IN191530B - - Google Patents

Info

Publication number
IN191530B
IN191530B IN35CA1997A IN191530B IN 191530 B IN191530 B IN 191530B IN 35CA1997 A IN35CA1997 A IN 35CA1997A IN 191530 B IN191530 B IN 191530B
Authority
IN
India
Prior art keywords
substrate
transistors
negative voltage
high negative
virtue
Prior art date
Application number
Other languages
English (en)
Inventor
Christl Lauterbach
Werner Dr Weber
Original Assignee
Siemens Ag
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens Ag filed Critical Siemens Ag
Publication of IN191530B publication Critical patent/IN191530B/en

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C5/00—Details of stores covered by group G11C11/00
    • G11C5/14—Power supply arrangements, e.g. power down, chip selection or deselection, layout of wirings or power grids, or multiple supply levels
    • G11C5/145—Applications of charge pumps; Boosted voltage circuits; Clamp circuits therefor
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/30—Power supply circuits

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Dc-Dc Converters (AREA)
  • Read Only Memory (AREA)
  • Non-Volatile Memory (AREA)
  • Measurement Of Current Or Voltage (AREA)
  • Semiconductor Integrated Circuits (AREA)
IN35CA1997 1996-01-16 1997-01-07 IN191530B (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE19601369A DE19601369C1 (de) 1996-01-16 1996-01-16 Vorrichtung zur Spannungsvervielfachung, insb. verwendbar zur Erzeugung der Löschspannung für ein EEPROM

Publications (1)

Publication Number Publication Date
IN191530B true IN191530B (zh) 2003-12-06

Family

ID=7782884

Family Applications (1)

Application Number Title Priority Date Filing Date
IN35CA1997 IN191530B (zh) 1996-01-16 1997-01-07

Country Status (11)

Country Link
EP (1) EP0875063B1 (zh)
JP (1) JP3154727B2 (zh)
KR (1) KR100397078B1 (zh)
CN (1) CN1106647C (zh)
AT (1) ATE181172T1 (zh)
DE (2) DE19601369C1 (zh)
ES (1) ES2135270T3 (zh)
IN (1) IN191530B (zh)
RU (1) RU2159472C2 (zh)
UA (1) UA44823C2 (zh)
WO (1) WO1997026657A1 (zh)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6130574A (en) * 1997-01-24 2000-10-10 Siemens Aktiengesellschaft Circuit configuration for producing negative voltages, charge pump having at least two circuit configurations and method of operating a charge pump
KR100466198B1 (ko) * 1997-12-12 2005-04-08 주식회사 하이닉스반도체 승압회로
JP4393182B2 (ja) 2003-05-19 2010-01-06 三菱電機株式会社 電圧発生回路
DE102005033003A1 (de) * 2005-07-14 2007-01-25 Infineon Technologies Ag Integrierte Schaltungsanordnung zur Potenzialerhöhung
US7855591B2 (en) * 2006-06-07 2010-12-21 Atmel Corporation Method and system for providing a charge pump very low voltage applications
CN101662208B (zh) * 2008-08-26 2013-10-30 天利半导体（深圳）有限公司 一种实现正负高压的电荷泵电路
US20130257522A1 (en) * 2012-03-30 2013-10-03 Tyler Daigle High input voltage charge pump
US9766171B2 (en) 2014-03-17 2017-09-19 Columbia Insurance Company Devices, systems and method for flooring performance testing
RU2762290C9 (ru) * 2020-11-30 2022-01-31 Федеральное Государственное Бюджетное Образовательное Учреждение Высшего Образования "Новосибирский Государственный Технический Университет" Инвертирующий повышающий преобразователь постоянного напряжения

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5077691A (en) * 1989-10-23 1991-12-31 Advanced Micro Devices, Inc. Flash EEPROM array with negative gate voltage erase operation
KR920006991A (ko) * 1990-09-25 1992-04-28 김광호 반도체메모리 장치의 고전압발생회로

Also Published As

Publication number Publication date
EP0875063B1 (de) 1999-06-09
CN1207824A (zh) 1999-02-10
ES2135270T3 (es) 1999-10-16
RU2159472C2 (ru) 2000-11-20
KR19990077291A (ko) 1999-10-25
KR100397078B1 (ko) 2003-10-17
JPH11503261A (ja) 1999-03-23
DE19601369C1 (de) 1997-04-10
ATE181172T1 (de) 1999-06-15
JP3154727B2 (ja) 2001-04-09
EP0875063A1 (de) 1998-11-04
UA44823C2 (uk) 2002-03-15
CN1106647C (zh) 2003-04-23
DE59602202D1 (de) 1999-07-15
WO1997026657A1 (de) 1997-07-24

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