CN1270674A - 用于单电子和核的自旋测量的电子设备 - Google Patents
用于单电子和核的自旋测量的电子设备 Download PDFInfo
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- CN1270674A CN1270674A CN98809240A CN98809240A CN1270674A CN 1270674 A CN1270674 A CN 1270674A CN 98809240 A CN98809240 A CN 98809240A CN 98809240 A CN98809240 A CN 98809240A CN 1270674 A CN1270674 A CN 1270674A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/7613—Single electron transistors; Coulomb blockade devices
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
-
- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06N—COMPUTING ARRANGEMENTS BASED ON SPECIFIC COMPUTATIONAL MODELS
- G06N10/00—Quantum computing, i.e. information processing based on quantum-mechanical phenomena
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/775—Field effect transistors with one dimensional charge carrier gas channel, e.g. quantum wire FET
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S977/00—Nanotechnology
- Y10S977/902—Specified use of nanostructure
- Y10S977/932—Specified use of nanostructure for electronic or optoelectronic application
- Y10S977/933—Spintronics or quantum computing
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Theoretical Computer Science (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Nanotechnology (AREA)
- Ceramic Engineering (AREA)
- Computer Hardware Design (AREA)
- Chemical & Material Sciences (AREA)
- Mathematical Physics (AREA)
- Evolutionary Computation (AREA)
- Pure & Applied Mathematics (AREA)
- Computational Mathematics (AREA)
- Data Mining & Analysis (AREA)
- Crystallography & Structural Chemistry (AREA)
- Mathematical Analysis (AREA)
- Mathematical Optimization (AREA)
- Artificial Intelligence (AREA)
- Computing Systems (AREA)
- General Engineering & Computer Science (AREA)
- Software Systems (AREA)
- Junction Field-Effect Transistors (AREA)
- Hall/Mr Elements (AREA)
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Abstract
Description
Claims (26)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
AUPO9268 | 1997-09-17 | ||
AUPO9268A AUPO926897A0 (en) | 1997-09-17 | 1997-09-17 | Quantum computer |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1270674A true CN1270674A (zh) | 2000-10-18 |
CN1132016C CN1132016C (zh) | 2003-12-24 |
Family
ID=3803551
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN988092409A Expired - Fee Related CN1132016C (zh) | 1997-09-17 | 1998-09-17 | 用于单电子和核的自旋测量的电子设备 |
CNB988111659A Expired - Fee Related CN1135700C (zh) | 1997-09-17 | 1998-09-17 | 量子计算机、初始化方法及测试核自旋的方法 |
Family Applications After (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CNB988111659A Expired - Fee Related CN1135700C (zh) | 1997-09-17 | 1998-09-17 | 量子计算机、初始化方法及测试核自旋的方法 |
Country Status (12)
Country | Link |
---|---|
US (2) | US6472681B1 (zh) |
EP (2) | EP1016216A4 (zh) |
JP (2) | JP4819993B2 (zh) |
KR (2) | KR20010030600A (zh) |
CN (2) | CN1132016C (zh) |
AU (1) | AUPO926897A0 (zh) |
CA (2) | CA2304185A1 (zh) |
IL (2) | IL135062A0 (zh) |
IN (1) | IN192584B (zh) |
TW (2) | TW423046B (zh) |
WO (2) | WO1999014858A1 (zh) |
ZA (2) | ZA988528B (zh) |
Cited By (9)
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CN102530856A (zh) * | 2006-12-20 | 2012-07-04 | 复旦大学附属中山医院 | 氧化还原纳米药物量子点构成室温超导量子比特网络的方法 |
