CN113875008B - 光探测器传感器阵列 - Google Patents

光探测器传感器阵列

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Publication number
CN113875008B
CN113875008B CN202080029263.9A CN202080029263A CN113875008B CN 113875008 B CN113875008 B CN 113875008B CN 202080029263 A CN202080029263 A CN 202080029263A CN 113875008 B CN113875008 B CN 113875008B
Authority
CN
China
Prior art keywords
layer
contact layer
light absorbing
doped
upper contact
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
CN202080029263.9A
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English (en)
Chinese (zh)
Other versions
CN113875008A (zh
Inventor
塞盖·奥霍尼恩
马克西姆·谷列夫
丹尼斯·萨林
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Actlight SA
Original Assignee
Actlight SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US16/387,011 external-priority patent/US10964837B2/en
Priority claimed from US16/429,158 external-priority patent/US11114480B2/en
Application filed by Actlight SA filed Critical Actlight SA
Publication of CN113875008A publication Critical patent/CN113875008A/zh
Application granted granted Critical
Publication of CN113875008B publication Critical patent/CN113875008B/zh
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/011—Manufacture or treatment of image sensors covered by group H10F39/12
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/011—Manufacture or treatment of image sensors covered by group H10F39/12
    • H10F39/024—Manufacture or treatment of image sensors covered by group H10F39/12 of coatings or optical elements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/011—Manufacture or treatment of image sensors covered by group H10F39/12
    • H10F39/026—Wafer-level processing
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
    • H10F39/182—Colour image sensors
    • H10F39/1825—Multicolour image sensors having stacked structure, e.g. NPN, NPNPN or multiple quantum well [MQW] structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/803—Pixels having integrated switching, control, storage or amplification elements
    • H10F39/8037—Pixels having integrated switching, control, storage or amplification elements the integrated elements comprising a transistor
    • H10F39/80377—Pixels having integrated switching, control, storage or amplification elements the integrated elements comprising a transistor characterised by the channel of the transistor, e.g. channel having a doping gradient
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/805—Coatings
    • H10F39/8057—Optical shielding
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/807—Pixel isolation structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/811—Interconnections

Landscapes

  • Solid State Image Pick-Up Elements (AREA)
  • Light Receiving Elements (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
CN202080029263.9A 2019-04-17 2020-04-14 光探测器传感器阵列 Active CN113875008B (zh)

Applications Claiming Priority (7)

Application Number Priority Date Filing Date Title
US16/387,011 US10964837B2 (en) 2013-03-15 2019-04-17 Photo detector systems and methods of operating same
US16/387,011 2019-04-17
US16/429,158 2019-06-03
US16/429,158 US11114480B2 (en) 2013-03-15 2019-06-03 Photodetector
US16/776,572 2020-01-30
US16/776,572 US11251217B2 (en) 2019-04-17 2020-01-30 Photodetector sensor arrays
PCT/EP2020/060388 WO2020212305A1 (en) 2019-04-17 2020-04-14 Photodetector sensor arrays

Publications (2)

Publication Number Publication Date
CN113875008A CN113875008A (zh) 2021-12-31
CN113875008B true CN113875008B (zh) 2025-08-05

Family

ID=72837083

Family Applications (1)

Application Number Title Priority Date Filing Date
CN202080029263.9A Active CN113875008B (zh) 2019-04-17 2020-04-14 光探测器传感器阵列

Country Status (7)

Country Link
US (1) US11251217B2 (https=)
EP (1) EP3956929A1 (https=)
JP (1) JP7400164B2 (https=)
KR (1) KR102613379B1 (https=)
CN (1) CN113875008B (https=)
IL (1) IL287245B2 (https=)
WO (1) WO2020212305A1 (https=)

Families Citing this family (8)

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US11837669B2 (en) 2013-03-15 2023-12-05 ActLight SA Photo detector systems and methods of operating same
US11114480B2 (en) 2013-03-15 2021-09-07 ActLight SA Photodetector
US11735677B2 (en) * 2020-07-20 2023-08-22 ActLight SA Photodetectors and photodetector arrays
JP7588028B2 (ja) * 2021-01-26 2024-11-21 日本ルメンタム株式会社 半導体受光素子
KR102567702B1 (ko) * 2021-06-30 2023-08-18 한국원자력연구원 방사선 검출소자 및 이의 제조방법
US12474453B2 (en) 2022-01-20 2025-11-18 ActLight SA Control techniques for photodetector systems
CN115207150B (zh) * 2022-07-21 2023-10-10 北京工业大学 一种全通信波段覆盖的高速光电探测器
US12598374B2 (en) 2023-09-27 2026-04-07 ActLight SA Techniques for minimizing power consumption in photodetector measurements

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Also Published As

Publication number Publication date
IL287245A (en) 2021-12-01
US11251217B2 (en) 2022-02-15
IL287245B2 (en) 2025-08-01
IL287245B1 (en) 2025-04-01
EP3956929A1 (en) 2022-02-23
CN113875008A (zh) 2021-12-31
KR20220016822A (ko) 2022-02-10
US20200373346A1 (en) 2020-11-26
WO2020212305A1 (en) 2020-10-22
JP7400164B2 (ja) 2023-12-19
KR102613379B1 (ko) 2023-12-12
JP2022529637A (ja) 2022-06-23

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