TWI798265B - 基於繞射之重疊散射術 - Google Patents

基於繞射之重疊散射術 Download PDF

Info

Publication number
TWI798265B
TWI798265B TW107133838A TW107133838A TWI798265B TW I798265 B TWI798265 B TW I798265B TW 107133838 A TW107133838 A TW 107133838A TW 107133838 A TW107133838 A TW 107133838A TW I798265 B TWI798265 B TW I798265B
Authority
TW
Taiwan
Prior art keywords
diffraction patterns
positive
image
overlap
asymmetry
Prior art date
Application number
TW107133838A
Other languages
English (en)
Chinese (zh)
Other versions
TW201931481A (zh
Inventor
尤法 路巴希福斯基
尤瑞 帕斯卡維爾
維拉得摩 朗維司基
阿農 馬那森
Original Assignee
美商克萊譚克公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US15/757,119 external-priority patent/US20180342063A1/en
Application filed by 美商克萊譚克公司 filed Critical 美商克萊譚克公司
Publication of TW201931481A publication Critical patent/TW201931481A/zh
Application granted granted Critical
Publication of TWI798265B publication Critical patent/TWI798265B/zh

Links

Images

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/17—Systems in which incident light is modified in accordance with the properties of the material investigated
    • G01N21/47—Scattering, i.e. diffuse reflection
    • G01N21/4788—Diffraction
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/70616—Monitoring the printed patterns
    • G03F7/70633—Overlay, i.e. relative alignment between patterns printed by separate exposures in different layers, or in the same layer in multiple exposures or stitching
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/88—Investigating the presence of flaws or contamination
    • G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
    • G01N21/9501—Semiconductor wafers
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B27/00—Optical systems or apparatus not provided for by any of the groups G02B1/00 - G02B26/00, G02B30/00
    • G02B27/42—Diffraction optics, i.e. systems including a diffractive element being designed for providing a diffractive effect
    • G02B27/4233—Diffraction optics, i.e. systems including a diffractive element being designed for providing a diffractive effect having a diffractive element [DOE] contributing to a non-imaging application
    • G02B27/4255—Diffraction optics, i.e. systems including a diffractive element being designed for providing a diffractive effect having a diffractive element [DOE] contributing to a non-imaging application for alignment or positioning purposes
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/70616—Monitoring the printed patterns
    • G03F7/70625—Dimensions, e.g. line width, critical dimension [CD], profile, sidewall angle or edge roughness
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/70616—Monitoring the printed patterns
    • G03F7/7065—Defects, e.g. optical inspection of patterned layer for defects
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/70653—Metrology techniques
    • G03F7/70675—Latent image, i.e. measuring the image of the exposed resist prior to development
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/10—Measuring as part of the manufacturing process
    • H01L22/12—Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/88—Investigating the presence of flaws or contamination
    • G01N21/8851—Scan or image signal processing specially adapted therefor, e.g. for scan signal adjustment, for detecting different kinds of defects, for compensating for structures, markings, edges
    • G01N2021/8887—Scan or image signal processing specially adapted therefor, e.g. for scan signal adjustment, for detecting different kinds of defects, for compensating for structures, markings, edges based on image processing techniques

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Analytical Chemistry (AREA)
  • Biochemistry (AREA)
  • Pathology (AREA)
  • Immunology (AREA)
  • General Health & Medical Sciences (AREA)
  • Health & Medical Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Optics & Photonics (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Length Measuring Devices By Optical Means (AREA)
  • Analysing Materials By The Use Of Radiation (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
TW107133838A 2018-01-02 2018-09-26 基於繞射之重疊散射術 TWI798265B (zh)

Applications Claiming Priority (7)

Application Number Priority Date Filing Date Title
??PCT/US18/12070 2018-01-02
US15/757,119 US20180342063A1 (en) 2017-01-03 2018-01-02 Diffraction Based Overlay Scatterometry
PCT/US2018/012070 WO2018128984A1 (en) 2017-01-03 2018-01-02 Diffraction based overlay scatterometry
WOPCT/US18/12070 2018-01-02
US15/757,119 2018-03-02
US16/122,495 US10824079B2 (en) 2017-01-03 2018-09-05 Diffraction based overlay scatterometry
US16/122,495 2018-09-05

Publications (2)

Publication Number Publication Date
TW201931481A TW201931481A (zh) 2019-08-01
TWI798265B true TWI798265B (zh) 2023-04-11

Family

ID=68318115

Family Applications (1)

