IN192584B - - Google Patents

Info

Publication number
IN192584B
IN192584B IN1666CA1998A IN192584B IN 192584 B IN192584 B IN 192584B IN 1666CA1998 A IN1666CA1998 A IN 1666CA1998A IN 192584 B IN192584 B IN 192584B
Authority
IN
India
Application number
Other languages
English (en)
Inventor
Bruce Kane
Original Assignee
Unisearch Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Unisearch Ltd filed Critical Unisearch Ltd
Publication of IN192584B publication Critical patent/IN192584B/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/7613—Single electron transistors; Coulomb blockade devices
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06N—COMPUTING ARRANGEMENTS BASED ON SPECIFIC COMPUTATIONAL MODELS
    • G06N10/00—Quantum computing, i.e. information processing based on quantum-mechanical phenomena
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/775—Field effect transistors with one dimensional charge carrier gas channel, e.g. quantum wire FET
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S977/00—Nanotechnology
    • Y10S977/902—Specified use of nanostructure
    • Y10S977/932—Specified use of nanostructure for electronic or optoelectronic application
    • Y10S977/933—Spintronics or quantum computing

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Theoretical Computer Science (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Nanotechnology (AREA)
  • Ceramic Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Chemical & Material Sciences (AREA)
  • Mathematical Physics (AREA)
  • Evolutionary Computation (AREA)
  • Pure & Applied Mathematics (AREA)
  • Computational Mathematics (AREA)
  • Data Mining & Analysis (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Mathematical Analysis (AREA)
  • Mathematical Optimization (AREA)
  • Artificial Intelligence (AREA)
  • Computing Systems (AREA)
  • General Engineering & Computer Science (AREA)
  • Software Systems (AREA)
  • Junction Field-Effect Transistors (AREA)
  • Hall/Mr Elements (AREA)
  • Superconductor Devices And Manufacturing Methods Thereof (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
IN1666CA1998 1997-09-17 1998-09-17 IN192584B (xx)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
AUPO9268A AUPO926897A0 (en) 1997-09-17 1997-09-17 Quantum computer

Publications (1)

Publication Number Publication Date
IN192584B true IN192584B (xx) 2004-05-08

Family

ID=3803551

Family Applications (1)

Application Number Title Priority Date Filing Date
IN1666CA1998 IN192584B (xx) 1997-09-17 1998-09-17

Country Status (12)

Country Link
US (2) US6369404B1 (xx)
EP (2) EP1025449A4 (xx)
JP (2) JP4819994B2 (xx)
KR (2) KR20010030601A (xx)
CN (2) CN1135700C (xx)
AU (1) AUPO926897A0 (xx)
CA (2) CA2304045A1 (xx)
IL (2) IL135062A0 (xx)
IN (1) IN192584B (xx)
TW (2) TW423046B (xx)
WO (2) WO1999014614A1 (xx)
ZA (2) ZA988528B (xx)

