IL275650B2 - Diffraction-based coverage scattering measurement - Google Patents

Diffraction-based coverage scattering measurement

Info

Publication number
IL275650B2
IL275650B2 IL275650A IL27565020A IL275650B2 IL 275650 B2 IL275650 B2 IL 275650B2 IL 275650 A IL275650 A IL 275650A IL 27565020 A IL27565020 A IL 27565020A IL 275650 B2 IL275650 B2 IL 275650B2
Authority
IL
Israel
Prior art keywords
diffraction patterns
positive
overlay
asymmetry
negative
Prior art date
Application number
IL275650A
Other languages
English (en)
Hebrew (he)
Other versions
IL275650A (en
IL275650B (en
Original Assignee
Kla Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US15/757,119 external-priority patent/US20180342063A1/en
Application filed by Kla Corp filed Critical Kla Corp
Publication of IL275650A publication Critical patent/IL275650A/en
Publication of IL275650B publication Critical patent/IL275650B/en
Publication of IL275650B2 publication Critical patent/IL275650B2/en

Links

Classifications

    • GPHYSICS
    • G01MEASURING; TESTING
    • G01NINVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/17Systems in which incident light is modified in accordance with the properties of the material investigated
    • G01N21/47Scattering, i.e. diffuse reflection
    • G01N21/4788Diffraction
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605Workpiece metrology
    • G03F7/70616Monitoring the printed patterns
    • G03F7/70633Overlay, i.e. relative alignment between patterns printed by separate exposures in different layers, or in the same layer in multiple exposures or stitching
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01NINVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84Systems specially adapted for particular applications
    • G01N21/88Investigating the presence of flaws or contamination
    • G01N21/95Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
    • G01N21/9501Semiconductor wafers
    • GPHYSICS
    • G02OPTICS
    • G02BOPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B27/00Optical systems or apparatus not provided for by any of the groups G02B1/00 - G02B26/00, G02B30/00
    • G02B27/42Diffraction optics, i.e. systems including a diffractive element being designed for providing a diffractive effect
    • G02B27/4233Diffraction optics, i.e. systems including a diffractive element being designed for providing a diffractive effect having a diffractive element [DOE] contributing to a non-imaging application
    • G02B27/4255Diffraction optics, i.e. systems including a diffractive element being designed for providing a diffractive effect having a diffractive element [DOE] contributing to a non-imaging application for alignment or positioning purposes
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605Workpiece metrology
    • G03F7/70616Monitoring the printed patterns
    • G03F7/70625Dimensions, e.g. line width, critical dimension [CD], profile, sidewall angle or edge roughness
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605Workpiece metrology
    • G03F7/70616Monitoring the printed patterns
    • G03F7/7065Defects, e.g. optical inspection of patterned layer for defects
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605Workpiece metrology
    • G03F7/70653Metrology techniques
    • G03F7/70675Latent image, i.e. measuring the image of the exposed resist prior to development
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/10Measuring as part of the manufacturing process
    • H01L22/12Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01NINVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84Systems specially adapted for particular applications
    • G01N21/88Investigating the presence of flaws or contamination
    • G01N21/8851Scan or image signal processing specially adapted therefor, e.g. for scan signal adjustment, for detecting different kinds of defects, for compensating for structures, markings, edges
    • G01N2021/8887Scan or image signal processing specially adapted therefor, e.g. for scan signal adjustment, for detecting different kinds of defects, for compensating for structures, markings, edges based on image processing techniques

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Analytical Chemistry (AREA)
  • Biochemistry (AREA)
  • Pathology (AREA)
  • Immunology (AREA)
  • General Health & Medical Sciences (AREA)
  • Health & Medical Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Optics & Photonics (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Length Measuring Devices By Optical Means (AREA)
  • Analysing Materials By The Use Of Radiation (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
IL275650A 2018-01-02 2020-06-25 Diffraction-based coverage scattering measurement IL275650B2 (en)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US15/757,119 US20180342063A1 (en) 2017-01-03 2018-01-02 Diffraction Based Overlay Scatterometry
PCT/US2018/012070 WO2018128984A1 (en) 2017-01-03 2018-01-02 Diffraction based overlay scatterometry
US16/122,495 US10824079B2 (en) 2017-01-03 2018-09-05 Diffraction based overlay scatterometry
PCT/US2018/057896 WO2019135819A1 (en) 2017-01-03 2018-10-29 Diffraction based overlay scatterometry

Publications (3)

Publication Number Publication Date
IL275650A IL275650A (en) 2020-08-31
IL275650B IL275650B (en) 2022-12-01
IL275650B2 true IL275650B2 (en) 2023-04-01

Family

ID=68318115

Family Applications (1)

Application Number Title Priority Date Filing Date
IL275650A IL275650B2 (en) 2018-01-02 2020-06-25 Diffraction-based coverage scattering measurement

Country Status (9)

