IN2012DN03272A - - Google Patents

Download PDF

Info

Publication number
IN2012DN03272A
IN2012DN03272A IN3272DEN2012A IN2012DN03272A IN 2012DN03272 A IN2012DN03272 A IN 2012DN03272A IN 3272DEN2012 A IN3272DEN2012 A IN 3272DEN2012A IN 2012DN03272 A IN2012DN03272 A IN 2012DN03272A
Authority
IN
India
Prior art keywords
solar cell
junction
reverse
mbe
intrinsic
Prior art date
Application number
Other languages
English (en)
Inventor
James David Garnett
Peter Dingus
Shumin Wang
Original Assignee
Uriel Solar Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Uriel Solar Inc filed Critical Uriel Solar Inc
Publication of IN2012DN03272A publication Critical patent/IN2012DN03272A/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02422—Non-crystalline insulating materials, e.g. glass, polymers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02439—Materials
    • H01L21/02469—Group 12/16 materials
    • H01L21/0248—Tellurides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02494—Structure
    • H01L21/02496—Layer structure
    • H01L21/02502—Layer structure consisting of two layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02551—Group 12/16 materials
    • H01L21/02562—Tellurides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/0257—Doping during depositing
    • H01L21/02573—Conductivity type
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/02631—Physical deposition at reduced pressure, e.g. MBE, sputtering, evaporation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/036—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes
    • H01L31/0392—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate
    • H01L31/03925—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate including AIIBVI compound materials, e.g. CdTe, CdS
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier
    • H01L31/065—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the graded gap type
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier
    • H01L31/072—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN heterojunction type
    • H01L31/073—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN heterojunction type comprising only AIIBVI compound semiconductors, e.g. CdS/CdTe solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier
    • H01L31/075—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PIN type
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/1828—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIBVI compounds, e.g. CdS, ZnS, CdTe
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/1828—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIBVI compounds, e.g. CdS, ZnS, CdTe
    • H01L31/1832—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIBVI compounds, e.g. CdS, ZnS, CdTe comprising ternary compounds, e.g. Hg Cd Te
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/1828—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIBVI compounds, e.g. CdS, ZnS, CdTe
    • H01L31/1836—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIBVI compounds, e.g. CdS, ZnS, CdTe comprising a growth substrate not being an AIIBVI compound
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/541—CuInSe2 material PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/543—Solar cells from Group II-VI materials
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/548—Amorphous silicon PV cells
IN3272DEN2012 2009-12-10 2010-12-10 IN2012DN03272A (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US28553109P 2009-12-10 2009-12-10
PCT/US2010/059969 WO2011072269A2 (en) 2009-12-10 2010-12-10 HIGH POWER EFFICIENCY POLYCRYSTALLINE CdTe THIN FILM SEMICONDUCTOR PHOTOVOLTAIC CELL STRUCTURES FOR USE IN SOLAR ELECTRICITY GENERATION

Publications (1)

Publication Number Publication Date
IN2012DN03272A true IN2012DN03272A (de) 2015-10-23

Family

ID=44141563

Family Applications (1)

Application Number Title Priority Date Filing Date
IN3272DEN2012 IN2012DN03272A (de) 2009-12-10 2010-12-10

Country Status (8)

Country Link
US (1) US20110139249A1 (de)
EP (1) EP2481094A4 (de)
JP (1) JP5813654B2 (de)
CN (1) CN102714252A (de)
BR (1) BR112012012383A2 (de)
CA (1) CA2780175A1 (de)
IN (1) IN2012DN03272A (de)
WO (1) WO2011072269A2 (de)

