IN2012DN02513A - - Google Patents
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- Publication number
- IN2012DN02513A IN2012DN02513A IN2513DEN2012A IN2012DN02513A IN 2012DN02513 A IN2012DN02513 A IN 2012DN02513A IN 2513DEN2012 A IN2513DEN2012 A IN 2513DEN2012A IN 2012DN02513 A IN2012DN02513 A IN 2012DN02513A
- Authority
- IN
- India
Links
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/0203—Particular design considerations for integrated circuits
- H01L27/0207—Geometrical layout of the components, e.g. computer aided design; custom LSI, semi-custom LSI, standard cell technique
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
- H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
- H01L21/8232—Field-effect technology
- H01L21/8234—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
- H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
- H01L21/8232—Field-effect technology
- H01L21/8234—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type
- H01L21/823437—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type with a particular manufacturing method of the gate conductors, e.g. particular materials, shapes
- H01L21/823456—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type with a particular manufacturing method of the gate conductors, e.g. particular materials, shapes gate conductors with different shapes, lengths or dimensions
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
- H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
- H01L21/8232—Field-effect technology
- H01L21/8234—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type
- H01L21/823475—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type interconnection or wiring or contact manufacturing related aspects
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/482—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body
- H01L23/485—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body consisting of layered constructions comprising conductive layers and insulating layers, e.g. planar contacts
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
- H01L27/085—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
- H01L27/088—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
- H01L29/42312—Gate electrodes for field effect devices
- H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
- H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
- H01L29/42372—Gate electrodes for field effect devices for field-effect transistors with insulated gate characterised by the conducting layer, e.g. the length, the sectional shape or the lay-out
- H01L29/4238—Gate electrodes for field effect devices for field-effect transistors with insulated gate characterised by the conducting layer, e.g. the length, the sectional shape or the lay-out characterised by the surface lay-out
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
- H01L21/76895—Local interconnects; Local pads, as exemplified by patent document EP0896365
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Ceramic Engineering (AREA)
- General Engineering & Computer Science (AREA)
- Design And Manufacture Of Integrated Circuits (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Electrodes Of Semiconductors (AREA)
- Semiconductor Integrated Circuits (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US12/551,019 US8258578B2 (en) | 2009-08-31 | 2009-08-31 | Handshake structure for improving layout density |
PCT/US2010/046254 WO2011025718A1 (en) | 2009-08-31 | 2010-08-21 | Semiconductor device |
Publications (1)
Publication Number | Publication Date |
---|---|
IN2012DN02513A true IN2012DN02513A (zh) | 2015-08-28 |
Family
ID=43012627
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
IN2513DEN2012 IN2012DN02513A (zh) | 2009-08-31 | 2012-03-22 |
Country Status (7)
Country | Link |
---|---|
US (1) | US8258578B2 (zh) |
EP (1) | EP2474032A1 (zh) |
JP (2) | JP2013503499A (zh) |
KR (1) | KR101647082B1 (zh) |
CN (1) | CN102648521B (zh) |
IN (1) | IN2012DN02513A (zh) |
WO (1) | WO2011025718A1 (zh) |
