WO2011083994A3 - 태양광 발전장치 - Google Patents
태양광 발전장치 Download PDFInfo
- Publication number
- WO2011083994A3 WO2011083994A3 PCT/KR2011/000092 KR2011000092W WO2011083994A3 WO 2011083994 A3 WO2011083994 A3 WO 2011083994A3 KR 2011000092 W KR2011000092 W KR 2011000092W WO 2011083994 A3 WO2011083994 A3 WO 2011083994A3
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- photovoltaic device
- solar photovoltaic
- solar cell
- solar
- disclosed
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
- H01L31/072—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type
- H01L31/0749—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type including a AIBIIICVI compound, e.g. CdS/CulnSe2 [CIS] heterojunction solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
- H01L31/0264—Inorganic materials
- H01L31/032—Inorganic materials including, apart from doping materials or other impurities, only compounds not provided for in groups H01L31/0272 - H01L31/0312
- H01L31/0322—Inorganic materials including, apart from doping materials or other impurities, only compounds not provided for in groups H01L31/0272 - H01L31/0312 comprising only AIBIIICVI chalcopyrite compounds, e.g. Cu In Se2, Cu Ga Se2, Cu In Ga Se2
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/036—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes
- H01L31/0392—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate
- H01L31/03923—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate including AIBIIICVI compound materials, e.g. CIS, CIGS
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/036—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes
- H01L31/0392—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate
- H01L31/03926—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate comprising a flexible substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/036—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes
- H01L31/0392—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate
- H01L31/03926—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate comprising a flexible substrate
- H01L31/03928—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate comprising a flexible substrate including AIBIIICVI compound, e.g. CIS, CIGS deposited on metal or polymer foils
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
- H01L31/0445—PV modules or arrays of single PV cells including thin film solar cells, e.g. single thin film a-Si, CIS or CdTe solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
- H01L31/05—Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells
- H01L31/0504—Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells specially adapted for series or parallel connection of solar cells in a module
- H01L31/0512—Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells specially adapted for series or parallel connection of solar cells in a module made of a particular material or composition of materials
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/541—CuInSe2 material PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Landscapes
- Engineering & Computer Science (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Chemical & Material Sciences (AREA)
- Life Sciences & Earth Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Sustainable Development (AREA)
- Sustainable Energy (AREA)
- Inorganic Chemistry (AREA)
- Photovoltaic Devices (AREA)
Abstract
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2012547963A JP2013516783A (ja) | 2010-01-06 | 2011-01-06 | 太陽光発電装置 |
EP11731932.7A EP2437310A4 (en) | 2010-01-06 | 2011-01-06 | SOLAR PHOTOVOLTAIC DEVICE |
CN2011800055812A CN102844878A (zh) | 2010-01-06 | 2011-01-06 | 太阳能电池设备 |
US13/381,150 US20120260966A1 (en) | 2010-01-06 | 2011-01-06 | Solar cell apparatus |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR10-2010-0000995 | 2010-01-06 | ||
KR1020100000995A KR101114169B1 (ko) | 2010-01-06 | 2010-01-06 | 태양광 발전장치 |
Publications (2)
Publication Number | Publication Date |
---|---|
WO2011083994A2 WO2011083994A2 (ko) | 2011-07-14 |
WO2011083994A3 true WO2011083994A3 (ko) | 2011-11-10 |
Family
ID=44305957
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/KR2011/000092 WO2011083994A2 (ko) | 2010-01-06 | 2011-01-06 | 태양광 발전장치 |
Country Status (6)
Country | Link |
---|---|
US (1) | US20120260966A1 (ko) |
EP (1) | EP2437310A4 (ko) |
JP (1) | JP2013516783A (ko) |
KR (1) | KR101114169B1 (ko) |
CN (1) | CN102844878A (ko) |
WO (1) | WO2011083994A2 (ko) |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TWI488318B (zh) * | 2011-07-29 | 2015-06-11 | Thin film solar cell module | |
KR101405639B1 (ko) * | 2012-07-27 | 2014-06-11 | 엘지이노텍 주식회사 | 태양전지 및 이의 제조 방법 |
DE102012024754A1 (de) | 2012-12-18 | 2014-06-18 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Dünnschichtsolarzellenanordnung sowie Verfahren zu deren Herstellung |
KR102470791B1 (ko) * | 2017-12-07 | 2022-11-28 | 상라오 징코 솔라 테크놀러지 디벨롭먼트 컴퍼니, 리미티드 | 태양 전지 패널 |
