IL92749A - Memory timing circuit employing models - Google Patents

Memory timing circuit employing models

Info

Publication number
IL92749A
IL92749A IL92749A IL9274989A IL92749A IL 92749 A IL92749 A IL 92749A IL 92749 A IL92749 A IL 92749A IL 9274989 A IL9274989 A IL 9274989A IL 92749 A IL92749 A IL 92749A
Authority
IL
Israel
Prior art keywords
timing circuit
circuit employing
memory timing
employing models
models
Prior art date
Application number
IL92749A
Other languages
English (en)
Other versions
IL92749A0 (en
Original Assignee
Intel Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Intel Corp filed Critical Intel Corp
Publication of IL92749A0 publication Critical patent/IL92749A0/xx
Publication of IL92749A publication Critical patent/IL92749A/xx

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/41—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
    • G11C11/413—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing, timing or power reduction
    • G11C11/417—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing, timing or power reduction for memory cells of the field-effect type
    • G11C11/418—Address circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/41—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
    • G11C11/413—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing, timing or power reduction
    • G11C11/417—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing, timing or power reduction for memory cells of the field-effect type
    • G11C11/419—Read-write [R-W] circuits

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Static Random-Access Memory (AREA)
  • Dram (AREA)
IL92749A 1988-12-27 1989-12-18 Memory timing circuit employing models IL92749A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US07/290,257 US4926387A (en) 1988-12-27 1988-12-27 Memory timing circuit employing scaled-down models of bit lines using reduced number of memory cells

Publications (2)

Publication Number Publication Date
IL92749A0 IL92749A0 (en) 1990-09-17
IL92749A true IL92749A (en) 1993-04-04

Family

ID=23115187

Family Applications (1)

Application Number Title Priority Date Filing Date
IL92749A IL92749A (en) 1988-12-27 1989-12-18 Memory timing circuit employing models

Country Status (6)

Country Link
US (1) US4926387A (xx)
JP (1) JPH02226590A (xx)
DE (1) DE3942386C2 (xx)
GB (1) GB2226900B (xx)
HK (1) HK56695A (xx)
IL (1) IL92749A (xx)

Families Citing this family (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5307356A (en) * 1990-04-16 1994-04-26 International Business Machines Corporation Interlocked on-chip ECC system
JP3135255B2 (ja) * 1990-11-14 2001-02-13 松下電器産業株式会社 デコーダ回路及び半導体記憶装置
JP2745251B2 (ja) * 1991-06-12 1998-04-28 三菱電機株式会社 半導体メモリ装置
JPH0554654A (ja) * 1991-08-27 1993-03-05 Nec Corp ダイナミツクｒａｍ
US5361370A (en) * 1991-10-24 1994-11-01 Intel Corporation Single-instruction multiple-data processor having dual-ported local memory architecture for simultaneous data transmission on local memory ports and global port
CA2122139C (en) * 1991-10-24 2000-08-29 David Leroy Sprague Data processing system
US5268863A (en) * 1992-07-06 1993-12-07 Motorola, Inc. Memory having a write enable controlled word line
JP2795074B2 (ja) * 1992-07-16 1998-09-10 日本電気株式会社 ダイナミックｒａｍ
JP2870328B2 (ja) * 1992-11-12 1999-03-17 日本電気株式会社 不揮発性半導体記憶装置
DE69229118T2 (de) * 1992-11-30 1999-08-26 Stmicroelectronics S.R.L. Generatorarchitektur für Einzeltor RAM mit Hochleistungsfähigkeit
US5485430A (en) * 1992-12-22 1996-01-16 Sgs-Thomson Microelectronics, Inc. Multiple clocked dynamic sense amplifier
KR0167235B1 (ko) * 1995-03-28 1999-02-01 문정환 메모리의 데이타 전송장치
US5875135A (en) * 1995-12-28 1999-02-23 Intel Corporation Characterization of self time circuit
US5668766A (en) * 1996-05-16 1997-09-16 Intel Corporation Method and apparatus for increasing memory read access speed using double-sensing
US6018794A (en) * 1997-04-30 2000-01-25 Arm Limited Data processing apparatus and method for generating timing signals for a self-timed circuit
US6324110B1 (en) * 1999-03-12 2001-11-27 Monolithic Systems Technology, Inc. High-speed read-write circuitry for semi-conductor memory
US6172530B1 (en) * 1999-06-18 2001-01-09 Arm Limited Decoder for generating N output signals from two or more precharged input signals
DE19963502B4 (de) * 1999-12-28 2008-01-03 Infineon Technologies Ag Schaltungsanordnung für einen integrierten Halbleiterspeicher mit Spaltenzugriff
JP4894095B2 (ja) * 2001-06-15 2012-03-07 富士通セミコンダクター株式会社 半導体記憶装置
US8525511B2 (en) * 2006-12-12 2013-09-03 Abb Technology Ag Time division multiplexed detector for a magneto-optical current transducer
US9236102B2 (en) 2012-10-12 2016-01-12 Micron Technology, Inc. Apparatuses, circuits, and methods for biasing signal lines
US9042190B2 (en) * 2013-02-25 2015-05-26 Micron Technology, Inc. Apparatuses, sense circuits, and methods for compensating for a wordline voltage increase
US9672875B2 (en) 2014-01-27 2017-06-06 Micron Technology, Inc. Methods and apparatuses for providing a program voltage responsive to a voltage determination

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5240937B2 (xx) * 1972-05-16 1977-10-15
US4223394A (en) * 1979-02-13 1980-09-16 Intel Corporation Sensing amplifier for floating gate memory devices
US4658158A (en) * 1980-07-03 1987-04-14 Xerox Corporation Voltage sense amplifier using NMOS
US4627032A (en) * 1983-11-25 1986-12-02 At&T Bell Laboratories Glitch lockout circuit for memory array
NL8602450A (nl) * 1986-09-29 1988-04-18 Philips Nv Geintegreerde geheugenschakeling met een enkelvoudige-schrijfbus circuit.
US4802122A (en) * 1987-04-28 1989-01-31 Advanced Micro Devices, Inc. Fast flush for a first-in first-out memory

Also Published As

Publication number Publication date
US4926387A (en) 1990-05-15
GB8924746D0 (en) 1989-12-20
GB2226900A (en) 1990-07-11
HK56695A (en) 1995-04-21
GB2226900B (en) 1993-09-08
JPH02226590A (ja) 1990-09-10
IL92749A0 (en) 1990-09-17
DE3942386A1 (de) 1990-07-05
DE3942386C2 (de) 2001-07-05

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Legal Events

Date Code Title Description
KB Patent renewed
KB Patent renewed
MM9K Patent not in force due to non-payment of renewal fees