IN171365B - - Google Patents
Info
- Publication number
- IN171365B IN171365B IN712/DEL/87A IN712DE1987A IN171365B IN 171365 B IN171365 B IN 171365B IN 712DE1987 A IN712DE1987 A IN 712DE1987A IN 171365 B IN171365 B IN 171365B
- Authority
- IN
- India
- Prior art keywords
- conversion
- reagent
- electrode material
- proximate
- roll
- Prior art date
Links
- 238000006243 chemical reaction Methods 0.000 abstract 3
- 230000007547 defect Effects 0.000 abstract 3
- 238000000034 method Methods 0.000 abstract 3
- 239000003153 chemical reaction reagent Substances 0.000 abstract 2
- 239000007772 electrode material Substances 0.000 abstract 2
- 230000003213 activating effect Effects 0.000 abstract 1
- 238000004519 manufacturing process Methods 0.000 abstract 1
- 239000010409 thin film Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022466—Electrodes made of transparent conductive layers, e.g. TCO, ITO layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/20—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof such devices or parts thereof comprising amorphous semiconductor materials
- H01L31/208—Particular post-treatment of the devices, e.g. annealing, short-circuit elimination
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S136/00—Batteries: thermoelectric and photoelectric
- Y10S136/29—Testing, calibrating, treating, e.g. aging
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Electromagnetism (AREA)
- Manufacturing & Machinery (AREA)
- Photovoltaic Devices (AREA)
- Formation Of Insulating Films (AREA)
- Testing Of Short-Circuits, Discontinuities, Leakage, Or Incorrect Line Connections (AREA)
- Emergency Protection Circuit Devices (AREA)
- Electronic Switches (AREA)
- Thermistors And Varistors (AREA)
- Electrolytic Production Of Non-Metals, Compounds, Apparatuses Therefor (AREA)
- Fixed Capacitors And Capacitor Manufacturing Machines (AREA)
- Bipolar Transistors (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US06/907,425 US4729970A (en) | 1986-09-15 | 1986-09-15 | Conversion process for passivating short circuit current paths in semiconductor devices |
Publications (1)
Publication Number | Publication Date |
---|---|
IN171365B true IN171365B (ja) | 1992-09-26 |
Family
ID=25424075
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
IN712/DEL/87A IN171365B (ja) | 1986-09-15 | 1987-08-17 |
Country Status (8)
Country | Link |
---|---|
US (1) | US4729970A (ja) |
EP (1) | EP0260821B1 (ja) |
JP (1) | JP2674622B2 (ja) |
AT (1) | ATE78365T1 (ja) |
CA (1) | CA1264869A (ja) |
DE (1) | DE3780386T2 (ja) |
ES (1) | ES2033857T3 (ja) |
IN (1) | IN171365B (ja) |
Families Citing this family (56)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4773944A (en) * | 1987-09-08 | 1988-09-27 | Energy Conversion Devices, Inc. | Large area, low voltage, high current photovoltaic modules and method of fabricating same |
US5084400A (en) * | 1988-09-12 | 1992-01-28 | Energy Conversion Devices Inc. | Conversion process for passivating short circuit current paths in electronic devices having a metallic electrode |
US5055416A (en) * | 1988-12-07 | 1991-10-08 | Minnesota Mining And Manufacturing Company | Electrolytic etch for preventing electrical shorts in solar cells on polymer surfaces |
US5320723A (en) * | 1990-05-07 | 1994-06-14 | Canon Kabushiki Kaisha | Method of removing short-circuit portion in photoelectric conversion device |
US5176758A (en) * | 1991-05-20 | 1993-01-05 | United Solar Systems Corporation | Translucent photovoltaic sheet material and panels |
US5268039A (en) * | 1991-09-13 | 1993-12-07 | United Solar Systems Corporation | Photovoltaic device including shunt preventing layer and method for the deposition thereof |
WO1993006624A1 (en) * | 1991-09-13 | 1993-04-01 | United Solar Systems Corporation | Photovoltaic device including shunt preventing layer and method for the deposition thereof |
JP2686022B2 (ja) * | 1992-07-01 | 1997-12-08 | キヤノン株式会社 | 光起電力素子の製造方法 |
JP2915321B2 (ja) * | 1995-05-16 | 1999-07-05 | キヤノン株式会社 | 直列接続光起電力素子アレーの製造方法 |
JP3387741B2 (ja) | 1995-07-19 | 2003-03-17 | キヤノン株式会社 | 半導体素子用保護材、該保護材を有する半導体素子、該素子を有する半導体装置 |
