IL287245B2 - Photodetector sensor arrays - Google Patents

Photodetector sensor arrays

Info

Publication number
IL287245B2
IL287245B2 IL287245A IL28724521A IL287245B2 IL 287245 B2 IL287245 B2 IL 287245B2 IL 287245 A IL287245 A IL 287245A IL 28724521 A IL28724521 A IL 28724521A IL 287245 B2 IL287245 B2 IL 287245B2
Authority
IL
Israel
Prior art keywords
light absorbing
doped
contact layer
pixel
absorbing layer
Prior art date
Application number
IL287245A
Other languages
English (en)
Hebrew (he)
Other versions
IL287245A (en
IL287245B1 (en
Original Assignee
Actlight S A
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US16/387,011 external-priority patent/US10964837B2/en
Priority claimed from US16/429,158 external-priority patent/US11114480B2/en
Application filed by Actlight S A filed Critical Actlight S A
Publication of IL287245A publication Critical patent/IL287245A/en
Publication of IL287245B1 publication Critical patent/IL287245B1/en
Publication of IL287245B2 publication Critical patent/IL287245B2/en

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/011—Manufacture or treatment of image sensors covered by group H10F39/12
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/011—Manufacture or treatment of image sensors covered by group H10F39/12
    • H10F39/024—Manufacture or treatment of image sensors covered by group H10F39/12 of coatings or optical elements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/011—Manufacture or treatment of image sensors covered by group H10F39/12
    • H10F39/026—Wafer-level processing
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
    • H10F39/182—Colour image sensors
    • H10F39/1825—Multicolour image sensors having stacked structure, e.g. NPN, NPNPN or multiple quantum well [MQW] structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/803—Pixels having integrated switching, control, storage or amplification elements
    • H10F39/8037—Pixels having integrated switching, control, storage or amplification elements the integrated elements comprising a transistor
    • H10F39/80377—Pixels having integrated switching, control, storage or amplification elements the integrated elements comprising a transistor characterised by the channel of the transistor, e.g. channel having a doping gradient
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/805—Coatings
    • H10F39/8057—Optical shielding
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/807—Pixel isolation structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/811—Interconnections

Landscapes

  • Solid State Image Pick-Up Elements (AREA)
  • Light Receiving Elements (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
IL287245A 2019-04-17 2020-04-14 Photodetector sensor arrays IL287245B2 (en)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US16/387,011 US10964837B2 (en) 2013-03-15 2019-04-17 Photo detector systems and methods of operating same
US16/429,158 US11114480B2 (en) 2013-03-15 2019-06-03 Photodetector
US16/776,572 US11251217B2 (en) 2019-04-17 2020-01-30 Photodetector sensor arrays
PCT/EP2020/060388 WO2020212305A1 (en) 2019-04-17 2020-04-14 Photodetector sensor arrays

Publications (3)

Publication Number Publication Date
IL287245A IL287245A (en) 2021-12-01
IL287245B1 IL287245B1 (en) 2025-04-01
IL287245B2 true IL287245B2 (en) 2025-08-01

Family

ID=72837083

Family Applications (1)

Application Number Title Priority Date Filing Date
IL287245A IL287245B2 (en) 2019-04-17 2020-04-14 Photodetector sensor arrays

Country Status (7)

Country Link
US (1) US11251217B2 (https=)
EP (1) EP3956929A1 (https=)
JP (1) JP7400164B2 (https=)
KR (1) KR102613379B1 (https=)
CN (1) CN113875008B (https=)
IL (1) IL287245B2 (https=)
WO (1) WO2020212305A1 (https=)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11837669B2 (en) 2013-03-15 2023-12-05 ActLight SA Photo detector systems and methods of operating same
US11114480B2 (en) 2013-03-15 2021-09-07 ActLight SA Photodetector
US11735677B2 (en) * 2020-07-20 2023-08-22 ActLight SA Photodetectors and photodetector arrays
JP7588028B2 (ja) * 2021-01-26 2024-11-21 日本ルメンタム株式会社 半導体受光素子
KR102567702B1 (ko) * 2021-06-30 2023-08-18 한국원자력연구원 방사선 검출소자 및 이의 제조방법
US12474453B2 (en) 2022-01-20 2025-11-18 ActLight SA Control techniques for photodetector systems
CN115207150B (zh) * 2022-07-21 2023-10-10 北京工业大学 一种全通信波段覆盖的高速光电探测器
US12598374B2 (en) 2023-09-27 2026-04-07 ActLight SA Techniques for minimizing power consumption in photodetector measurements

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Also Published As

Publication number Publication date
IL287245A (en) 2021-12-01
US11251217B2 (en) 2022-02-15
IL287245B1 (en) 2025-04-01
EP3956929A1 (en) 2022-02-23
CN113875008A (zh) 2021-12-31
KR20220016822A (ko) 2022-02-10
US20200373346A1 (en) 2020-11-26
CN113875008B (zh) 2025-08-05
WO2020212305A1 (en) 2020-10-22
JP7400164B2 (ja) 2023-12-19
KR102613379B1 (ko) 2023-12-12
JP2022529637A (ja) 2022-06-23

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