KR102391336B1 - 회절 기반 오버레이 스캐터로메트리 - Google Patents

회절 기반 오버레이 스캐터로메트리 Download PDF

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KR102391336B1
KR102391336B1 KR1020207022325A KR20207022325A KR102391336B1 KR 102391336 B1 KR102391336 B1 KR 102391336B1 KR 1020207022325 A KR1020207022325 A KR 1020207022325A KR 20207022325 A KR20207022325 A KR 20207022325A KR 102391336 B1 KR102391336 B1 KR 102391336B1
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overlay
positive
asymmetry
negative
diffraction pattern
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KR20200096848A (ko
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유발 루바쉐브스키
유리 파스코버
블라디미르 레빈스키
암논 마나쎈
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케이엘에이 코포레이션
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    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/17—Systems in which incident light is modified in accordance with the properties of the material investigated
    • G01N21/47—Scattering, i.e. diffuse reflection
    • G01N21/4788—Diffraction
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/88—Investigating the presence of flaws or contamination
    • G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
    • G01N21/9501—Semiconductor wafers
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B27/00—Optical systems or apparatus not provided for by any of the groups G02B1/00 - G02B26/00, G02B30/00
    • G02B27/42—Diffraction optics, i.e. systems including a diffractive element being designed for providing a diffractive effect
    • G02B27/4233—Diffraction optics, i.e. systems including a diffractive element being designed for providing a diffractive effect having a diffractive element [DOE] contributing to a non-imaging application
    • G02B27/4255—Diffraction optics, i.e. systems including a diffractive element being designed for providing a diffractive effect having a diffractive element [DOE] contributing to a non-imaging application for alignment or positioning purposes
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/70616—Monitoring the printed patterns
    • G03F7/70625—Dimensions, e.g. line width, critical dimension [CD], profile, sidewall angle or edge roughness
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/70616—Monitoring the printed patterns
    • G03F7/70633—Overlay, i.e. relative alignment between patterns printed by separate exposures in different layers, or in the same layer in multiple exposures or stitching
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/70616—Monitoring the printed patterns
    • G03F7/7065—Defects, e.g. optical inspection of patterned layer for defects
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/70653—Metrology techniques
    • G03F7/70675—Latent image, i.e. measuring the image of the exposed resist prior to development
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/10—Measuring as part of the manufacturing process
    • H01L22/12—Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/88—Investigating the presence of flaws or contamination
    • G01N21/8851—Scan or image signal processing specially adapted therefor, e.g. for scan signal adjustment, for detecting different kinds of defects, for compensating for structures, markings, edges
    • G01N2021/8887—Scan or image signal processing specially adapted therefor, e.g. for scan signal adjustment, for detecting different kinds of defects, for compensating for structures, markings, edges based on image processing techniques

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Analytical Chemistry (AREA)
  • Biochemistry (AREA)
  • Pathology (AREA)
  • Immunology (AREA)
  • General Health & Medical Sciences (AREA)
  • Health & Medical Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Optics & Photonics (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Length Measuring Devices By Optical Means (AREA)
  • Analysing Materials By The Use Of Radiation (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
KR1020207022325A 2018-01-02 2018-10-29 회절 기반 오버레이 스캐터로메트리 Active KR102391336B1 (ko)

Applications Claiming Priority (7)

Application Number Priority Date Filing Date Title
USPCT/US2018/012070 2018-01-02
US15/757,119 US20180342063A1 (en) 2017-01-03 2018-01-02 Diffraction Based Overlay Scatterometry
PCT/US2018/012070 WO2018128984A1 (en) 2017-01-03 2018-01-02 Diffraction based overlay scatterometry
US15/757,119 2018-03-02
US16/122,495 US10824079B2 (en) 2017-01-03 2018-09-05 Diffraction based overlay scatterometry
US16/122,495 2018-09-05
PCT/US2018/057896 WO2019135819A1 (en) 2017-01-03 2018-10-29 Diffraction based overlay scatterometry

Publications (2)

Publication Number Publication Date
KR20200096848A KR20200096848A (ko) 2020-08-13
KR102391336B1 true KR102391336B1 (ko) 2022-04-26

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KR1020207022325A Active KR102391336B1 (ko) 2018-01-02 2018-10-29 회절 기반 오버레이 스캐터로메트리

Country Status (9)

Country Link
US (1) US10824079B2 (enExample)
EP (1) EP3721296A4 (enExample)
JP (1) JP7101786B2 (enExample)
KR (1) KR102391336B1 (enExample)
CN (2) CN111566564A (enExample)
IL (1) IL275650B2 (enExample)
SG (1) SG11202006133SA (enExample)
TW (1) TWI798265B (enExample)
WO (1) WO2019135819A1 (enExample)

