株式会社 発光モジュールの製造方法
US11672256B2 (en) * 2020-08-11 2023-06-13 EAST HAMPTON SHUCKER COMPANY, Inc. Oyster shucking clamp apparatus and method

Family Cites Families (25)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05299530A (ja) 1992-04-17 1993-11-12 Oki Electric Ind Co Ltd 樹脂封止半導体装置及びその製造方法
JP2606267Y2 (ja) * 1992-10-22 2000-10-10 日本航空電子工業株式会社 表面実装用チップ発光ダイオード及びそれを用いたメンブレンシートスィッチ
JP3356068B2 (ja) 1998-07-27 2002-12-09 松下電器産業株式会社 光電変換素子の製造方法
JP2000244012A (ja) * 1998-12-22 2000-09-08 Toyoda Gosei Co Ltd Iii族窒化物系化合物半導体素子の製造方法
US6331450B1 (en) 1998-12-22 2001-12-18 Toyoda Gosei Co., Ltd. Method of manufacturing semiconductor device using group III nitride compound
JP4214704B2 (ja) 2002-03-20 2009-01-28 日亜化学工業株式会社 半導体素子
US7009305B2 (en) * 2004-06-30 2006-03-07 Agere Systems Inc. Methods and apparatus for integrated circuit ball bonding using stacked ball bumps
JP5068472B2 (ja) * 2006-04-12 2012-11-07 昭和電工株式会社 発光装置の製造方法
US9159888B2 (en) 2007-01-22 2015-10-13 Cree, Inc. Wafer level phosphor coating method and devices fabricated utilizing method
US9024349B2 (en) 2007-01-22 2015-05-05 Cree, Inc. Wafer level phosphor coating method and devices fabricated utilizing method
JP4926787B2 (ja) 2007-03-30 2012-05-09 アオイ電子株式会社 半導体装置の製造方法
SG148901A1 (en) * 2007-07-09 2009-01-29 Micron Technology Inc Packaged semiconductor assemblies and methods for manufacturing such assemblies
TWI382770B (zh) * 2008-12-11 2013-01-11 Univ Nat Taiwan 視訊影像傳輸中遇到封包遺失時的有效選取方法
JP4724222B2 (ja) 2008-12-12 2011-07-13 株式会社東芝 発光装置の製造方法
WO2010150809A1 (ja) 2009-06-24 2010-12-29 日亜化学工業株式会社 窒化物半導体発光ダイオード
JP5152133B2 (ja) 2009-09-18 2013-02-27 豊田合成株式会社 発光素子
WO2011145794A1 (ko) * 2010-05-18 2011-11-24 서울반도체 주식회사 파장변환층을 갖는 발광 다이오드 칩과 그 제조 방법, 및 그것을 포함하는 패키지 및 그 제조 방법
EP2448028B1 (en) * 2010-10-29 2017-05-31 Nichia Corporation Light emitting apparatus and production method thereof
KR101154320B1 (ko) * 2010-12-20 2012-06-13 엘지이노텍 주식회사 발광소자, 발광소자 패키지 및 이를 포함하는 조명 장치
JP2012142326A (ja) * 2010-12-28 2012-07-26 Mitsubishi Heavy Ind Ltd 発光素子及び発光素子の製造方法
US9269878B2 (en) * 2011-05-27 2016-02-23 Lg Innotek Co., Ltd. Light emitting device and light emitting apparatus
KR101276053B1 (ko) * 2011-07-22 2013-06-17 삼성전자주식회사 반도체 발광소자 및 발광장치
JP5755102B2 (ja) 2011-10-14 2015-07-29 シチズンホールディングス株式会社 半導体発光素子
KR101932727B1 (ko) * 2012-05-07 2018-12-27 삼성전자주식회사 범프 구조물, 이를 갖는 반도체 패키지 및 이의 제조 방법
JP6273945B2 (ja) * 2013-04-26 2018-02-07 日亜化学工業株式会社 発光装置

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CN104124319B (zh) 2018-01-02
US20140319567A1 (en) 2014-10-30
KR20140128255A (ko) 2014-11-05
US20160365498A1 (en) 2016-12-15
KR102120268B1 (ko) 2020-06-08
TWI599080B (zh) 2017-09-11
EP2797131B1 (en) 2020-11-11
US9461216B2 (en) 2016-10-04
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BR102014009947B1 (pt) 2021-12-21
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US20150311410A1 (en) 2015-10-29
US10224470B2 (en) 2019-03-05

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