AU2108877A - Hybrid oxide - Google Patents

Hybrid oxide

Info

Publication number
AU2108877A
AU2108877A AU21088/77A AU2108877A AU2108877A AU 2108877 A AU2108877 A AU 2108877A AU 21088/77 A AU21088/77 A AU 21088/77A AU 2108877 A AU2108877 A AU 2108877A AU 2108877 A AU2108877 A AU 2108877A
Authority
AU
Australia
Prior art keywords
hybrid oxide
hybrid
oxide
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
AU21088/77A
Other versions
AU502350B2 (en
Inventor
S. H. Fabula J. J Cohen
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
RCA Corp
Original Assignee
RCA Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by RCA Corp filed Critical RCA Corp
Publication of AU2108877A publication Critical patent/AU2108877A/en
Application granted granted Critical
Publication of AU502350B2 publication Critical patent/AU502350B2/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/02227—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process
    • H01L21/0223—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate
    • H01L21/02233—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate of the semiconductor substrate or a semiconductor layer
    • H01L21/02236—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate of the semiconductor substrate or a semiconductor layer group IV semiconductor
    • H01L21/02238—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate of the semiconductor substrate or a semiconductor layer group IV semiconductor silicon in uncombined form, i.e. pure silicon
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/02227—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process
    • H01L21/02255—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by thermal treatment

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Formation Of Insulating Films (AREA)
  • Silicon Compounds (AREA)
AU21088/77A 1976-01-12 1977-01-06 Hybrid oxide Expired AU502350B2 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US64845576A 1976-01-12 1976-01-12
USUS648455 1976-01-12

Publications (2)

Publication Number Publication Date
AU2108877A true AU2108877A (en) 1978-07-13
AU502350B2 AU502350B2 (en) 1979-07-19

Family

ID=24600841

Family Applications (1)

Application Number Title Priority Date Filing Date
AU21088/77A Expired AU502350B2 (en) 1976-01-12 1977-01-06 Hybrid oxide

Country Status (9)

Country Link
JP (1) JPS5286070A (en)
AU (1) AU502350B2 (en)
DE (1) DE2700094A1 (en)
FR (1) FR2337941A1 (en)
GB (1) GB1513640A (en)
IN (1) IN145547B (en)
IT (1) IT1064328B (en)
SE (1) SE7614145L (en)
YU (1) YU301876A (en)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58188162A (en) * 1982-04-28 1983-11-02 Agency Of Ind Science & Technol Formation of gate insulation film
DE3425531A1 (en) * 1984-07-11 1986-01-16 Siemens AG, 1000 Berlin und 8000 München Process for making doped SiO2 layers fuse in fabricating integrated MOS semiconductor circuits
JPS61193456A (en) * 1985-02-21 1986-08-27 Toshiba Corp Manufacture of semiconductor element
NL8603111A (en) * 1986-12-08 1988-07-01 Philips Nv METHOD FOR MANUFACTURING A SEMICONDUCTOR DEVICE APPLYING A SILICONE SURFACE ON ITS SURFACE WITH FIELD OXIDE AREAS.
JP3310386B2 (en) * 1993-05-25 2002-08-05 忠弘 大見 Method of forming insulating oxide film and semiconductor device
EP1014432A1 (en) * 1998-12-23 2000-06-28 Infineon Technologies North America Corp. Method for forming the gate oxide of metal-oxide-semiconductor devices

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2014382B1 (en) * 1968-06-28 1974-03-15 Motorola Inc
JPS4913909B1 (en) * 1970-05-04 1974-04-03

Also Published As

Publication number Publication date
YU301876A (en) 1982-06-30
SE7614145L (en) 1977-07-13
GB1513640A (en) 1978-06-07
IT1064328B (en) 1985-02-18
FR2337941A1 (en) 1977-08-05
IN145547B (en) 1978-11-04
FR2337941B1 (en) 1982-05-28
JPS5286070A (en) 1977-07-16
JPS5615573B2 (en) 1981-04-10
DE2700094A1 (en) 1977-07-21
AU502350B2 (en) 1979-07-19

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