IL29056A - Methods and apparatus for heating and/or coating articles - Google Patents
Methods and apparatus for heating and/or coating articlesInfo
- Publication number
- IL29056A IL29056A IL29056A IL2905667A IL29056A IL 29056 A IL29056 A IL 29056A IL 29056 A IL29056 A IL 29056A IL 2905667 A IL2905667 A IL 2905667A IL 29056 A IL29056 A IL 29056A
- Authority
- IL
- Israel
- Prior art keywords
- tha
- tho
- methods
- heating
- artioiaa
- Prior art date
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
- C30B25/12—Substrate holders or susceptors
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
- C23C16/4582—Rigid and flat substrates, e.g. plates or discs
- C23C16/4587—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially vertically
- C23C16/4588—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially vertically the substrate being rotated
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/46—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for heating the substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68771—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by supporting more than one semiconductor substrate
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US60188566A | 1966-12-15 | 1966-12-15 |
Publications (1)
Publication Number | Publication Date |
---|---|
IL29056A true IL29056A (en) | 1971-01-28 |
Family
ID=24409132
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
IL29056A IL29056A (en) | 1966-12-15 | 1967-12-03 | Methods and apparatus for heating and/or coating articles |
Country Status (9)
Country | Link |
---|---|
US (1) | US3659552A (de) |
BE (1) | BE707980A (de) |
DE (1) | DE1621394A1 (de) |
ES (1) | ES348706A1 (de) |
FR (1) | FR1561186A (de) |
GB (1) | GB1210537A (de) |
IL (1) | IL29056A (de) |
NL (1) | NL6717117A (de) |
SE (1) | SE323353B (de) |
Families Citing this family (19)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4047496A (en) * | 1974-05-31 | 1977-09-13 | Applied Materials, Inc. | Epitaxial radiation heated reactor |
US4018184A (en) * | 1975-07-28 | 1977-04-19 | Mitsubishi Denki Kabushiki Kaisha | Apparatus for treatment of semiconductor wafer |
DE2943634C2 (de) * | 1979-10-29 | 1983-09-29 | Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt | Epitaxiereaktor |
GB2135559B (en) * | 1983-02-14 | 1986-10-08 | Electricity Council | Induction heaters |
JPS60116778A (ja) * | 1983-11-23 | 1985-06-24 | ジエミニ リサーチ,インコーポレイテツド | 化学蒸着方法及び装置 |
EP0147967B1 (de) * | 1983-12-09 | 1992-08-26 | Applied Materials, Inc. | Induktiv beheitzter Reaktor zur chemischen Abscheidung aus der Dampfphase |
GB2169003B (en) * | 1984-11-16 | 1987-12-31 | Sony Corp | Chemical vapour deposition |
US4653428A (en) * | 1985-05-10 | 1987-03-31 | General Electric Company | Selective chemical vapor deposition apparatus |
US4672210A (en) * | 1985-09-03 | 1987-06-09 | Eaton Corporation | Ion implanter target chamber |
US4838983A (en) * | 1986-07-03 | 1989-06-13 | Emcore, Inc. | Gas treatment apparatus and method |
US4772356A (en) * | 1986-07-03 | 1988-09-20 | Emcore, Inc. | Gas treatment apparatus and method |
US5438181A (en) * | 1993-12-14 | 1995-08-01 | Essex Specialty Products, Inc. | Apparatus for heating substrate having electrically-conductive and non-electrically-conductive portions |
US6217662B1 (en) * | 1997-03-24 | 2001-04-17 | Cree, Inc. | Susceptor designs for silicon carbide thin films |
IL125690A0 (en) * | 1998-08-06 | 1999-04-11 | Reiser Raphael Joshua | Furnace for processing semiconductor wafers |
DE10019070A1 (de) * | 2000-04-18 | 2001-10-25 | Moeller Gmbh | Vorrichtung zum Entgasen und Verlöten von vormontierten Vakuumschaltröhren |
JP5477145B2 (ja) * | 2009-04-28 | 2014-04-23 | 三菱マテリアル株式会社 | 多結晶シリコン反応炉 |
WO2013083196A1 (en) * | 2011-12-08 | 2013-06-13 | Applied Materials, Inc. | Substrate holder for full area processing, carrier and method of processing substrates |
US8807550B2 (en) * | 2011-12-13 | 2014-08-19 | Intermolecular, Inc. | Method and apparatus for controlling force between reactor and substrate |
US9076674B2 (en) * | 2012-09-25 | 2015-07-07 | Intermolecular, Inc. | Method and apparatus for improving particle performance |
Family Cites Families (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
NL111901C (de) * | 1950-09-12 | 1900-01-01 | ||
US2767682A (en) * | 1951-03-22 | 1956-10-23 | Syntron Co | Vaporizing apparatus for producing selenium rectifiers |
US2828225A (en) * | 1954-03-01 | 1958-03-25 | Sintercast Corp America | Methods of infiltrating high melting skeleton bodies |
US2906236A (en) * | 1954-05-11 | 1959-09-29 | Syntron Co | Revolving cylindrical frame for selenium depositors |
US2885997A (en) * | 1956-02-06 | 1959-05-12 | Heraeus Gmbh W C | Vacuum coating |
US3019129A (en) * | 1959-08-10 | 1962-01-30 | Nat Res Corp | Apparatus and process for coating |
US3131098A (en) * | 1960-10-26 | 1964-04-28 | Merck & Co Inc | Epitaxial deposition on a substrate placed in a socket of the carrier member |
NL276676A (de) * | 1961-04-13 | |||
US3301213A (en) * | 1962-10-23 | 1967-01-31 | Ibm | Epitaxial reactor apparatus |
US3329524A (en) * | 1963-06-12 | 1967-07-04 | Temescal Metallurgical Corp | Centrifugal-type vapor source |
US3424629A (en) * | 1965-12-13 | 1969-01-28 | Ibm | High capacity epitaxial apparatus and method |
US3408982A (en) * | 1966-08-25 | 1968-11-05 | Emil R. Capita | Vapor plating apparatus including rotatable substrate support |
-
1966
- 1966-12-15 US US601885A patent/US3659552A/en not_active Expired - Lifetime
-
1967
- 1967-11-21 GB GB52825/67A patent/GB1210537A/en not_active Expired
- 1967-12-03 IL IL29056A patent/IL29056A/en unknown
- 1967-12-07 DE DE19671621394 patent/DE1621394A1/de active Pending
- 1967-12-14 SE SE17175/67A patent/SE323353B/xx unknown
- 1967-12-14 BE BE707980D patent/BE707980A/xx unknown
- 1967-12-14 FR FR1561186D patent/FR1561186A/fr not_active Expired
- 1967-12-15 ES ES348706A patent/ES348706A1/es not_active Expired
- 1967-12-15 NL NL6717117A patent/NL6717117A/xx unknown
Also Published As
Publication number | Publication date |
---|---|
FR1561186A (de) | 1969-03-28 |
GB1210537A (en) | 1970-10-28 |
ES348706A1 (es) | 1969-07-01 |
US3659552A (en) | 1972-05-02 |
DE1621394A1 (de) | 1971-06-03 |
SE323353B (de) | 1970-05-04 |
NL6717117A (de) | 1968-06-17 |
BE707980A (de) | 1968-04-16 |
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