Application Number Title Priority Date Filing Date
TW107133838A TWI798265B (zh) 2018-01-02 2018-09-26 基於繞射之重疊散射術

Country Status (9)

Country Link
US (1) US10824079B2 (enExample)
EP (1) EP3721296A4 (enExample)
JP (1) JP7101786B2 (enExample)
KR (1) KR102391336B1 (enExample)
CN (2) CN111566564A (enExample)
IL (1) IL275650B2 (enExample)
SG (1) SG11202006133SA (enExample)
TW (1) TWI798265B (enExample)
WO (1) WO2019135819A1 (enExample)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10705435B2 (en) 2018-01-12 2020-07-07 Globalfoundries Inc. Self-referencing and self-calibrating interference pattern overlay measurement
US20220283515A1 (en) * 2019-08-30 2022-09-08 Asml Holding N.V. Metrology system and method
US11686576B2 (en) 2020-06-04 2023-06-27 Kla Corporation Metrology target for one-dimensional measurement of periodic misregistration
US12100574B2 (en) 2020-07-01 2024-09-24 Kla Corporation Target and algorithm to measure overlay by modeling back scattering electrons on overlapping structures
US11355375B2 (en) * 2020-07-09 2022-06-07 Kla Corporation Device-like overlay metrology targets displaying Moiré effects
US11300405B2 (en) 2020-08-03 2022-04-12 Kla Corporation Grey-mode scanning scatterometry overlay metrology
CN112729113B (zh) * 2020-12-25 2022-03-18 长江存储科技有限责任公司 套合精度的测量方法及测量装置
US11796925B2 (en) * 2022-01-03 2023-10-24 Kla Corporation Scanning overlay metrology using overlay targets having multiple spatial frequencies
US12032300B2 (en) 2022-02-14 2024-07-09 Kla Corporation Imaging overlay with mutually coherent oblique illumination
US12422363B2 (en) 2022-03-30 2025-09-23 Kla Corporation Scanning scatterometry overlay metrology
US12487190B2 (en) 2022-03-30 2025-12-02 Kla Corporation System and method for isolation of specific fourier pupil frequency in overlay metrology
US12235588B2 (en) * 2023-02-16 2025-02-25 Kla Corporation Scanning overlay metrology with high signal to noise ratio
US12373936B2 (en) 2023-12-08 2025-07-29 Kla Corporation System and method for overlay metrology using a phase mask

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20030190793A1 (en) * 2000-09-19 2003-10-09 Boaz Brill Lateral shift measurement using an optical technique
US20040137651A1 (en) * 2002-11-14 2004-07-15 Rodney Smedt Measurement of overlay using diffraction gratings when overlay exceeds the grating period
WO2018128984A1 (en) * 2017-01-03 2018-07-12 Kla-Tencor Corporation Diffraction based overlay scatterometry

Family Cites Families (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5453969A (en) * 1994-05-04 1995-09-26 California Institute Of Technology Optical memory with pit depth encoding
US5598265A (en) * 1995-04-06 1997-01-28 Zygo Corporation Method for profiling an object surface using a large equivalent wavelength and system therefor
US7230703B2 (en) 2003-07-17 2007-06-12 Tokyo Electron Limited Apparatus and method for measuring overlay by diffraction gratings
CN100468213C (zh) * 2006-10-18 2009-03-11 上海微电子装备有限公司 用于光刻装置的对准系统及其级结合光栅系统
US7710572B2 (en) * 2006-11-30 2010-05-04 Asml Netherlands B.V. Inspection method and apparatus, lithographic apparatus, lithographic processing cell and device manufacturing method
CN101876538A (zh) * 2010-05-07 2010-11-03 中国科学院光电技术研究所 一种接近式纳米光刻中的间隙测量方法
IL217843A (en) 2011-02-11 2016-11-30 Asml Netherlands Bv A system and method for testing, a lithographic system, a cell for lithographic processing, and a method for producing a device
US20120244461A1 (en) 2011-03-25 2012-09-27 Toshiba America Electronic Components, Inc. Overlay control method and a semiconductor manufacturing method and apparatus employing the same
JP5967924B2 (ja) * 2011-12-21 2016-08-10 キヤノン株式会社 位置検出装置、インプリント装置およびデバイス製造方法
WO2014062972A1 (en) * 2012-10-18 2014-04-24 Kla-Tencor Corporation Symmetric target design in scatterometry overlay metrology
US9189705B2 (en) * 2013-08-08 2015-11-17 JSMSW Technology LLC Phase-controlled model-based overlay measurement systems and methods
WO2015078669A1 (en) * 2013-11-26 2015-06-04 Asml Netherlands B.V. Method, apparatus and substrates for lithographic metrology
EP3149544B1 (en) * 2014-06-02 2018-10-10 ASML Netherlands B.V. Method of designing metrology targets, substrates having metrology targets, method of measuring overlay, and device manufacturing method
WO2016078862A1 (en) * 2014-11-21 2016-05-26 Asml Netherlands B.V. Metrology method and apparatus
CN107078074B (zh) * 2014-11-25 2021-05-25 科磊股份有限公司 分析及利用景观
WO2016096524A1 (en) * 2014-12-19 2016-06-23 Asml Netherlands B.V. Method of measuring asymmetry, inspection apparatus, lithographic system and device manufacturing method
WO2017108411A1 (en) * 2015-12-23 2017-06-29 Asml Netherlands B.V. Metrology method and apparatus
CN106933046B (zh) * 2015-12-30 2019-05-03 上海微电子装备（集团）股份有限公司 用于套刻误差检测的装置及测校方法
CN107340689B (zh) * 2016-02-29 2019-10-25 上海微电子装备（集团）股份有限公司 一种测量套刻误差的装置和方法

