ATE342584T1 - Photodetektor - Google Patents

Photodetektor

Info

Publication number
ATE342584T1
ATE342584T1 AT99306531T AT99306531T ATE342584T1 AT E342584 T1 ATE342584 T1 AT E342584T1 AT 99306531 T AT99306531 T AT 99306531T AT 99306531 T AT99306531 T AT 99306531T AT E342584 T1 ATE342584 T1 AT E342584T1
Authority
AT
Austria
Prior art keywords
photo
individual
electrons
incident photons
single electron
Prior art date
Application number
AT99306531T
Other languages
English (en)
Inventor
David Arfon Williams
Albert Heberle
Jeremy Allam
Original Assignee
Hitachi Europ Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Europ Ltd filed Critical Hitachi Europ Ltd
Application granted granted Critical
Publication of ATE342584T1 publication Critical patent/ATE342584T1/de

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
    • H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
    • H01L31/112—Devices sensitive to infrared, visible or ultraviolet radiation characterised by field-effect operation, e.g. junction field-effect phototransistor
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y15/00—Nanotechnology for interacting, sensing or actuating, e.g. quantum dots as markers in protein assays or molecular motors
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • General Health & Medical Sciences (AREA)
  • Molecular Biology (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Health & Medical Sciences (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Light Receiving Elements (AREA)
  • Optical Head (AREA)
  • Measuring Fluid Pressure (AREA)
  • Surgical Instruments (AREA)
  • Photometry And Measurement Of Optical Pulse Characteristics (AREA)
  • Solid State Image Pick-Up Elements (AREA)
AT99306531T 1999-08-19 1999-08-19 Photodetektor ATE342584T1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
EP99306531A EP1077492B1 (de) 1999-08-19 1999-08-19 Photodetektor

Publications (1)

Publication Number Publication Date
ATE342584T1 true ATE342584T1 (de) 2006-11-15

Family

ID=8241586

Family Applications (1)

Application Number Title Priority Date Filing Date
AT99306531T ATE342584T1 (de) 1999-08-19 1999-08-19 Photodetektor

Country Status (5)

Country Link
US (1) US6455872B1 (de)
EP (1) EP1077492B1 (de)
JP (1) JP2001060699A (de)
AT (1) ATE342584T1 (de)
DE (1) DE69933556T2 (de)

Families Citing this family (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4029420B2 (ja) * 1999-07-15 2008-01-09 独立行政法人科学技術振興機構 ミリ波・遠赤外光検出器
FR2839388A1 (fr) * 2002-05-03 2003-11-07 St Microelectronics Sa Procede d'emission d'un photon unique, dispositif semiconducteur et procede de fabrication correspondant
GB0306447D0 (en) * 2003-03-20 2003-04-23 Univ Cambridge Tech Photon detector
US7705306B2 (en) * 2004-07-09 2010-04-27 Japan Science And Technology Agency Infrared photodetector
US7545999B2 (en) * 2005-11-01 2009-06-09 Hewlett-Packard Development Company, L.P. Photonic configuration
US20110042324A1 (en) * 2007-02-02 2011-02-24 Matthew Hughes System and method for water restoration
US7550079B2 (en) * 2007-02-02 2009-06-23 Matthew Hughes System and method for water restoration
JP5240748B2 (ja) * 2007-02-19 2013-07-17 独立行政法人科学技術振興機構 赤外光検出器
US7843030B2 (en) * 2007-03-22 2010-11-30 Ranbir Singh Method, apparatus, material, and system of using a high gain avalanche photodetector transistor
EP2224497A1 (de) 2009-02-27 2010-09-01 Hitachi Ltd. Photodetektor beruhend auf der Detektion von Phononen
US9349970B2 (en) 2009-09-29 2016-05-24 Research Triangle Institute Quantum dot-fullerene junction based photodetectors
DK2483926T3 (en) 2009-09-29 2019-03-25 Res Triangle Inst Optoelectronic devices with quantum dot-fullerene transition
US9054262B2 (en) 2009-09-29 2015-06-09 Research Triangle Institute Integrated optical upconversion devices and related methods
EP2309562B1 (de) * 2009-10-12 2012-12-05 Hitachi Ltd. Ladungsträgervorrichtung
US8816325B2 (en) * 2011-10-07 2014-08-26 The Regents Of The University Of California Scalable quantum computer architecture with coupled donor-quantum dot qubits
KR101518242B1 (ko) * 2014-01-16 2015-05-12 한국과학기술연구원 상온에서 이용 가능한 단일 광자 검출장치 및 그 방법
US11164966B2 (en) * 2016-09-30 2021-11-02 Intel Corporation Single electron transistors (SETs) and set-based qubit-detector arrangements
CN106384756B (zh) * 2016-10-19 2017-10-13 中国人民解放军国防科学技术大学 基于石墨烯量子点的THz单光子探测器及其制备方法

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58135922A (ja) * 1982-02-08 1983-08-12 Sanyo Electric Co Ltd 温度補償型光検出器
AUPO926897A0 (en) * 1997-09-17 1997-10-09 Unisearch Limited Quantum computer

Also Published As

Publication number Publication date
US6455872B1 (en) 2002-09-24
DE69933556D1 (de) 2006-11-23
JP2001060699A (ja) 2001-03-06
EP1077492A1 (de) 2001-02-21
DE69933556T2 (de) 2007-08-30
EP1077492B1 (de) 2006-10-11

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Legal Events

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