CN103512653A (zh) * | 2012-06-29 | 2014-01-15 | 新昌县冠阳技术开发有限公司 | 一种可测量反射光的光自旋霍尔效应的装置 |
CN107807342A (zh) * | 2017-10-31 | 2018-03-16 | 国网安徽省电力公司电力科学研究院 | 用于电流互感器的绝缘缺陷检测装置及方法 |
CN108698815A (zh) * | 2016-01-15 | 2018-10-23 | 耶鲁大学 | 用于操纵双量子位量子态的技术及相关系统和方法 |
US20200259067A1 (en) * | 2016-05-20 | 2020-08-13 | Arizona Board Of Regents On Behalf Of University Of Arizona | Terahertz transistor |
CN113030144A (zh) * | 2019-12-09 | 2021-06-25 | 华东师范大学 | 利用核自旋单态实现对目标物进行磁共振成像的方法及应用 |
CN113030145A (zh) * | 2019-12-09 | 2021-06-25 | 华东师范大学 | 利用核自旋单态选择性检测目标物的方法 |
US11737376B2 (en) | 2017-12-11 | 2023-08-22 | Yale University | Superconducting nonlinear asymmetric inductive element and related systems and methods |
US11791818B2 (en) | 2019-01-17 | 2023-10-17 | Yale University | Josephson nonlinear circuit |
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JP2000137007A (ja) * | 1998-08-26 | 2000-05-16 | Canon Inc | 状態構成方法及びその装置、並びにこれを用いた通信方法及びその装置 |
US6988058B1 (en) * | 1998-12-16 | 2006-01-17 | The Regents Of The University Of California | Quantum computation with quantum dots and terahertz cavity quantum electrodynamics |
WO2001010027A1 (es) * | 1999-07-30 | 2001-02-08 | Javier Tejada Palacios | Computador cuantico basado en qubits magneticos |
EP1077492B1 (en) * | 1999-08-19 | 2006-10-11 | Hitachi Europe Limited | Photo-detector |
JP3427179B2 (ja) * | 2000-02-16 | 2003-07-14 | 東北大学長 | 核スピン制御素子及びその制御方法 |
DE10123132A1 (de) * | 2000-05-02 | 2001-11-22 | Hahn Meitner Inst Berlin Gmbh | Molekulare Anordnung mit einer Strukturausbildung und deren Anwendung für quantenmechanische Informationsverarbeitung |
AUPQ975900A0 (en) * | 2000-08-30 | 2000-09-21 | Unisearch Limited | A process for the fabrication of a quantum computer |
CA2460349A1 (en) * | 2001-07-11 | 2003-02-06 | Daniel Kilbank | System and method for compressing data |
EP1286303A1 (en) * | 2001-08-13 | 2003-02-26 | Hitachi Europe Limited | Quantum computer |
EP1421025A1 (en) * | 2001-08-27 | 2004-05-26 | Unisearch Limited | Substituted donor atoms in silicon crystal for quantum computer |
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JP4088927B2 (ja) * | 2001-12-06 | 2008-05-21 | 独立行政法人科学技術振興機構 | 固体中核スピン量子演算素子 |
US20090182542A9 (en) * | 2001-12-22 | 2009-07-16 | Hilton Jeremy P | Hybrid classical-quantum computer architecture for molecular modeling |
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US7321884B2 (en) * | 2004-02-23 | 2008-01-22 | International Business Machines Corporation | Method and structure to isolate a qubit from the environment |
US7135697B2 (en) * | 2004-02-25 | 2006-11-14 | Wisconsin Alumni Research Foundation | Spin readout and initialization in semiconductor quantum dots |
US20070239366A1 (en) * | 2004-06-05 | 2007-10-11 | Hilton Jeremy P | Hybrid classical-quantum computer architecture for molecular modeling |
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US20060007025A1 (en) * | 2004-07-08 | 2006-01-12 | Manish Sharma | Device and method for encoding data, and a device and method for decoding data |
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US5940193A (en) * | 1997-03-26 | 1999-08-17 | The United States Of America As Represented By The Secretary Of The Air Force | General purpose quantum computing |