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20030190793A1 (en) * 2000-09-19 2003-10-09 Boaz Brill Lateral shift measurement using an optical technique
US20040137651A1 (en) * 2002-11-14 2004-07-15 Rodney Smedt Measurement of overlay using diffraction gratings when overlay exceeds the grating period
WO2018128984A1 (en) * 2017-01-03 2018-07-12 Kla-Tencor Corporation Diffraction based overlay scatterometry
TW201839874A (zh) * 2017-01-03 2018-11-01 美商克萊譚克公司 基於繞射之重疊散射術

Also Published As

Publication number Publication date
US20190004439A1 (en) 2019-01-03
US10824079B2 (en) 2020-11-03
KR20200096848A (ko) 2020-08-13
SG11202006133SA (en) 2020-07-29
IL275650A (en) 2020-08-31
IL275650B (en) 2022-12-01
TW201931481A (zh) 2019-08-01
IL275650B2 (en) 2023-04-01
EP3721296A1 (en) 2020-10-14
EP3721296A4 (en) 2021-09-08
CN111566564A (zh) 2020-08-21
JP2021510210A (ja) 2021-04-15
WO2019135819A1 (en) 2019-07-11
JP7101786B2 (ja) 2022-07-15
KR102391336B1 (ko) 2022-04-26
CN120762257A (zh) 2025-10-10

Similar Documents

Publication Publication Date Title
TWI798265B (zh) 基於繞射之重疊散射術
KR101948912B1 (ko) 검사 장치, 검사 방법 및 디바이스 제조 방법
KR102332956B1 (ko) 반도체 파라미터들을 측정하기 위한 장치, 기법들, 및 타겟 설계들
KR102160840B1 (ko) 임베디드 sem 구조물 오버레이 타겟을 갖는 ovl을 위한 디바이스 상관 계측(dcm)
KR102604927B1 (ko) 기판 상의 하나 이상의 구조체의 특성을 결정하기 위한 계측 시스템 및 방법
TWI656409B (zh) 基於輔助電磁場之引入之一階散射測量疊加之新方法
TWI711894B (zh) 度量衡方法、圖案化裝置、設備及電腦程式
CN110998448B (zh) 量测方法和设备以及计算机程序
KR20200074221A (ko) 측정 방법, 패터닝 디바이스 및 디바이스 제조 방법
TW200938964A (en) Method and apparatus for angular-resolved spectroscopic lithography characterization
JP2020501181A (ja) 測定方法の性能を予測するための方法及び装置、測定方法及び装置
JP2018507438A (ja) メトロロジの方法及び装置、コンピュータプログラム、並びにリソグラフィシステム
KR20150092228A (ko) 구조체의 리소그래피 품질을 결정하는 장치 및 방법
TWI734284B (zh) 用於判定微影製程之效能參數之目標
TWI672569B (zh) 監測來自度量衡裝置之照明特性的方法
TW201839874A (zh) 基於繞射之重疊散射術
TW202331425A (zh) 包含目標配置之基板及相關聯之至少一個圖案化裝置、微影方法及度量衡方法
TW201921137A (zh) 度量衡方法、裝置及電腦程式
JP2025504274A (ja) オーバレイ計量における参照画像グループ化