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AU2001263762A1 (en) * 2000-05-02 2001-11-12 Hahn-Meitner-Institut Berlin Gmbh Molecular arrangement with a structural configuration and use thereof for quantum-mechanical information processing
AUPQ975900A0 (en) * 2000-08-30 2000-09-21 Unisearch Limited A process for the fabrication of a quantum computer
CA2460349A1 (en) * 2001-07-11 2003-02-06 Daniel Kilbank System and method for compressing data
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AUPR728901A0 (en) * 2001-08-27 2001-09-20 Unisearch Limited Method and system for introducing an ion into a substrate
CN1545485A (zh) * 2001-08-27 2004-11-10 I 在用于量子计算机的硅晶体中的替代的施主原子
US7291891B2 (en) 2001-12-06 2007-11-06 Japan Science And Technology Agency In-solid nuclear spin quantum calculation device
US20090182542A9 (en) * 2001-12-22 2009-07-16 Hilton Jeremy P Hybrid classical-quantum computer architecture for molecular modeling
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KR100997699B1 (ko) * 2002-03-05 2010-12-02 가부시키가이샤 한도오따이 에네루기 켄큐쇼 트랜지스터
WO2003091842A2 (en) * 2002-04-23 2003-11-06 Daniel Kilbank System and method for using microlets in communications
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AU2003259762A1 (en) * 2002-08-10 2004-02-25 Routt, Thomas J Methods for transmitting data across quantum interfaces and quantum gates using same
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US7364923B2 (en) * 2003-03-03 2008-04-29 The Governing Council Of The University Of Toronto Dressed qubits
US7408486B2 (en) * 2003-04-21 2008-08-05 Qbit Corporation System and method for using a microlet-based modem
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US7216038B2 (en) * 2003-09-11 2007-05-08 Franco Vitaliano Quantum information processing elements and quantum information processing platforms using such elements
US7219017B2 (en) * 2003-09-11 2007-05-15 Franco Vitaliano Quantum information processing elements and quantum information processing platforms using such elements
US7219018B2 (en) * 2003-09-11 2007-05-15 Franco Vitaliano Quantum information processing elements and quantum information processing platforms using such elements
US7321884B2 (en) * 2004-02-23 2008-01-22 International Business Machines Corporation Method and structure to isolate a qubit from the environment
US7135697B2 (en) * 2004-02-25 2006-11-14 Wisconsin Alumni Research Foundation Spin readout and initialization in semiconductor quantum dots
US20070239366A1 (en) * 2004-06-05 2007-10-11 Hilton Jeremy P Hybrid classical-quantum computer architecture for molecular modeling
CA2570354C (en) * 2004-06-15 2014-05-20 National Research Council Of Canada Voltage-controlled computing element for quantum computer
US20060007025A1 (en) * 2004-07-08 2006-01-12 Manish Sharma Device and method for encoding data, and a device and method for decoding data
JP2006261610A (ja) * 2005-03-18 2006-09-28 Hokkaido Univ 核スピンメモリセルおよび情報処理回路
KR20060080134A (ko) * 2006-02-28 2006-07-07 안도열 실리콘 전자구조의 계곡축퇴를 이용한 양자비트 구현방법
US7875876B1 (en) 2006-06-15 2011-01-25 Hrl Laboratories, Llc Scalable quantum computer
CN102530856B (zh) * 2006-12-20 2016-12-14 复旦大学附属中山医院 氧化还原纳米药物量子点构成室温超导量子比特网络的方法
US7985965B2 (en) * 2007-03-29 2011-07-26 Raytheon Company Quantum computing device and method including qubit arrays of entangled states using negative refractive index lenses
US7790051B1 (en) 2007-10-31 2010-09-07 Sandia Corporation Isolating and moving single atoms using silicon nanocrystals
US8507894B2 (en) * 2008-02-11 2013-08-13 Qucor Pty Limited Control and readout of electron or hole spin
JP5513507B2 (ja) * 2008-09-03 2014-06-04 ディー−ウェイブ システムズ，インコーポレイテッド 量子プロセッサ素子の能動的補償のためのシステム、方法および装置
US11235062B2 (en) * 2009-03-06 2022-02-01 Metaqor Llc Dynamic bio-nanoparticle elements
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US8816325B2 (en) * 2011-10-07 2014-08-26 The Regents Of The University Of California Scalable quantum computer architecture with coupled donor-quantum dot qubits
CN102779288B (zh) * 2012-06-26 2015-09-30 中国矿业大学 一种基于场理论的本体分析方法
CN103512653B (zh) * 2012-06-29 2016-12-21 新昌县冠阳技术开发有限公司 一种可测量反射光的光自旋霍尔效应的装置
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WO2014146162A1 (en) * 2013-03-20 2014-09-25 Newsouth Innovations Pry Limited Quantum computing with acceptor-based qubits
WO2015118579A1 (ja) * 2014-02-10 2015-08-13 独立行政法人理化学研究所 スキルミオンの駆動方法
JP2017515195A (ja) * 2014-03-12 2017-06-08 テンポラル ディフェンス システムズ， エルエルシー 断熱量子計算を介してデジタル論理制約問題を解く
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US10636955B2 (en) * 2016-05-20 2020-04-28 Arizona Board Of Regents On Behalf Of The University Of Arizona Terahertz transistor
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Also Published As

Publication number Publication date
CA2304045A1 (en) 1999-03-25
EP1025449A4 (en) 2003-04-02
JP4819994B2 (ja) 2011-11-24
JP4819993B2 (ja) 2011-11-24
TW423046B (en) 2001-02-21
ZA988528B (en) 1999-03-18
EP1016216A1 (en) 2000-07-05
EP1016216A4 (en) 2002-05-08
KR20010030600A (ko) 2001-04-16
IL135062A0 (en) 2001-05-20
JP2001516962A (ja) 2001-10-02
US6472681B1 (en) 2002-10-29
CN1270674A (zh) 2000-10-18
CN1132016C (zh) 2003-12-24
TW423028B (en) 2001-02-21
KR20010030601A (ko) 2001-04-16
AUPO926897A0 (en) 1997-10-09
IL134920A (en) 2003-11-23
IL134920A0 (en) 2001-05-20
EP1025449A1 (en) 2000-08-09
ZA988530B (en) 1999-03-18
CA2304185A1 (en) 1999-03-25
CN1278967A (zh) 2001-01-03
WO1999014858A1 (en) 1999-03-25
US6369404B1 (en) 2002-04-09
JP2001516974A (ja) 2001-10-02
WO1999014614A1 (en) 1999-03-25
CN1135700C (zh) 2004-01-21

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