US5769963A (en) * | 1995-08-31 | 1998-06-23 | Canon Kabushiki Kaisha | Photovoltaic device |
CN1072737C (zh) * | 1995-10-17 | 2001-10-10 | 佳能株式会社 | 刻蚀方法 |
JPH09115978A (ja) * | 1995-10-17 | 1997-05-02 | Mitsubishi Electric Corp | 半導体装置の評価方法 |
US6191353B1 (en) | 1996-01-10 | 2001-02-20 | Canon Kabushiki Kaisha | Solar cell module having a specific surface side cover excelling in moisture resistance and transparency |
US5859397A (en) * | 1996-05-17 | 1999-01-12 | Canon Kabushiki Kaisha | Process for the production of a photovoltaic element |
TW400554B (en) * | 1997-07-25 | 2000-08-01 | United Microelectronics Corp | The removing method for the thin film layer involved in the semiconductor device |
US6430810B1 (en) | 1997-10-28 | 2002-08-13 | Uniax Corporation | Mechanical scribing methods of forming a patterned metal layer in an electronic device |
AU743134B2 (en) | 1997-12-03 | 2002-01-17 | Canon Kabushiki Kaisha | Method of producing photovoltaic element |
US6414236B1 (en) | 1999-06-30 | 2002-07-02 | Canon Kabushiki Kaisha | Solar cell module |
US6882045B2 (en) * | 1999-10-28 | 2005-04-19 | Thomas J. Massingill | Multi-chip module and method for forming and method for deplating defective capacitors |
AU2003295880A1 (en) * | 2002-11-27 | 2004-06-23 | University Of Toledo, The | Integrated photoelectrochemical cell and system having a liquid electrolyte |
US7667133B2 (en) * | 2003-10-29 | 2010-02-23 | The University Of Toledo | Hybrid window layer for photovoltaic cells |
WO2005101510A2 (en) * | 2004-04-16 | 2005-10-27 | The University Of Toledo | Light-assisted electrochemical shunt passivation for photovoltaic devices |
WO2006110613A2 (en) * | 2005-04-11 | 2006-10-19 | The University Of Toledo | Integrated photovoltaic-electrolysis cell |
US7317566B2 (en) * | 2005-08-29 | 2008-01-08 | Teledyne Licensing, Llc | Electrode with transparent series resistance for uniform switching of optical modulation devices |
US7256140B2 (en) * | 2005-09-20 | 2007-08-14 | United Solar Ovonic Llc | Higher selectivity, method for passivating short circuit current paths in semiconductor devices |
US20080105293A1 (en) * | 2006-11-02 | 2008-05-08 | Guardian Industries Corp. | Front electrode for use in photovoltaic device and method of making same |
JP5135904B2 (ja) * | 2007-06-19 | 2013-02-06 | 株式会社日立製作所 | 有機薄膜トランジスタアレイおよびその製造方法 |
WO2009073501A2 (en) * | 2007-11-30 | 2009-06-11 | University Of Toledo | System for diagnosis and treatment of photovoltaic and other semiconductor devices |
WO2009120974A2 (en) * | 2008-03-28 | 2009-10-01 | University Of Toledo | System for selectively filling pin holes, weak shunts and/or scribe lines in photovoltaic devices and photovoltaic cells made thereby |
EP2159583A1 (en) * | 2008-08-29 | 2010-03-03 | ODERSUN Aktiengesellschaft | System and method for localizing and passivating defects in a photovoltaic element |
DE102008043720A1 (de) | 2008-11-13 | 2010-05-20 | Evonik Röhm Gmbh | Formmassen zur Herstellung von Solarzellenmodulen |
DE102008043707A1 (de) | 2008-11-13 | 2010-05-20 | Evonik Röhm Gmbh | Herstellung von Solarzellenmodulen |
DE102008043713A1 (de) | 2008-11-13 | 2010-05-20 | Evonik Röhm Gmbh | Herstellung von Solarzellenmodulen |
DE102008043719A1 (de) | 2008-11-13 | 2010-05-20 | Evonik Röhm Gmbh | Formmassen zur Herstellung von Solarzellenmodulen |
US8318240B2 (en) * | 2008-11-17 | 2012-11-27 | Solopower, Inc. | Method and apparatus to remove a segment of a thin film solar cell structure for efficiency improvement |
US8318239B2 (en) * | 2008-11-17 | 2012-11-27 | Solopower, Inc. | Method and apparatus for detecting and passivating defects in thin film solar cells |
US7979969B2 (en) * | 2008-11-17 | 2011-07-19 | Solopower, Inc. | Method of detecting and passivating a defect in a solar cell |
US9012766B2 (en) | 2009-11-12 | 2015-04-21 | Silevo, Inc. | Aluminum grid as backside conductor on epitaxial silicon thin film solar cells |
WO2011075579A1 (en) * | 2009-12-18 | 2011-06-23 | First Solar, Inc. | Photovoltaic device including doped layer |
BR112012029813A2 (pt) | 2010-05-26 | 2017-03-07 | Univ Toledo | estrutura de célula fotovoltaica, método para fazer uma camada de interface de dispersão de luz para uma célula fotovoltaica e estrutura de célula fotovoltaica (pv) tendo uma camada de interface de dispersão |
