KR102613379B1 - 광검출기 센서 어레이들 - Google Patents

광검출기 센서 어레이들 Download PDF

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KR102613379B1
KR102613379B1 KR1020217037498A KR20217037498A KR102613379B1 KR 102613379 B1 KR102613379 B1 KR 102613379B1 KR 1020217037498 A KR1020217037498 A KR 1020217037498A KR 20217037498 A KR20217037498 A KR 20217037498A KR 102613379 B1 KR102613379 B1 KR 102613379B1
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pixel
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KR20220016822A (ko
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세르게이 오크호닌
맥심 구리브
데니스 살린
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액트라이트 에스 에이
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Priority claimed from US16/387,011 external-priority patent/US10964837B2/en
Priority claimed from US16/429,158 external-priority patent/US11114480B2/en
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    • H01L27/1463—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/807—Pixel isolation structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
    • H01L27/14616—
    • H01L27/14623—
    • H01L27/14647—
    • H01L27/14683—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/011—Manufacture or treatment of image sensors covered by group H10F39/12
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/011—Manufacture or treatment of image sensors covered by group H10F39/12
    • H10F39/024—Manufacture or treatment of image sensors covered by group H10F39/12 of coatings or optical elements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/011—Manufacture or treatment of image sensors covered by group H10F39/12
    • H10F39/026—Wafer-level processing
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
    • H10F39/182—Colour image sensors
    • H10F39/1825—Multicolour image sensors having stacked structure, e.g. NPN, NPNPN or multiple quantum well [MQW] structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/803—Pixels having integrated switching, control, storage or amplification elements
    • H10F39/8037—Pixels having integrated switching, control, storage or amplification elements the integrated elements comprising a transistor
    • H10F39/80377—Pixels having integrated switching, control, storage or amplification elements the integrated elements comprising a transistor characterised by the channel of the transistor, e.g. channel having a doping gradient
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/805—Coatings
    • H10F39/8057—Optical shielding
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/811—Interconnections

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  • Solid State Image Pick-Up Elements (AREA)
  • Light Receiving Elements (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
KR1020217037498A 2019-04-17 2020-04-14 광검출기 센서 어레이들 Active KR102613379B1 (ko)

Applications Claiming Priority (7)

Application Number Priority Date Filing Date Title
US16/387,011 US10964837B2 (en) 2013-03-15 2019-04-17 Photo detector systems and methods of operating same
US16/387,011 2019-04-17
US16/429,158 2019-06-03
US16/429,158 US11114480B2 (en) 2013-03-15 2019-06-03 Photodetector
US16/776,572 2020-01-30
US16/776,572 US11251217B2 (en) 2019-04-17 2020-01-30 Photodetector sensor arrays
PCT/EP2020/060388 WO2020212305A1 (en) 2019-04-17 2020-04-14 Photodetector sensor arrays

Publications (2)

Publication Number Publication Date
KR20220016822A KR20220016822A (ko) 2022-02-10
KR102613379B1 true KR102613379B1 (ko) 2023-12-12

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Country Status (7)

Country Link
US (1) US11251217B2 (https=)
EP (1) EP3956929A1 (https=)
JP (1) JP7400164B2 (https=)
KR (1) KR102613379B1 (https=)
CN (1) CN113875008B (https=)
IL (1) IL287245B2 (https=)
WO (1) WO2020212305A1 (https=)

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US11114480B2 (en) 2013-03-15 2021-09-07 ActLight SA Photodetector
US11735677B2 (en) * 2020-07-20 2023-08-22 ActLight SA Photodetectors and photodetector arrays
JP7588028B2 (ja) * 2021-01-26 2024-11-21 日本ルメンタム株式会社 半導体受光素子
KR102567702B1 (ko) * 2021-06-30 2023-08-18 한국원자력연구원 방사선 검출소자 및 이의 제조방법
US12474453B2 (en) 2022-01-20 2025-11-18 ActLight SA Control techniques for photodetector systems
CN115207150B (zh) * 2022-07-21 2023-10-10 北京工业大学 一种全通信波段覆盖的高速光电探测器
US12598374B2 (en) 2023-09-27 2026-04-07 ActLight SA Techniques for minimizing power consumption in photodetector measurements

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US20100084729A1 (en) 2008-08-29 2010-04-08 Gary Steinbrueck Integrated photodiode for semiconductor substrates
US20110133160A1 (en) 2009-12-08 2011-06-09 Zena Technologies, Inc. Nanowire structured photodiode with a surrounding epitaxially grown p or n layer
US20110220969A1 (en) 2010-03-12 2011-09-15 Fujio Masuoka Solid state imaging device
US20110272561A1 (en) 2010-03-23 2011-11-10 Stmicroelectronics S.R.L. Method of detecting impinging position of photons on a geiger-mode avalanche photodiode, related geiger-mode avalanche photodiode and fabrication process

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IL287245A (en) 2021-12-01
US11251217B2 (en) 2022-02-15
IL287245B2 (en) 2025-08-01
IL287245B1 (en) 2025-04-01
EP3956929A1 (en) 2022-02-23
CN113875008A (zh) 2021-12-31
KR20220016822A (ko) 2022-02-10
US20200373346A1 (en) 2020-11-26
CN113875008B (zh) 2025-08-05
WO2020212305A1 (en) 2020-10-22
JP7400164B2 (ja) 2023-12-19
JP2022529637A (ja) 2022-06-23

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