Country Link
US (1) US10824079B2 (enExample)
EP (1) EP3721296A4 (enExample)
JP (1) JP7101786B2 (enExample)
KR (1) KR102391336B1 (enExample)
CN (2) CN111566564A (enExample)
IL (1) IL275650B2 (enExample)
SG (1) SG11202006133SA (enExample)
TW (1) TWI798265B (enExample)
WO (1) WO2019135819A1 (enExample)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10705435B2 (en) 2018-01-12 2020-07-07 Globalfoundries Inc. Self-referencing and self-calibrating interference pattern overlay measurement
US20220283515A1 (en) * 2019-08-30 2022-09-08 Asml Holding N.V. Metrology system and method
US11686576B2 (en) 2020-06-04 2023-06-27 Kla Corporation Metrology target for one-dimensional measurement of periodic misregistration
US12100574B2 (en) 2020-07-01 2024-09-24 Kla Corporation Target and algorithm to measure overlay by modeling back scattering electrons on overlapping structures
US11355375B2 (en) * 2020-07-09 2022-06-07 Kla Corporation Device-like overlay metrology targets displaying Moiré effects
US11300405B2 (en) 2020-08-03 2022-04-12 Kla Corporation Grey-mode scanning scatterometry overlay metrology
CN112729113B (zh) * 2020-12-25 2022-03-18 长江存储科技有限责任公司 套合精度的测量方法及测量装置
US11796925B2 (en) * 2022-01-03 2023-10-24 Kla Corporation Scanning overlay metrology using overlay targets having multiple spatial frequencies
US12032300B2 (en) 2022-02-14 2024-07-09 Kla Corporation Imaging overlay with mutually coherent oblique illumination
US12422363B2 (en) 2022-03-30 2025-09-23 Kla Corporation Scanning scatterometry overlay metrology
US12487190B2 (en) 2022-03-30 2025-12-02 Kla Corporation System and method for isolation of specific fourier pupil frequency in overlay metrology
US12235588B2 (en) * 2023-02-16 2025-02-25 Kla Corporation Scanning overlay metrology with high signal to noise ratio
US12373936B2 (en) 2023-12-08 2025-07-29 Kla Corporation System and method for overlay metrology using a phase mask

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US5453969A (en) * 1994-05-04 1995-09-26 California Institute Of Technology Optical memory with pit depth encoding
US5598265A (en) * 1995-04-06 1997-01-28 Zygo Corporation Method for profiling an object surface using a large equivalent wavelength and system therefor
IL138552A (en) * 2000-09-19 2006-08-01 Nova Measuring Instr Ltd Lateral shift measurement using an optical technique
US7193715B2 (en) * 2002-11-14 2007-03-20 Tokyo Electron Limited Measurement of overlay using diffraction gratings when overlay exceeds the grating period
US7230703B2 (en) 2003-07-17 2007-06-12 Tokyo Electron Limited Apparatus and method for measuring overlay by diffraction gratings
CN100468213C (zh) * 2006-10-18 2009-03-11 上海微电子装备有限公司 用于光刻装置的对准系统及其级结合光栅系统
US7710572B2 (en) * 2006-11-30 2010-05-04 Asml Netherlands B.V. Inspection method and apparatus, lithographic apparatus, lithographic processing cell and device manufacturing method
CN101876538A (zh) * 2010-05-07 2010-11-03 中国科学院光电技术研究所 一种接近式纳米光刻中的间隙测量方法
IL217843A (en) 2011-02-11 2016-11-30 Asml Netherlands Bv A system and method for testing, a lithographic system, a cell for lithographic processing, and a method for producing a device
US20120244461A1 (en) 2011-03-25 2012-09-27 Toshiba America Electronic Components, Inc. Overlay control method and a semiconductor manufacturing method and apparatus employing the same
JP5967924B2 (ja) * 2011-12-21 2016-08-10 キヤノン株式会社 位置検出装置、インプリント装置およびデバイス製造方法
WO2014062972A1 (en) * 2012-10-18 2014-04-24 Kla-Tencor Corporation Symmetric target design in scatterometry overlay metrology
US9189705B2 (en) * 2013-08-08 2015-11-17 JSMSW Technology LLC Phase-controlled model-based overlay measurement systems and methods
WO2015078669A1 (en) * 2013-11-26 2015-06-04 Asml Netherlands B.V. Method, apparatus and substrates for lithographic metrology
EP3149544B1 (en) * 2014-06-02 2018-10-10 ASML Netherlands B.V. Method of designing metrology targets, substrates having metrology targets, method of measuring overlay, and device manufacturing method
WO2016078862A1 (en) * 2014-11-21 2016-05-26 Asml Netherlands B.V. Metrology method and apparatus
CN107078074B (zh) * 2014-11-25 2021-05-25 科磊股份有限公司 分析及利用景观
WO2016096524A1 (en) * 2014-12-19 2016-06-23 Asml Netherlands B.V. Method of measuring asymmetry, inspection apparatus, lithographic system and device manufacturing method
WO2017108411A1 (en) * 2015-12-23 2017-06-29 Asml Netherlands B.V. Metrology method and apparatus
CN106933046B (zh) * 2015-12-30 2019-05-03 上海微电子装备(集团)股份有限公司 用于套刻误差检测的装置及测校方法
CN107340689B (zh) * 2016-02-29 2019-10-25 上海微电子装备(集团)股份有限公司 一种测量套刻误差的装置和方法
US20180342063A1 (en) * 2017-01-03 2018-11-29 Kla-Tencor Corporation Diffraction Based Overlay Scatterometry

Also Published As

Publication number Publication date
US20190004439A1 (en) 2019-01-03
US10824079B2 (en) 2020-11-03
KR20200096848A (ko) 2020-08-13
SG11202006133SA (en) 2020-07-29
IL275650A (en) 2020-08-31
IL275650B (en) 2022-12-01
TW201931481A (zh) 2019-08-01
EP3721296A1 (en) 2020-10-14
EP3721296A4 (en) 2021-09-08
CN111566564A (zh) 2020-08-21
JP2021510210A (ja) 2021-04-15
TWI798265B (zh) 2023-04-11
WO2019135819A1 (en) 2019-07-11
JP7101786B2 (ja) 2022-07-15
KR102391336B1 (ko) 2022-04-26
CN120762257A (zh) 2025-10-10

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