US9214576B2 (en) * | 2010-06-09 | 2015-12-15 | Solarcity Corporation | Transparent conducting oxide for photovoltaic devices |
DE102010030508A1 (de) | 2010-06-25 | 2011-12-29 | Evonik Röhm Gmbh | Herstellung von Solarzellenmodulen |
CN103180962B (zh) * | 2010-08-13 | 2016-05-11 | 第一太阳能有限公司 | 具有氧化物层的光伏装置 |
KR101283113B1 (ko) * | 2011-12-09 | 2013-07-05 | 엘지이노텍 주식회사 | 태양전지 모듈 및 이의 제조방법 |
US9412884B2 (en) | 2013-01-11 | 2016-08-09 | Solarcity Corporation | Module fabrication of solar cells with low resistivity electrodes |
US10074755B2 (en) | 2013-01-11 | 2018-09-11 | Tesla, Inc. | High efficiency solar panel |
US9219174B2 (en) | 2013-01-11 | 2015-12-22 | Solarcity Corporation | Module fabrication of solar cells with low resistivity electrodes |
US10309012B2 (en) | 2014-07-03 | 2019-06-04 | Tesla, Inc. | Wafer carrier for reducing contamination from carbon particles and outgassing |
US9899546B2 (en) | 2014-12-05 | 2018-02-20 | Tesla, Inc. | Photovoltaic cells with electrodes adapted to house conductive paste |
FR3037723B1 (fr) * | 2015-06-16 | 2019-07-12 | Commissariat A L'energie Atomique Et Aux Energies Alternatives | Procede de realisation d'un empilement du type premiere electrode / couche active / deuxieme electrode. |
US9761744B2 (en) | 2015-10-22 | 2017-09-12 | Tesla, Inc. | System and method for manufacturing photovoltaic structures with a metal seed layer |
US10115838B2 (en) | 2016-04-19 | 2018-10-30 | Tesla, Inc. | Photovoltaic structures with interlocking busbars |
US10672919B2 (en) | 2017-09-19 | 2020-06-02 | Tesla, Inc. | Moisture-resistant solar cells for solar roof tiles |
US11190128B2 (en) | 2018-02-27 | 2021-11-30 | Tesla, Inc. | Parallel-connected solar roof tile modules |
EP3869568A1 (en) * | 2020-02-20 | 2021-08-25 | NICE Solar Energy GmbH | Method of patterning a thin-film photovoltaic layer stack |
Family Cites Families (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS56131975A (en) * | 1980-03-19 | 1981-10-15 | Matsushita Electric Ind Co Ltd | Manufacture of solid image photographing plate |
US4640002A (en) * | 1982-02-25 | 1987-02-03 | The University Of Delaware | Method and apparatus for increasing the durability and yield of thin film photovoltaic devices |
US4451970A (en) * | 1982-10-21 | 1984-06-05 | Energy Conversion Devices, Inc. | System and method for eliminating short circuit current paths in photovoltaic devices |
DE3312053C2 (de) * | 1983-04-02 | 1985-03-28 | Nukem Gmbh, 6450 Hanau | Verfahren zum Verhindern von Kurz- oder Nebenschlüssen in einer großflächigen Dünnschicht-Solarzelle |
JPS6085578A (ja) * | 1983-10-17 | 1985-05-15 | Fuji Xerox Co Ltd | 薄膜光電変換素子の製造方法 |
JPS6085576A (ja) * | 1983-10-17 | 1985-05-15 | Fuji Xerox Co Ltd | 薄膜光電変換素子の製造方法 |
JPS614284A (ja) * | 1984-06-18 | 1986-01-10 | Matsushita Electric Ind Co Ltd | 光起電力素子の製造方法 |
JPS6258685A (ja) * | 1985-09-09 | 1987-03-14 | Fuji Electric Co Ltd | 非晶質半導体太陽電池の製造方法 |
GB8531445D0 (en) * | 1985-12-20 | 1986-02-05 | Gen Electric Co Plc | Thin films |
-
1986
- 1986-09-15 US US06/907,425 patent/US4729970A/en not_active Expired - Lifetime
-
1987
- 1987-08-14 CA CA000544602A patent/CA1264869A/en not_active Expired - Lifetime
- 1987-08-17 IN IN712/DEL/87A patent/IN171365B/en unknown
- 1987-08-20 ES ES198787307374T patent/ES2033857T3/es not_active Expired - Lifetime
- 1987-08-20 AT AT87307374T patent/ATE78365T1/de not_active IP Right Cessation
- 1987-08-20 DE DE8787307374T patent/DE3780386T2/de not_active Expired - Lifetime
- 1987-08-20 EP EP87307374A patent/EP0260821B1/en not_active Expired - Lifetime
- 1987-09-14 JP JP62230902A patent/JP2674622B2/ja not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
JPS6376442A (ja) | 1988-04-06 |
CA1264869A (en) | 1990-01-23 |
EP0260821B1 (en) | 1992-07-15 |
EP0260821A2 (en) | 1988-03-23 |
DE3780386D1 (de) | 1992-08-20 |
EP0260821A3 (en) | 1988-11-02 |
ATE78365T1 (de) | 1992-08-15 |
US4729970A (en) | 1988-03-08 |
ES2033857T3 (es) | 1993-04-01 |
DE3780386T2 (de) | 1993-01-28 |
JP2674622B2 (ja) | 1997-11-12 |
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