CN111566564A - 基于衍射的叠加散射测量 - Google Patents

基于衍射的叠加散射测量 Download PDF

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Publication number
CN111566564A
CN111566564A CN201880085028.6A CN201880085028A CN111566564A CN 111566564 A CN111566564 A CN 111566564A CN 201880085028 A CN201880085028 A CN 201880085028A CN 111566564 A CN111566564 A CN 111566564A
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CN
China
Prior art keywords
diffraction patterns
positive
asymmetry
superposition
negative
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN201880085028.6A
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English (en)
Chinese (zh)
Inventor
Y·卢巴舍夫斯基
Y·帕斯卡维尔
V·莱温斯基
A·玛纳森
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KLA Corp
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KLA Tencor Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Publication date
Priority claimed from PCT/US2018/012070 external-priority patent/WO2018128984A1/en
Application filed by KLA Tencor Corp filed Critical KLA Tencor Corp
Priority to CN202511051445.7A priority Critical patent/CN120762257A/zh
Publication of CN111566564A publication Critical patent/CN111566564A/zh
Pending legal-status Critical Current

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    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/17—Systems in which incident light is modified in accordance with the properties of the material investigated
    • G01N21/47—Scattering, i.e. diffuse reflection
    • G01N21/4788—Diffraction
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/88—Investigating the presence of flaws or contamination
    • G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
    • G01N21/9501—Semiconductor wafers
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B27/00—Optical systems or apparatus not provided for by any of the groups G02B1/00 - G02B26/00, G02B30/00
    • G02B27/42—Diffraction optics, i.e. systems including a diffractive element being designed for providing a diffractive effect
    • G02B27/4233—Diffraction optics, i.e. systems including a diffractive element being designed for providing a diffractive effect having a diffractive element [DOE] contributing to a non-imaging application
    • G02B27/4255—Diffraction optics, i.e. systems including a diffractive element being designed for providing a diffractive effect having a diffractive element [DOE] contributing to a non-imaging application for alignment or positioning purposes
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/70616—Monitoring the printed patterns
    • G03F7/70625—Dimensions, e.g. line width, critical dimension [CD], profile, sidewall angle or edge roughness
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/70616—Monitoring the printed patterns
    • G03F7/70633—Overlay, i.e. relative alignment between patterns printed by separate exposures in different layers, or in the same layer in multiple exposures or stitching
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/70616—Monitoring the printed patterns
    • G03F7/7065—Defects, e.g. optical inspection of patterned layer for defects
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/70653—Metrology techniques
    • G03F7/70675—Latent image, i.e. measuring the image of the exposed resist prior to development
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/10—Measuring as part of the manufacturing process
    • H01L22/12—Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/88—Investigating the presence of flaws or contamination
    • G01N21/8851—Scan or image signal processing specially adapted therefor, e.g. for scan signal adjustment, for detecting different kinds of defects, for compensating for structures, markings, edges
    • G01N2021/8887—Scan or image signal processing specially adapted therefor, e.g. for scan signal adjustment, for detecting different kinds of defects, for compensating for structures, markings, edges based on image processing techniques

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Biochemistry (AREA)
  • General Health & Medical Sciences (AREA)
  • Immunology (AREA)
  • Pathology (AREA)
  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Optics & Photonics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Length Measuring Devices By Optical Means (AREA)
  • Analysing Materials By The Use Of Radiation (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
CN201880085028.6A 2018-01-02 2018-10-29 基于衍射的叠加散射测量 Pending CN111566564A (zh)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN202511051445.7A CN120762257A (zh) 2018-01-02 2018-10-29 基于衍射的叠加散射测量

Applications Claiming Priority (7)

Application Number Priority Date Filing Date Title
PCT/US2018/012070 WO2018128984A1 (en) 2017-01-03 2018-01-02 Diffraction based overlay scatterometry
USPCT/US2018/012070 2018-01-02
US15/757,119 US20180342063A1 (en) 2017-01-03 2018-01-02 Diffraction Based Overlay Scatterometry
US15/757,119 2018-03-02
US16/122,495 2018-09-05
US16/122,495 US10824079B2 (en) 2017-01-03 2018-09-05 Diffraction based overlay scatterometry
PCT/US2018/057896 WO2019135819A1 (en) 2017-01-03 2018-10-29 Diffraction based overlay scatterometry