Families Citing this family (16)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR101865840B1 (ko) * | 2011-08-10 | 2018-06-08 | 삼성전자주식회사 | 반도체 소자 |
US8741763B2 (en) * | 2012-05-07 | 2014-06-03 | Globalfoundries Inc. | Layout designs with via routing structures |
US8987128B2 (en) * | 2012-07-30 | 2015-03-24 | Globalfoundries Inc. | Cross-coupling based design using diffusion contact structures |
US8872241B1 (en) | 2013-05-20 | 2014-10-28 | International Business Machines Corporation | Multi-direction wiring for replacement gate lines |
US9397218B2 (en) * | 2014-01-09 | 2016-07-19 | Marvell World Trade Ltd. | Method and apparatus for mitigating effects of parasitic capacitance in semiconductor devices |
US9704862B2 (en) | 2014-09-18 | 2017-07-11 | Samsung Electronics Co., Ltd. | Semiconductor devices and methods for manufacturing the same |
US10095825B2 (en) | 2014-09-18 | 2018-10-09 | Samsung Electronics Co., Ltd. | Computer based system for verifying layout of semiconductor device and layout verify method thereof |
US9811626B2 (en) | 2014-09-18 | 2017-11-07 | Samsung Electronics Co., Ltd. | Method of designing layout of semiconductor device |
US9767248B2 (en) | 2014-09-18 | 2017-09-19 | Samsung Electronics, Co., Ltd. | Semiconductor having cross coupled structure and layout verification method thereof |
US10026661B2 (en) | 2014-09-18 | 2018-07-17 | Samsung Electronics Co., Ltd. | Semiconductor device for testing large number of devices and composing method and test method thereof |
US9589955B2 (en) | 2014-10-01 | 2017-03-07 | Samsung Electronics Co., Ltd. | System on chip |
KR102288869B1 (ko) | 2014-10-01 | 2021-08-10 | 삼성전자주식회사 | 시스템 온 칩 |
KR102254031B1 (ko) | 2014-10-10 | 2021-05-20 | 삼성전자주식회사 | 반도체 소자 및 이의 제조 방법 |
KR102307207B1 (ko) * | 2015-03-25 | 2021-10-05 | 삼성전자주식회사 | 전계 효과 트랜지스터를 포함하는 반도체 소자 |
KR102318410B1 (ko) * | 2015-04-01 | 2021-10-28 | 삼성전자주식회사 | 반도체 소자 및 이의 제조 방법 |
KR102633138B1 (ko) | 2016-10-17 | 2024-02-02 | 삼성전자주식회사 | 집적 회로 및 반도체 장치 |
Family Cites Families (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3795634B2 (ja) * | 1996-06-19 | 2006-07-12 | 株式会社東芝 | 半導体装置の製造方法 |
JPH1065027A (ja) | 1996-08-21 | 1998-03-06 | Ricoh Co Ltd | 半導体不揮発性記憶装置 |
JPH11233628A (ja) * | 1998-02-16 | 1999-08-27 | Mitsubishi Electric Corp | コンタクト構造の製造方法 |
JP3544126B2 (ja) | 1998-10-15 | 2004-07-21 | 株式会社東芝 | 半導体装置の製造方法及び半導体装置 |
JP2005327898A (ja) | 2004-05-14 | 2005-11-24 | Fujitsu Ltd | 半導体装置及びその製造方法 |
KR100583964B1 (ko) | 2004-12-27 | 2006-05-26 | 삼성전자주식회사 | 도드라진 셀 랜딩패드를 갖는 반도체소자 및 그 제조방법 |
JP2006253461A (ja) | 2005-03-11 | 2006-09-21 | Toshiba Corp | 半導体集積回路装置およびその製造方法 |
US7312490B2 (en) * | 2005-03-31 | 2007-12-25 | Intel Corporation | Vertical memory device and method |
TWI305675B (en) * | 2006-04-03 | 2009-01-21 | Nanya Technology Corp | Semiconductor device and fabrication thereof |
TW201007885A (en) * | 2008-07-18 | 2010-02-16 | Nec Electronics Corp | Manufacturing method of semiconductor device, and semiconductor device |
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2009
- 2009-08-31 US US12/551,019 patent/US8258578B2/en active Active
-
2010
- 2010-08-21 KR KR1020127008416A patent/KR101647082B1/ko active IP Right Grant
- 2010-08-21 WO PCT/US2010/046254 patent/WO2011025718A1/en active Application Filing
- 2010-08-21 CN CN201080046074.9A patent/CN102648521B/zh active Active
- 2010-08-21 EP EP10748185A patent/EP2474032A1/en not_active Withdrawn
- 2010-08-21 JP JP2012527900A patent/JP2013503499A/ja active Pending
-
2012
- 2012-03-22 IN IN2513DEN2012 patent/IN2012DN02513A/en unknown
-
2015
- 2015-07-01 JP JP2015132868A patent/JP5957127B2/ja active Active
Also Published As
Publication number | Publication date |
---|---|
KR101647082B1 (ko) | 2016-08-09 |
JP2015213187A (ja) | 2015-11-26 |
CN102648521A (zh) | 2012-08-22 |
US20110049635A1 (en) | 2011-03-03 |
JP5957127B2 (ja) | 2016-07-27 |
KR20120068895A (ko) | 2012-06-27 |
EP2474032A1 (en) | 2012-07-11 |
CN102648521B (zh) | 2015-12-09 |
WO2011025718A1 (en) | 2011-03-03 |
JP2013503499A (ja) | 2013-01-31 |
US8258578B2 (en) | 2012-09-04 |