IL257488B - התקן זכרון מוליך למחצה לא נדיף - Google Patents

התקן זכרון מוליך למחצה לא נדיף

Info

Publication number
IL257488B
IL257488B IL257488A IL25748818A IL257488B IL 257488 B IL257488 B IL 257488B IL 257488 A IL257488 A IL 257488A IL 25748818 A IL25748818 A IL 25748818A IL 257488 B IL257488 B IL 257488B
Authority
IL
Israel
Prior art keywords
memory device
semiconductor memory
volatile semiconductor
volatile
semiconductor
Prior art date
Application number
IL257488A
Other languages
English (en)
Other versions
IL257488A (he
Inventor
Yutaka Shinagawa
Yasuhiro Taniguchi
Hideo Kasai
Ryotaro Sakurai
Yasuhiko Kawashima
Kosuke Okuyama
Fukuo Owada
Shinji Yoshida
Original Assignee
Floadia Corp
Yutaka Shinagawa
Yasuhiro Taniguchi
Hideo Kasai
Ryotaro Sakurai
Yasuhiko Kawashima
Kosuke Okuyama
Fukuo Owada
Shinji Yoshida
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Floadia Corp, Yutaka Shinagawa, Yasuhiro Taniguchi, Hideo Kasai, Ryotaro Sakurai, Yasuhiko Kawashima, Kosuke Okuyama, Fukuo Owada, Shinji Yoshida filed Critical Floadia Corp
Publication of IL257488A publication Critical patent/IL257488A/he
Publication of IL257488B publication Critical patent/IL257488B/he

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
    • H10B41/30—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the memory core region
    • H10B41/35—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the memory core region with a cell select transistor, e.g. NAND
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/788—Field effect transistors with field effect produced by an insulated gate with floating gate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/792—Field effect transistors with field effect produced by an insulated gate with charge trapping gate insulator, e.g. MNOS-memory transistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B43/00—EEPROM devices comprising charge-trapping gate insulators
    • H10B43/30—EEPROM devices comprising charge-trapping gate insulators characterised by the memory core region
    • H10B43/35—EEPROM devices comprising charge-trapping gate insulators characterised by the memory core region with cell select transistors, e.g. NAND
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B69/00—Erasable-and-programmable ROM [EPROM] devices not provided for in groups H10B41/00 - H10B63/00, e.g. ultraviolet erasable-and-programmable ROM [UVEPROM] devices

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Semiconductor Memories (AREA)
  • Non-Volatile Memory (AREA)
  • Read Only Memory (AREA)
IL257488A 2015-10-01 2018-02-12 התקן זכרון מוליך למחצה לא נדיף IL257488B (he)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2015195638A JP5951096B1 (ja) 2015-10-01 2015-10-01 不揮発性半導体記憶装置
PCT/JP2016/078202 WO2017057242A1 (ja) 2015-10-01 2016-09-26 不揮発性半導体記憶装置

Publications (2)

Publication Number Publication Date
IL257488A IL257488A (he) 2018-04-30
IL257488B true IL257488B (he) 2020-01-30

Family

ID=56375206

Family Applications (1)

Application Number Title Priority Date Filing Date
IL257488A IL257488B (he) 2015-10-01 2018-02-12 התקן זכרון מוליך למחצה לא נדיף

Country Status (7)

Country Link
JP (1) JP5951096B1 (he)
KR (1) KR102437353B1 (he)
CN (1) CN108076670B (he)
IL (1) IL257488B (he)
SG (1) SG11201801237PA (he)
TW (1) TWI597827B (he)
WO (1) WO2017057242A1 (he)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7026537B2 (ja) * 2018-03-07 2022-02-28 ルネサスエレクトロニクス株式会社 半導体装置及び半導体装置の製造方法
JP7450283B2 (ja) * 2022-05-31 2024-03-15 株式会社フローディア 不揮発性メモリセル及び不揮発性半導体記憶装置

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4058232B2 (ja) * 2000-11-29 2008-03-05 株式会社ルネサステクノロジ 半導体装置及びｉｃカード
CN1291491C (zh) * 2002-11-12 2006-12-20 旺宏电子股份有限公司 半导体元件及其制作方法
JP2005142354A (ja) * 2003-11-06 2005-06-02 Matsushita Electric Ind Co Ltd 不揮発性半導体記憶装置及びその駆動方法及びその製造方法
DE112004003019T5 (de) * 2004-11-30 2008-01-03 Spansion LLC, Santa Clara Nicht-flüchtiges Speicherbauelement und Verfahren zu dessen Herstellung
JP4772429B2 (ja) * 2005-08-29 2011-09-14 ルネサスエレクトロニクス株式会社 半導体記憶装置
JP4171032B2 (ja) * 2006-06-16 2008-10-22 株式会社東芝 半導体装置及びその製造方法
KR20100080190A (ko) * 2008-12-31 2010-07-08 주식회사 동부하이텍 플래시메모리 소자 및 그 제조 방법
US20110204374A1 (en) * 2009-01-20 2011-08-25 Sharp Kabushiki Kaisha Thin film diode and method for fabricating the same
JP2011129816A (ja) * 2009-12-21 2011-06-30 Renesas Electronics Corp 半導体装置
JP5538024B2 (ja) * 2010-03-29 2014-07-02 ルネサスエレクトロニクス株式会社 不揮発性半導体記憶装置
KR101979299B1 (ko) * 2012-12-26 2019-09-03 에스케이하이닉스 주식회사 비휘발성 메모리 장치 및 그 제조방법
JP6168792B2 (ja) * 2013-02-28 2017-07-26 ルネサスエレクトロニクス株式会社 半導体装置およびその製造方法

Also Published As

Publication number Publication date
CN108076670A (zh) 2018-05-25
IL257488A (he) 2018-04-30
SG11201801237PA (en) 2018-03-28
WO2017057242A1 (ja) 2017-04-06
KR20180064329A (ko) 2018-06-14
TWI597827B (zh) 2017-09-01
KR102437353B1 (ko) 2022-08-30
JP2017069478A (ja) 2017-04-06
TW201717322A (zh) 2017-05-16
CN108076670B (zh) 2021-12-03
JP5951096B1 (ja) 2016-07-13

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FF Patent granted
KB Patent renewed