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US10705435B2 (en) 2018-01-12 2020-07-07 Globalfoundries Inc. Self-referencing and self-calibrating interference pattern overlay measurement
US20220283515A1 (en) * 2019-08-30 2022-09-08 Asml Holding N.V. Metrology system and method
US11686576B2 (en) 2020-06-04 2023-06-27 Kla Corporation Metrology target for one-dimensional measurement of periodic misregistration
US12100574B2 (en) 2020-07-01 2024-09-24 Kla Corporation Target and algorithm to measure overlay by modeling back scattering electrons on overlapping structures
US11355375B2 (en) * 2020-07-09 2022-06-07 Kla Corporation Device-like overlay metrology targets displaying Moiré effects
US11300405B2 (en) 2020-08-03 2022-04-12 Kla Corporation Grey-mode scanning scatterometry overlay metrology
CN112729113B (zh) * 2020-12-25 2022-03-18 长江存储科技有限责任公司 套合精度的测量方法及测量装置
US11796925B2 (en) * 2022-01-03 2023-10-24 Kla Corporation Scanning overlay metrology using overlay targets having multiple spatial frequencies
US12032300B2 (en) 2022-02-14 2024-07-09 Kla Corporation Imaging overlay with mutually coherent oblique illumination
US12422363B2 (en) 2022-03-30 2025-09-23 Kla Corporation Scanning scatterometry overlay metrology
US12487190B2 (en) 2022-03-30 2025-12-02 Kla Corporation System and method for isolation of specific fourier pupil frequency in overlay metrology
US12235588B2 (en) * 2023-02-16 2025-02-25 Kla Corporation Scanning overlay metrology with high signal to noise ratio
US12373936B2 (en) 2023-12-08 2025-07-29 Kla Corporation System and method for overlay metrology using a phase mask

Citations (5)

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US20120206703A1 (en) 2011-02-11 2012-08-16 Asml Netherlands B.V. Inspection Apparatus and Method, Lithographic Apparatus, Lithographic Processing Cell and Device Manufacturing Method
US20120244461A1 (en) 2011-03-25 2012-09-27 Toshiba America Electronic Components, Inc. Overlay control method and a semiconductor manufacturing method and apparatus employing the same
US20160146740A1 (en) * 2014-11-21 2016-05-26 Asml Netherlands B.V. Metrology method and apparatus
US20160216197A1 (en) 2012-10-18 2016-07-28 Kla-Tencor Corporation Symmetric target design in scatterometry overlay metrology
JP2016539370A (ja) * 2013-11-26 2016-12-15 エーエスエムエル ネザーランズ ビー．ブイ． リソグラフィメトロロジのための方法、装置及び基板

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IL138552A (en) * 2000-09-19 2006-08-01 Nova Measuring Instr Ltd Lateral shift measurement using an optical technique
US7193715B2 (en) * 2002-11-14 2007-03-20 Tokyo Electron Limited Measurement of overlay using diffraction gratings when overlay exceeds the grating period
US7230703B2 (en) 2003-07-17 2007-06-12 Tokyo Electron Limited Apparatus and method for measuring overlay by diffraction gratings
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US20120244461A1 (en) 2011-03-25 2012-09-27 Toshiba America Electronic Components, Inc. Overlay control method and a semiconductor manufacturing method and apparatus employing the same
US20160216197A1 (en) 2012-10-18 2016-07-28 Kla-Tencor Corporation Symmetric target design in scatterometry overlay metrology
JP2016539370A (ja) * 2013-11-26 2016-12-15 エーエスエムエル ネザーランズ ビー．ブイ． リソグラフィメトロロジのための方法、装置及び基板
US20160146740A1 (en) * 2014-11-21 2016-05-26 Asml Netherlands B.V. Metrology method and apparatus

Also Published As

Publication number Publication date
US20190004439A1 (en) 2019-01-03
US10824079B2 (en) 2020-11-03
KR20200096848A (ko) 2020-08-13
SG11202006133SA (en) 2020-07-29
IL275650A (en) 2020-08-31
IL275650B (en) 2022-12-01
TW201931481A (zh) 2019-08-01
IL275650B2 (en) 2023-04-01
EP3721296A1 (en) 2020-10-14
EP3721296A4 (en) 2021-09-08
CN111566564A (zh) 2020-08-21
JP2021510210A (ja) 2021-04-15
TWI798265B (zh) 2023-04-11
WO2019135819A1 (en) 2019-07-11
JP7101786B2 (ja) 2022-07-15
CN120762257A (zh) 2025-10-10

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