JP3028072B2 (ja) * | 1997-05-13 | 2000-04-04 | 日本電気株式会社 | 磁場検出素子 |
WO1998059255A1 (en) * | 1997-06-24 | 1998-12-30 | California Institute Of Technology | A method for suppressing noise in measurements |
US6218832B1 (en) * | 1999-02-16 | 2001-04-17 | International Business Machines Corporation | Nuclear magnetic resonance quantum computing method with improved solvents |
-
1997
- 1997-09-17 AU AUPO9268A patent/AUPO926897A0/en not_active Abandoned
-
1998
- 1998-09-17 CN CN988092409A patent/CN1132016C/zh not_active Expired - Fee Related
- 1998-09-17 JP JP2000512096A patent/JP4819993B2/ja not_active Expired - Fee Related
- 1998-09-17 ZA ZA988528A patent/ZA988528B/xx unknown
- 1998-09-17 WO PCT/AU1998/000777 patent/WO1999014858A1/en active IP Right Grant
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- 1998-09-17 CA CA002304045A patent/CA2304045A1/en not_active Abandoned
- 1998-09-17 EP EP98943573A patent/EP1016216A4/en not_active Withdrawn
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Cited By (10)
Publication number | Priority date | Publication date | Assignee | Title |
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CN102530856A (zh) * | 2006-12-20 | 2012-07-04 | 复旦大学附属中山医院 | 氧化还原纳米药物量子点构成室温超导量子比特网络的方法 |
CN103512653A (zh) * | 2012-06-29 | 2014-01-15 | 新昌县冠阳技术开发有限公司 | 一种可测量反射光的光自旋霍尔效应的装置 |
CN103512653B (zh) * | 2012-06-29 | 2016-12-21 | 新昌县冠阳技术开发有限公司 | 一种可测量反射光的光自旋霍尔效应的装置 |
CN108698815A (zh) * | 2016-01-15 | 2018-10-23 | 耶鲁大学 | 用于操纵双量子位量子态的技术及相关系统和方法 |
US20200259067A1 (en) * | 2016-05-20 | 2020-08-13 | Arizona Board Of Regents On Behalf Of University Of Arizona | Terahertz transistor |
CN107807342A (zh) * | 2017-10-31 | 2018-03-16 | 国网安徽省电力公司电力科学研究院 | 用于电流互感器的绝缘缺陷检测装置及方法 |
US11737376B2 (en) | 2017-12-11 | 2023-08-22 | Yale University | Superconducting nonlinear asymmetric inductive element and related systems and methods |
US11791818B2 (en) | 2019-01-17 | 2023-10-17 | Yale University | Josephson nonlinear circuit |
CN113030144A (zh) * | 2019-12-09 | 2021-06-25 | 华东师范大学 | 利用核自旋单态实现对目标物进行磁共振成像的方法及应用 |
CN113030145A (zh) * | 2019-12-09 | 2021-06-25 | 华东师范大学 | 利用核自旋单态选择性检测目标物的方法 |
Also Published As
Publication number | Publication date |
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JP4819994B2 (ja) | 2011-11-24 |
CN1135700C (zh) | 2004-01-21 |
CN1278967A (zh) | 2001-01-03 |
KR20010030601A (ko) | 2001-04-16 |
US6369404B1 (en) | 2002-04-09 |
JP4819993B2 (ja) | 2011-11-24 |
JP2001516974A (ja) | 2001-10-02 |
US6472681B1 (en) | 2002-10-29 |
IL135062A0 (en) | 2001-05-20 |
JP2001516962A (ja) | 2001-10-02 |
AUPO926897A0 (en) | 1997-10-09 |
IN192584B (zh) | 2004-05-08 |
TW423046B (en) | 2001-02-21 |
CA2304185A1 (en) | 1999-03-25 |
WO1999014614A1 (en) | 1999-03-25 |
ZA988530B (en) | 1999-03-18 |
EP1025449A1 (en) | 2000-08-09 |
ZA988528B (en) | 1999-03-18 |
EP1016216A4 (en) | 2002-05-08 |
EP1025449A4 (en) | 2003-04-02 |
WO1999014858A1 (en) | 1999-03-25 |
KR20010030600A (ko) | 2001-04-16 |
TW423028B (en) | 2001-02-21 |
CA2304045A1 (en) | 1999-03-25 |
IL134920A0 (en) | 2001-05-20 |
EP1016216A1 (en) | 2000-07-05 |
IL134920A (en) | 2003-11-23 |
CN1132016C (zh) | 2003-12-24 |
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