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8664524B2 (en) 2008-07-17 2014-03-04 Uriel Solar, Inc. High power efficiency, large substrate, polycrystalline CdTe thin film semiconductor photovoltaic cell structures grown by molecular beam epitaxy at high deposition rate for use in solar electricity generation
US20120192923A1 (en) * 2011-02-01 2012-08-02 General Electric Company Photovoltaic device
US9147793B2 (en) 2011-06-20 2015-09-29 Alliance For Sustainable Energy, Llc CdTe devices and method of manufacturing same
CN104221165A (zh) * 2012-01-17 2014-12-17 第一太阳能有限公司 具有吸收多层的光伏器件及制造该光伏器件的方法
US9324898B2 (en) 2012-09-25 2016-04-26 Alliance For Sustainable Energy, Llc Varying cadmium telluride growth temperature during deposition to increase solar cell reliability
US20140374266A1 (en) * 2012-12-28 2014-12-25 First Solar, Inc. Method and apparatus for forming a cadmium zinc telluride layer in a photovoltaic device
WO2015095607A1 (en) * 2013-12-20 2015-06-25 Uriel Solar, Inc. Multi-junction photovoltaic cells
CN104064618A (zh) * 2014-05-16 2014-09-24 中国科学院电工研究所 一种p-i-n结构CdTe电池及其制备方法
CN104746143A (zh) * 2015-03-05 2015-07-01 中国电子科技集团公司第十一研究所 一种硅基碲化锌缓冲层分子束外延工艺方法
US9287439B1 (en) * 2015-04-16 2016-03-15 China Triumph International Engineering Co., Ltd. Method of conditioning the CdTe layer of CdTe thin-film solar cells
CN106206244A (zh) * 2015-04-29 2016-12-07 中国建材国际工程集团有限公司 对CdTe薄层太阳能电池的CdTe层进行调理的方法
CN106057931B (zh) * 2016-07-05 2023-07-07 安阳师范学院 一种大开路电压纳米异质结太阳能电池及制备方法
AU2017343630B2 (en) * 2016-10-12 2021-08-05 First Solar, Inc. Photovoltaic device with transparent tunnel junction
JP6776456B2 (ja) * 2017-02-27 2020-10-28 ファースト・ソーラー・インコーポレーテッド 第ｖ族ドープのための薄膜積層体、それを含む光起電力素子、および薄膜積層体を有する光起電力素子を形成する方法
CN108933172B (zh) * 2017-05-24 2020-05-15 清华大学 半导体元件
CN108963003B (zh) * 2017-05-24 2020-06-09 清华大学 太阳能电池
CN114388656B (zh) * 2021-12-29 2024-04-26 中国建材国际工程集团有限公司 一种CdTe发电玻璃及其制造方法