CN108470783B (zh) * | 2018-03-28 | 2020-12-01 | 京东方科技集团股份有限公司 | 感光元件及其制造方法、显示面板及其制造方法 |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20070004593A (ko) * | 2003-12-25 | 2007-01-09 | 쇼와쉘세키유가부시키가이샤 | 집적형 박막 태양 전지 및 이의 제조방법 |
KR100785730B1 (ko) * | 2006-06-22 | 2007-12-18 | 이병수 | 금속 접합을 갖는 태양전지 모듈 |
JP2009130193A (ja) * | 2007-11-26 | 2009-06-11 | Toyota Motor Corp | 太陽電池モジュール |
Family Cites Families (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5997770A (en) * | 1998-03-05 | 1999-12-07 | Conpoly Technology Co., Ltd. | Process for doping polyaniline powder |
US6239352B1 (en) * | 1999-03-30 | 2001-05-29 | Daniel Luch | Substrate and collector grid structures for electrically interconnecting photovoltaic arrays and process of manufacture of such arrays |
JP2002064062A (ja) * | 2000-08-17 | 2002-02-28 | Honda Motor Co Ltd | 化合物半導体の成膜方法 |
JP4288641B2 (ja) * | 2000-08-17 | 2009-07-01 | 本田技研工業株式会社 | 化合物半導体成膜装置 |
US7829781B2 (en) * | 2004-06-01 | 2010-11-09 | Konarka Technologies, Inc. | Photovoltaic module architecture |
WO2007002683A2 (en) * | 2005-06-27 | 2007-01-04 | E. I. Du Pont De Nemours And Company | Electrically conductive polymer compositions |
US8222511B2 (en) * | 2006-08-03 | 2012-07-17 | Gentherm | Thermoelectric device |
CA2684535C (en) * | 2007-04-18 | 2017-03-14 | Nanoco Technologies Limited | Fabrication of electrically active films based on multiple layers |
DE102007052971A1 (de) * | 2007-11-07 | 2009-06-10 | Solarion Ag | Kontaktierung und Modulverschaltung von Dünnschichtsolarzellen auf polymeren Trägern |
-
2010
- 2010-01-06 KR KR1020100000995A patent/KR101114169B1/ko not_active IP Right Cessation
-
2011
- 2011-01-06 JP JP2012547963A patent/JP2013516783A/ja active Pending
- 2011-01-06 WO PCT/KR2011/000092 patent/WO2011083994A2/ko active Application Filing
- 2011-01-06 CN CN2011800055812A patent/CN102844878A/zh active Pending
- 2011-01-06 EP EP11731932.7A patent/EP2437310A4/en not_active Withdrawn
- 2011-01-06 US US13/381,150 patent/US20120260966A1/en not_active Abandoned
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20070004593A (ko) * | 2003-12-25 | 2007-01-09 | 쇼와쉘세키유가부시키가이샤 | 집적형 박막 태양 전지 및 이의 제조방법 |
KR100785730B1 (ko) * | 2006-06-22 | 2007-12-18 | 이병수 | 금속 접합을 갖는 태양전지 모듈 |
JP2009130193A (ja) * | 2007-11-26 | 2009-06-11 | Toyota Motor Corp | 太陽電池モジュール |
Non-Patent Citations (1)
Title |
---|
See also references of EP2437310A4 * |
Also Published As
Publication number | Publication date |
---|---|
JP2013516783A (ja) | 2013-05-13 |
CN102844878A (zh) | 2012-12-26 |
US20120260966A1 (en) | 2012-10-18 |
EP2437310A4 (en) | 2014-04-02 |
EP2437310A1 (en) | 2012-04-04 |
WO2011083994A2 (ko) | 2011-07-14 |
KR101114169B1 (ko) | 2012-02-22 |
KR20110080663A (ko) | 2011-07-13 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
EP2648224A4 (en) | Solar battery cell and solar battery module | |
EP2400557A4 (en) | Solar cell and solar cell module | |
EP2461367A4 (en) | Solar cell module | |
EP2650923A4 (en) | Solar cell and solar-cell module | |
EP2637217A4 (en) | SOLAR CELL ENCAPSULATION MATERIAL AND SOLAR CELL MODULE | |
EP2650926A4 (en) | Solar cell and solar-cell module | |
EP2669966A4 (en) | PHOTOELECTRIC CONVERSION ELEMENT, SOLAR CELL AND SOLAR CELL MODULE | |
EP2562811A4 (en) | Power module and power conversion device provided with said power module | |
EP2669953A4 (en) | Solar cell and solar cell module | |
WO2012134807A3 (en) | Graphene-based multi-junctions flexible solar cell | |
EP2469604A4 (en) | Solar battery, solar battery module and solar battery system | |
EP2669954A4 (en) | Solar cell and solar cell module | |
EP2403004A4 (en) | Solar cell | |
EP2600419A4 (en) | Solar cell module | |
EP2525437A4 (en) | Wet-type solar battery and wet-type solar battery module | |
EP2426727A4 (en) | Solar battery device, and solar battery module using the same | |
EP2400560A4 (en) | Solar battery module | |
WO2011040784A3 (ko) | 태양광 발전장치 | |
EP2371011A4 (en) | Solar cell | |
EP2660872A4 (en) | Solar cell and solar cell module | |
EP2581981A4 (en) | Wet-type solar cell and wet-type solar cell module | |
EP2612371A4 (en) | PHOTOVOLTAIC CONNECTION BOX FOR A SOLAR CELL | |
EP2423976A4 (en) | Solar photovoltaic device | |
EP2506312A4 (en) | Solar cell | |
WO2011083994A3 (ko) | 태양광 발전장치 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
WWE | Wipo information: entry into national phase |
Ref document number: 201180005581.2 Country of ref document: CN |
|
121 | Ep: the epo has been informed by wipo that ep was designated in this application |
Ref document number: 11731932 Country of ref document: EP Kind code of ref document: A1 |
|
WWE | Wipo information: entry into national phase |
Ref document number: 2011731932 Country of ref document: EP |
|
WWE | Wipo information: entry into national phase |
Ref document number: 13381150 Country of ref document: US |
|
WWE | Wipo information: entry into national phase |
Ref document number: 2012547963 Country of ref document: JP |
|
NENP | Non-entry into the national phase |
Ref country code: DE |