Related Child Applications (1)

Application Number Title Priority Date Filing Date
CN202511051445.7A Division CN120762257A (zh) 2018-01-02 2018-10-29 基于衍射的叠加散射测量

Publications (1)

Publication Number Publication Date
CN111566564A true CN111566564A (zh) 2020-08-21

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US (1) US10824079B2 (enExample)
EP (1) EP3721296A4 (enExample)
JP (1) JP7101786B2 (enExample)
KR (1) KR102391336B1 (enExample)
CN (2) CN120762257A (enExample)
IL (1) IL275650B2 (enExample)
SG (1) SG11202006133SA (enExample)
TW (1) TWI798265B (enExample)
WO (1) WO2019135819A1 (enExample)

Cited By (3)

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Publication number Priority date Publication date Assignee Title
CN112729113A (zh) * 2020-12-25 2021-04-30 长江存储科技有限责任公司 套合精度的测量方法及测量装置
CN117980828A (zh) * 2022-01-03 2024-05-03 科磊股份有限公司 使用具有多个空间频率的叠对目标的扫描叠对计量
CN120418729A (zh) * 2023-02-16 2025-08-01 科磊股份有限公司 具有高信噪比的扫描叠加计量

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US10705435B2 (en) 2018-01-12 2020-07-07 Globalfoundries Inc. Self-referencing and self-calibrating interference pattern overlay measurement
US20220283515A1 (en) * 2019-08-30 2022-09-08 Asml Holding N.V. Metrology system and method
US11686576B2 (en) 2020-06-04 2023-06-27 Kla Corporation Metrology target for one-dimensional measurement of periodic misregistration
US12100574B2 (en) 2020-07-01 2024-09-24 Kla Corporation Target and algorithm to measure overlay by modeling back scattering electrons on overlapping structures
US11355375B2 (en) * 2020-07-09 2022-06-07 Kla Corporation Device-like overlay metrology targets displaying Moiré effects
US11300405B2 (en) 2020-08-03 2022-04-12 Kla Corporation Grey-mode scanning scatterometry overlay metrology
US12032300B2 (en) 2022-02-14 2024-07-09 Kla Corporation Imaging overlay with mutually coherent oblique illumination
US12487190B2 (en) 2022-03-30 2025-12-02 Kla Corporation System and method for isolation of specific fourier pupil frequency in overlay metrology
US12422363B2 (en) 2022-03-30 2025-09-23 Kla Corporation Scanning scatterometry overlay metrology
US12373936B2 (en) 2023-12-08 2025-07-29 Kla Corporation System and method for overlay metrology using a phase mask

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CN101876538A (zh) * 2010-05-07 2010-11-03 中国科学院光电技术研究所 一种接近式纳米光刻中的间隙测量方法
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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN112729113A (zh) * 2020-12-25 2021-04-30 长江存储科技有限责任公司 套合精度的测量方法及测量装置
CN117980828A (zh) * 2022-01-03 2024-05-03 科磊股份有限公司 使用具有多个空间频率的叠对目标的扫描叠对计量
CN120418729A (zh) * 2023-02-16 2025-08-01 科磊股份有限公司 具有高信噪比的扫描叠加计量

Also Published As

Publication number Publication date
TWI798265B (zh) 2023-04-11
KR102391336B1 (ko) 2022-04-26
IL275650B (en) 2022-12-01
JP7101786B2 (ja) 2022-07-15
EP3721296A4 (en) 2021-09-08
EP3721296A1 (en) 2020-10-14
US20190004439A1 (en) 2019-01-03
WO2019135819A1 (en) 2019-07-11
US10824079B2 (en) 2020-11-03
TW201931481A (zh) 2019-08-01
CN120762257A (zh) 2025-10-10
IL275650A (en) 2020-08-31
KR20200096848A (ko) 2020-08-13
JP2021510210A (ja) 2021-04-15
IL275650B2 (en) 2023-04-01
SG11202006133SA (en) 2020-07-29

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