Family Cites Families (56)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2929859A (en) * 1957-03-12 1960-03-22 Rca Corp Semiconductor devices
US4260427A (en) * 1979-06-18 1981-04-07 Ametek, Inc. CdTe Schottky barrier photovoltaic cell
EP0049286B1 (de) * 1980-04-10 1988-03-02 Massachusetts Institute Of Technology Verfahren zur herstellung von blättern aus kristallinem material und aus diesen erzeugte vorrichtungen
US4292092A (en) * 1980-06-02 1981-09-29 Rca Corporation Laser processing technique for fabricating series-connected and tandem junction series-connected solar cells into a solar battery
US4536607A (en) * 1984-03-01 1985-08-20 Wiesmann Harold J Photovoltaic tandem cell
US4680422A (en) * 1985-10-30 1987-07-14 The Boeing Company Two-terminal, thin film, tandem solar cells
US4706604A (en) * 1986-06-09 1987-11-17 Honeywell Inc. Wipe-off apparatus of liquid phase epitaxy of mercury cadmium telluride
US4710589A (en) * 1986-10-21 1987-12-01 Ametek, Inc. Heterojunction p-i-n photovoltaic cell
US4977097A (en) * 1986-10-21 1990-12-11 Ametek, Inc. Method of making heterojunction P-I-N photovoltaic cell
US4753684A (en) * 1986-10-31 1988-06-28 The Standard Oil Company Photovoltaic heterojunction structures
EP0369666B1 (de) * 1988-11-16 1995-06-14 Mitsubishi Denki Kabushiki Kaisha Sonnenzelle
US5028561A (en) * 1989-06-15 1991-07-02 Hughes Aircraft Company Method of growing p-type group II-VI material
US4999694A (en) * 1989-08-18 1991-03-12 At&T Bell Laboratories Photodiode
US5248631A (en) * 1990-08-24 1993-09-28 Minnesota Mining And Manufacturing Company Doping of iib-via semiconductors during molecular beam epitaxy using neutral free radicals
US5393675A (en) * 1993-05-10 1995-02-28 The University Of Toledo Process for RF sputtering of cadmium telluride photovoltaic cell
US5477809A (en) * 1993-06-23 1995-12-26 Nec Corporation Method of growth of CdTe on silicon by molecular beam epitaxy
US5738731A (en) * 1993-11-19 1998-04-14 Mega Chips Corporation Photovoltaic device
JPH07147422A (ja) * 1993-11-26 1995-06-06 Sumitomo Metal Mining Co Ltd テルル化カドミウム太陽電池
JP3271225B2 (ja) * 1994-05-31 2002-04-02 ソニー株式会社 Ｉｉ−ｖｉ族化合物半導体の成長方法
JPH08107068A (ja) * 1994-10-03 1996-04-23 Nec Corp ＭＢＥ法によるＳｉ基板上ＣｄＴｅ成長方法
JPH0997803A (ja) * 1995-09-29 1997-04-08 Sony Corp カドミウムを含むｉｉ−ｖｉ族化合物半導体層およびその成長方法
JPH09237907A (ja) * 1996-02-28 1997-09-09 Nippon Telegr & Teleph Corp <Ntt> 太陽光発電装置
JPH10303445A (ja) * 1997-04-28 1998-11-13 Matsushita Denchi Kogyo Kk ＣｄＴｅ膜の製造方法とそれを用いた太陽電池
US5898662A (en) * 1996-11-11 1999-04-27 Sony Corporation Semiconductor light emitting device, its manufacturing method and optical recording and/or reproducing apparatus
US5909632A (en) * 1997-09-25 1999-06-01 Midwest Research Institute Use of separate ZnTe interface layers to form OHMIC contacts to p-CdTe films
US6255708B1 (en) * 1997-10-10 2001-07-03 Rengarajan Sudharsanan Semiconductor P-I-N detector
JPH11204834A (ja) * 1997-11-14 1999-07-30 Sony Corp 半導体発光素子の製造方法
US6380480B1 (en) * 1999-05-18 2002-04-30 Nippon Sheet Glass Co., Ltd Photoelectric conversion device and substrate for photoelectric conversion device
WO2000077861A1 (en) * 1999-06-14 2000-12-21 Augusto Carlos J R P Stacked wavelength-selective opto-electronic device
US7442953B2 (en) * 1999-06-14 2008-10-28 Quantum Semiconductor Llc Wavelength selective photonics device
US6274804B1 (en) * 1999-07-28 2001-08-14 Angewandte Solarenergie - Ase Gmbh Thin-film solar module
US6852614B1 (en) * 2000-03-24 2005-02-08 University Of Maine Method of manufacturing semiconductor having group II-group VI compounds doped with nitrogen
JP3717372B2 (ja) * 2000-05-15 2005-11-16 シャープ株式会社 太陽電池モジュール
US6548751B2 (en) * 2000-12-12 2003-04-15 Solarflex Technologies, Inc. Thin film flexible solar cell
US6657194B2 (en) * 2001-04-13 2003-12-02 Epir Technologies, Inc. Multispectral monolithic infrared focal plane array detectors
JP4162447B2 (ja) * 2001-09-28 2008-10-08 三洋電機株式会社 光起電力素子及び光起電力装置
US6759312B2 (en) * 2001-10-16 2004-07-06 The Regents Of The University Of California Co-implantation of group VI elements and N for formation of non-alloyed ohmic contacts for n-type semiconductors
JP4074763B2 (ja) * 2002-01-22 2008-04-09 シャープ株式会社 太陽電池の製造方法
US7141863B1 (en) * 2002-11-27 2006-11-28 University Of Toledo Method of making diode structures
WO2004054003A1 (en) * 2002-12-05 2004-06-24 Blue Photonics, Inc. High efficiency, monolithic multijunction solar cells containing lattice-mismatched materials and methods of forming same
WO2005006393A2 (en) * 2003-05-27 2005-01-20 Triton Systems, Inc. Pinhold porosity free insulating films on flexible metallic substrates for thin film applications
DE10326547A1 (de) * 2003-06-12 2005-01-05 Siemens Ag Tandemsolarzelle mit einer gemeinsamen organischen Elektrode
EP1730788A1 (de) * 2004-02-24 2006-12-13 BP Corporation North America Inc. Prozess zur herstellung photovoltaischer zellen
US7518207B1 (en) * 2004-03-19 2009-04-14 The United States Of America As Represented By The Secretary Of The Navy Molecular beam epitaxy growth of ternary and quaternary metal chalcogenide films
WO2006015185A2 (en) * 2004-07-30 2006-02-09 Aonex Technologies, Inc. GaInP/GaAs/Si TRIPLE JUNCTION SOLAR CELL ENABLED BY WAFER BONDING AND LAYER TRANSFER
US8115093B2 (en) * 2005-02-15 2012-02-14 General Electric Company Layer-to-layer interconnects for photoelectric devices and methods of fabricating the same
US20070277874A1 (en) * 2006-05-31 2007-12-06 David Francis Dawson-Elli Thin film photovoltaic structure
US20070277875A1 (en) * 2006-05-31 2007-12-06 Kishor Purushottam Gadkaree Thin film photovoltaic structure
US20080023059A1 (en) * 2006-07-25 2008-01-31 Basol Bulent M Tandem solar cell structures and methods of manufacturing same
US8525021B2 (en) * 2007-09-25 2013-09-03 First Solar, Inc. Photovoltaic devices including heterojunctions
US20090173373A1 (en) * 2008-01-07 2009-07-09 Wladyslaw Walukiewicz Group III-Nitride Solar Cell with Graded Compositions
WO2009117072A1 (en) * 2008-03-18 2009-09-24 Solexant Corp. Improved back contact in thin solar cells
CN101276854B (zh) * 2008-05-09 2010-06-09 上海太阳能电池研究与发展中心 碲锌镉薄膜太阳能电池
US8093094B2 (en) * 2008-06-12 2012-01-10 The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration Blocking contacts for N-type cadmium zinc telluride
US8664524B2 (en) * 2008-07-17 2014-03-04 Uriel Solar, Inc. High power efficiency, large substrate, polycrystalline CdTe thin film semiconductor photovoltaic cell structures grown by molecular beam epitaxy at high deposition rate for use in solar electricity generation
US8912428B2 (en) * 2008-10-22 2014-12-16 Epir Technologies, Inc. High efficiency multijunction II-VI photovoltaic solar cells

