TW366491B - Semiconductor IC and the microcomputer - Google Patents

Semiconductor IC and the microcomputer

Info

Publication number
TW366491B
TW366491B TW086119778A TW86119778A TW366491B TW 366491 B TW366491 B TW 366491B TW 086119778 A TW086119778 A TW 086119778A TW 86119778 A TW86119778 A TW 86119778A TW 366491 B TW366491 B TW 366491B
Authority
TW
Taiwan
Prior art keywords
voltage
power supply
microcomputer
supply voltage
vfixb
Prior art date
Application number
TW086119778A
Other languages
Chinese (zh)
Inventor
Eiichi Ishikawa
Yasuyuki Saito
Narihisa Satou
Naoki Yada
Kiyoshi Matsubara
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Application granted granted Critical
Publication of TW366491B publication Critical patent/TW366491B/en

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/10—Programming or data input circuits
    • G11C16/12—Programming voltage switching circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/10—Programming or data input circuits
    • G11C16/14—Circuits for erasing electrically, e.g. erase voltage switching circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/26—Sensing or reading circuits; Data output circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/30—Power supply circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C5/00—Details of stores covered by group G11C11/00
    • G11C5/14—Power supply arrangements, e.g. power down, chip selection or deselection, layout of wirings or power grids, or multiple supply levels
    • G11C5/147—Voltage reference generators, voltage or current regulators; Internally lowered supply levels; Compensation for voltage drops

Landscapes

  • Read Only Memory (AREA)
  • Microcomputers (AREA)

Abstract

The present invention relates to a semiconductor IC and the microcomputer, a microcomputer with a built-in flash memory, for writing and erasing in a built-in flash memory in a wider external power supply voltage range including low-voltage actions. That is to say, to produce voltage of minimum dependence on power supply voltage (VfixB) by means of basic circuit voltage using the clamping means (44) and within the acceptable range, the voltage level being clamped as a voltage lower than the external single power supply voltage (VCC), thus, by using the surge voltage (writing in and erasing voltage) voltage surge means (45-48) working on clamping voltage (VfixB) without depending on the external power supply voltage (VCC).
TW086119778A 1997-01-31 1997-12-26 Semiconductor IC and the microcomputer TW366491B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP01841397A JP3831040B2 (en) 1997-01-31 1997-01-31 Semiconductor integrated circuit

Publications (1)

Publication Number Publication Date
TW366491B true TW366491B (en) 1999-08-11

Family

ID=11970979

Family Applications (1)

Application Number Title Priority Date Filing Date
TW086119778A TW366491B (en) 1997-01-31 1997-12-26 Semiconductor IC and the microcomputer

Country Status (3)

Country Link
JP (1) JP3831040B2 (en)
KR (2) KR100528423B1 (en)
TW (1) TW366491B (en)

Families Citing this family (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100338953B1 (en) * 1999-12-29 2002-05-31 박종섭 High voltage generation circuit
JP2002025272A (en) * 2000-07-10 2002-01-25 Sharp Corp Semiconductor storage device and its evaluating method
JP4043703B2 (en) 2000-09-04 2008-02-06 株式会社ルネサステクノロジ Semiconductor device, microcomputer, and flash memory
JP2002216498A (en) * 2001-01-18 2002-08-02 Rohm Co Ltd Ferroelectric memory device
JP2002358795A (en) * 2001-05-31 2002-12-13 Hitachi Ltd Non-volatile semiconductor storage device and manufacturing method
JPWO2003073430A1 (en) 2002-02-28 2005-06-23 株式会社ルネサステクノロジ Nonvolatile semiconductor memory device
KR100506191B1 (en) * 2002-07-08 2005-08-04 주식회사 하이닉스반도체 Circuit for generating a trim bit signal in a flash memory device
JP4118623B2 (en) * 2002-07-23 2008-07-16 松下電器産業株式会社 Nonvolatile semiconductor memory device
JP4257196B2 (en) 2003-12-25 2009-04-22 株式会社東芝 Semiconductor device and driving method of semiconductor device
JP2005235315A (en) 2004-02-19 2005-09-02 Elpida Memory Inc Boosting circuit
JP4488800B2 (en) * 2004-06-14 2010-06-23 株式会社ルネサステクノロジ Semiconductor integrated circuit device
DE102005037409A1 (en) * 2004-08-09 2006-03-30 International Rectifier Corp., El Segundo Start-up switch to provide a start-up voltage to an application circuit
JP4994815B2 (en) * 2006-12-06 2012-08-08 三星電子株式会社 Method for setting erase voltage of nonvolatile semiconductor memory device
JP2009303317A (en) * 2008-06-11 2009-12-24 Ricoh Co Ltd Reference voltage generating circuit and dc-dc converter with that reference voltage generating circuit
JP2009141960A (en) * 2008-12-03 2009-06-25 Renesas Technology Corp Semiconductor integrated circuit
WO2012001917A1 (en) 2010-06-29 2012-01-05 パナソニック株式会社 Nonvolatile storage system, power supply circuit for memory system, flash memory, flash memory controller, and nonvolatile semiconductor storage device
JP5385220B2 (en) 2010-06-30 2014-01-08 ルネサスエレクトロニクス株式会社 Nonvolatile memory, data processing apparatus, and microcomputer application system
JP5636860B2 (en) * 2010-10-14 2014-12-10 凸版印刷株式会社 Semiconductor device
JP2013211974A (en) 2012-03-30 2013-10-10 Renesas Electronics Corp Semiconductor device for battery control, and battery pack
KR102660729B1 (en) * 2016-10-28 2024-04-26 삼성전자주식회사 Nonvolatile memory device detecting power noise and operation method thereof
CN115202425B (en) * 2022-09-15 2022-11-22 成都市易冲半导体有限公司 IO (input/output) design circuit and method for detecting ultra-low power supply voltage of serial communication bus

Also Published As

Publication number Publication date
KR100528423B1 (en) 2006-06-22
KR100515541B1 (en) 2005-09-20
JPH10214496A (en) 1998-08-11
KR19980070699A (en) 1998-10-26
JP3831040B2 (en) 2006-10-11

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Legal Events

Date Code Title Description
MM4A Annulment or lapse of patent due to non-payment of fees