IN145547B - - Google Patents
Info
- Publication number
- IN145547B IN145547B IN2053/CAL/76A IN2053CA1976A IN145547B IN 145547 B IN145547 B IN 145547B IN 2053CA1976 A IN2053CA1976 A IN 2053CA1976A IN 145547 B IN145547 B IN 145547B
- Authority
- IN
- India
Links
Classifications
-
- H10P14/6309—
-
- H10P14/6322—
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US64845576A | 1976-01-12 | 1976-01-12 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| IN145547B true IN145547B (member.php) | 1978-11-04 |
Family
ID=24600841
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| IN2053/CAL/76A IN145547B (member.php) | 1976-01-12 | 1976-11-16 |
Country Status (9)
| Country | Link |
|---|---|
| JP (1) | JPS5286070A (member.php) |
| AU (1) | AU502350B2 (member.php) |
| DE (1) | DE2700094A1 (member.php) |
| FR (1) | FR2337941A1 (member.php) |
| GB (1) | GB1513640A (member.php) |
| IN (1) | IN145547B (member.php) |
| IT (1) | IT1064328B (member.php) |
| SE (1) | SE7614145L (member.php) |
| YU (1) | YU301876A (member.php) |
Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS58188162A (ja) * | 1982-04-28 | 1983-11-02 | Agency Of Ind Science & Technol | ゲ−ト絶縁膜の形成方法 |
| DE3425531A1 (de) * | 1984-07-11 | 1986-01-16 | Siemens AG, 1000 Berlin und 8000 München | Verfahren zum verfliessenlassen von dotierten sio(pfeil abwaerts)2(pfeil abwaerts)-schichten bei der herstellung von integrierten mos-halbleiterschaltungen |
| JPS61193456A (ja) * | 1985-02-21 | 1986-08-27 | Toshiba Corp | 半導体素子の製造方法 |
| NL8603111A (nl) * | 1986-12-08 | 1988-07-01 | Philips Nv | Werkwijze voor het vervaardigen van een halfgeleiderinrichting waarbij een siliciumplak aan zijn oppervlak wordt voorzien van veldoxidegebieden. |
| JP3310386B2 (ja) * | 1993-05-25 | 2002-08-05 | 忠弘 大見 | 絶縁酸化膜の形成方法及び半導体装置 |
| EP1014432A1 (en) * | 1998-12-23 | 2000-06-28 | Infineon Technologies North America Corp. | Method for forming the gate oxide of metal-oxide-semiconductor devices |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR2014382B1 (member.php) * | 1968-06-28 | 1974-03-15 | Motorola Inc | |
| JPS4913909B1 (member.php) * | 1970-05-04 | 1974-04-03 |
-
1976
- 1976-11-16 IN IN2053/CAL/76A patent/IN145547B/en unknown
- 1976-11-30 IT IT29962/76A patent/IT1064328B/it active
- 1976-12-10 YU YU03018/76A patent/YU301876A/xx unknown
- 1976-12-16 SE SE7614145A patent/SE7614145L/ not_active Application Discontinuation
- 1976-12-23 GB GB53813/76A patent/GB1513640A/en not_active Expired
-
1977
- 1977-01-04 DE DE19772700094 patent/DE2700094A1/de not_active Withdrawn
- 1977-01-06 AU AU21088/77A patent/AU502350B2/en not_active Expired
- 1977-01-11 FR FR7700611A patent/FR2337941A1/fr active Granted
- 1977-01-11 JP JP226777A patent/JPS5286070A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| AU502350B2 (en) | 1979-07-19 |
| SE7614145L (sv) | 1977-07-13 |
| YU301876A (en) | 1982-06-30 |
| JPS5286070A (en) | 1977-07-16 |
| FR2337941B1 (member.php) | 1982-05-28 |
| GB1513640A (en) | 1978-06-07 |
| AU2108877A (en) | 1978-07-13 |
| DE2700094A1 (de) | 1977-07-21 |
| IT1064328B (it) | 1985-02-18 |
| JPS5615573B2 (member.php) | 1981-04-10 |
| FR2337941A1 (fr) | 1977-08-05 |