JPS5286070A - Method of manufacturing concocted oxide - Google Patents

Method of manufacturing concocted oxide

Info

Publication number
JPS5286070A
JPS5286070A JP226777A JP226777A JPS5286070A JP S5286070 A JPS5286070 A JP S5286070A JP 226777 A JP226777 A JP 226777A JP 226777 A JP226777 A JP 226777A JP S5286070 A JPS5286070 A JP S5286070A
Authority
JP
Japan
Prior art keywords
concocted
oxide
manufacturing
manufacturing concocted
concocted oxide
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP226777A
Other languages
English (en)
Other versions
JPS5615573B2 (ja
Inventor
Haiman Koohen Seimoa
Jiyon Fuabuyura Jiyoozefu
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
RCA Corp
Original Assignee
RCA Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by RCA Corp filed Critical RCA Corp
Publication of JPS5286070A publication Critical patent/JPS5286070A/ja
Publication of JPS5615573B2 publication Critical patent/JPS5615573B2/ja
Granted legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104Forming layers
    • H01L21/02107Forming insulating materials on a substrate
    • H01L21/02225Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/02227Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process
    • H01L21/0223Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate
    • H01L21/02233Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate of the semiconductor substrate or a semiconductor layer
    • H01L21/02236Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate of the semiconductor substrate or a semiconductor layer group IV semiconductor
    • H01L21/02238Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate of the semiconductor substrate or a semiconductor layer group IV semiconductor silicon in uncombined form, i.e. pure silicon
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104Forming layers
    • H01L21/02107Forming insulating materials on a substrate
    • H01L21/02225Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/02227Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process
    • H01L21/02255Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by thermal treatment

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Formation Of Insulating Films (AREA)
  • Silicon Compounds (AREA)
JP226777A 1976-01-12 1977-01-11 Method of manufacturing concocted oxide Granted JPS5286070A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US64845576A 1976-01-12 1976-01-12

Publications (2)

Publication Number Publication Date
JPS5286070A true JPS5286070A (en) 1977-07-16
JPS5615573B2 JPS5615573B2 (ja) 1981-04-10

Family

ID=24600841

Family Applications (1)

Application Number Title Priority Date Filing Date
JP226777A Granted JPS5286070A (en) 1976-01-12 1977-01-11 Method of manufacturing concocted oxide

Country Status (9)

Country Link
JP (1) JPS5286070A (ja)
AU (1) AU502350B2 (ja)
DE (1) DE2700094A1 (ja)
FR (1) FR2337941A1 (ja)
GB (1) GB1513640A (ja)
IN (1) IN145547B (ja)
IT (1) IT1064328B (ja)
SE (1) SE7614145L (ja)
YU (1) YU301876A (ja)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58188162A (ja) * 1982-04-28 1983-11-02 Agency Of Ind Science & Technol ゲ−ト絶縁膜の形成方法
JPS61193456A (ja) * 1985-02-21 1986-08-27 Toshiba Corp 半導体素子の製造方法
WO1994028579A1 (fr) * 1993-05-25 1994-12-08 Tadahiro Ohmi Procede de formage d'une couche mince d'oxyde isolante et dispositif a semi-conducteur

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3425531A1 (de) * 1984-07-11 1986-01-16 Siemens AG, 1000 Berlin und 8000 München Verfahren zum verfliessenlassen von dotierten sio(pfeil abwaerts)2(pfeil abwaerts)-schichten bei der herstellung von integrierten mos-halbleiterschaltungen
NL8603111A (nl) * 1986-12-08 1988-07-01 Philips Nv Werkwijze voor het vervaardigen van een halfgeleiderinrichting waarbij een siliciumplak aan zijn oppervlak wordt voorzien van veldoxidegebieden.
EP1014432A1 (en) * 1998-12-23 2000-06-28 Infineon Technologies North America Corp. Method for forming the gate oxide of metal-oxide-semiconductor devices

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2014382B1 (ja) * 1968-06-28 1974-03-15 Motorola Inc
JPS4913909B1 (ja) * 1970-05-04 1974-04-03

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
JOURNAL OF ELECTROCHEMICAL SOCIETY#V110#M6=1963 *

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58188162A (ja) * 1982-04-28 1983-11-02 Agency Of Ind Science & Technol ゲ−ト絶縁膜の形成方法
JPS61193456A (ja) * 1985-02-21 1986-08-27 Toshiba Corp 半導体素子の製造方法
JPH0380338B2 (ja) * 1985-02-21 1991-12-24 Toshiba Kk
WO1994028579A1 (fr) * 1993-05-25 1994-12-08 Tadahiro Ohmi Procede de formage d'une couche mince d'oxyde isolante et dispositif a semi-conducteur

Also Published As

Publication number Publication date
YU301876A (en) 1982-06-30
SE7614145L (sv) 1977-07-13
GB1513640A (en) 1978-06-07
IT1064328B (it) 1985-02-18
FR2337941A1 (fr) 1977-08-05
IN145547B (ja) 1978-11-04
AU2108877A (en) 1978-07-13
FR2337941B1 (ja) 1982-05-28
JPS5615573B2 (ja) 1981-04-10
DE2700094A1 (de) 1977-07-21
AU502350B2 (en) 1979-07-19

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