Also Published As

Publication number Publication date
JP5813654B2 (ja) 2015-11-17
WO2011072269A3 (en) 2011-11-17
US20110139249A1 (en) 2011-06-16
CN102714252A (zh) 2012-10-03
CA2780175A1 (en) 2011-06-16
BR112012012383A2 (pt) 2019-09-24
EP2481094A2 (de) 2012-08-01
EP2481094A4 (de) 2017-08-09
WO2011072269A2 (en) 2011-06-16
JP2013513953A (ja) 2013-04-22

Similar Documents

Publication Publication Date Title
IN2012DN03272A (de)
WO2010009436A3 (en) Photovoltaic cell structures and corresponding processes
MY173413A (en) High-efficiency solar photovoltaic cells and modules using thin crystalline semiconductor absorbers
EP2510551A4 (de) Hocheffiziente photovoltaische rückseitenkontaktstrukturen für solarzellen und herstellungsverfahren dafür mithilfe dünner planarer halbleiter
WO2010120233A3 (en) Multi-junction photovoltaic cell with nanowires
EP2909866A4 (de) Systeme und verfahren für monolithisch integrierte bypass-schaltungen in fotovoltaischen solarzellen und modulen
WO2011112765A3 (en) Flexible solar cell interconnection systems and methods
WO2009091773A3 (en) Solar concentrator and devices and methods using them
WO2010093695A3 (en) Thin-film photovoltaic power system with integrated low-profile high-efficiency inverter
WO2010048543A3 (en) Thin absorber layer of a photovoltaic device
WO2011143222A3 (en) Bifacial thin film solar panel and methods for producing the same
WO2013158177A3 (en) Multi-crystalline ii-vi based multijunction solar cells
GB201205738D0 (en) Photovoltaic thermal hybrid solar receivers
WO2012075482A3 (en) Method and apparatus for applying an electric field to a photovoltaic element
WO2013070454A3 (en) Apparatus and methods for enhancing photovoltaic efficiency
WO2012030701A3 (en) Photovoltaic device interconnect
GB201008697D0 (en) Photovoltaic modules
EP3770973A4 (de) Solarzelle, mehrfachsolarzelle, solarzellenmodul und fotovoltaisches solarstromerzeugungssystem
WO2012006130A3 (en) High performance multi-layer back contact stack for silicon solar cells
WO2012009010A3 (en) Energy storage device with large charge separation
EP3355364A4 (de) Solarzelle mit hoher effizienz der photovoltaischen konversion, verfahren zur herstellung davon, solarzellenmodul und system zur photovoltaischen stromerzeugung
WO2012166749A3 (en) Ion implantation and annealing for high efficiency back-contact back-junction solar cells
GB201304484D0 (en) Silicon wafer coated with a passivation layer
WO2011083994A3 (ko) 태양광 발전장치
WO2011011301A3 (en) A mixed silicon phase film for high efficiency thin film silicon solar cells