IL217244A0 - Polymers, photoresist compositions and methods of forming photolithographic patterns - Google Patents

Polymers, photoresist compositions and methods of forming photolithographic patterns

Info

Publication number
IL217244A0
IL217244A0 IL217244A IL21724411A IL217244A0 IL 217244 A0 IL217244 A0 IL 217244A0 IL 217244 A IL217244 A IL 217244A IL 21724411 A IL21724411 A IL 21724411A IL 217244 A0 IL217244 A0 IL 217244A0
Authority
IL
Israel
Prior art keywords
polymers
methods
photoresist compositions
photolithographic patterns
forming photolithographic
Prior art date
Application number
IL217244A
Other languages
English (en)
Original Assignee
Rohm & Haas Elect Mat
Dow Global Technologies Llc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Rohm & Haas Elect Mat, Dow Global Technologies Llc filed Critical Rohm & Haas Elect Mat
Publication of IL217244A0 publication Critical patent/IL217244A0/en

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
    • G03F7/0397—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition the macromolecular compound having an alicyclic moiety in a side chain
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F20/00—Homopolymers and copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and only one being terminated by only one carboxyl radical or a salt, anhydride, ester, amide, imide or nitrile thereof
    • C08F20/02—Monocarboxylic acids having less than ten carbon atoms, Derivatives thereof
    • C08F20/10—Esters
    • C08F20/26—Esters containing oxygen in addition to the carboxy oxygen
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F220/00—Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and only one being terminated by only one carboxyl radical or a salt, anhydride ester, amide, imide or nitrile thereof
    • C08F220/02—Monocarboxylic acids having less than ten carbon atoms; Derivatives thereof
    • C08F220/10—Esters
    • C08F220/26—Esters containing oxygen in addition to the carboxy oxygen
    • C08F220/28—Esters containing oxygen in addition to the carboxy oxygen containing no aromatic rings in the alcohol moiety
    • C08F220/282—Esters containing oxygen in addition to the carboxy oxygen containing no aromatic rings in the alcohol moiety and containing two or more oxygen atoms
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F220/00—Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and only one being terminated by only one carboxyl radical or a salt, anhydride ester, amide, imide or nitrile thereof
    • C08F220/02—Monocarboxylic acids having less than ten carbon atoms; Derivatives thereof
    • C08F220/10—Esters
    • C08F220/26—Esters containing oxygen in addition to the carboxy oxygen
    • C08F220/28—Esters containing oxygen in addition to the carboxy oxygen containing no aromatic rings in the alcohol moiety
    • C08F220/283—Esters containing oxygen in addition to the carboxy oxygen containing no aromatic rings in the alcohol moiety and containing one or more carboxylic moiety in the chain, e.g. acetoacetoxyethyl(meth)acrylate
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G63/00—Macromolecular compounds obtained by reactions forming a carboxylic ester link in the main chain of the macromolecule
    • C08G63/02—Polyesters derived from hydroxycarboxylic acids or from polycarboxylic acids and polyhydroxy compounds
    • C08G63/06—Polyesters derived from hydroxycarboxylic acids or from polycarboxylic acids and polyhydroxy compounds derived from hydroxycarboxylic acids
    • C08G63/08—Lactones or lactides
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/027—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/11—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers having cover layers or intermediate layers, e.g. subbing layers
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2041—Exposure; Apparatus therefor in the presence of a fluid, e.g. immersion; using fluid cooling means
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/30—Imagewise removal using liquid means
    • G03F7/32—Liquid compositions therefor, e.g. developers
    • G03F7/322—Aqueous alkaline compositions
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/30—Imagewise removal using liquid means
    • G03F7/32—Liquid compositions therefor, e.g. developers
    • G03F7/325—Non-aqueous compositions

Landscapes

  • Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Polymers & Plastics (AREA)
  • Organic Chemistry (AREA)
  • Health & Medical Sciences (AREA)
  • Medicinal Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Architecture (AREA)
  • Structural Engineering (AREA)
  • Materials For Photolithography (AREA)
  • Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
IL217244A 2010-12-31 2011-12-28 Polymers, photoresist compositions and methods of forming photolithographic patterns IL217244A0 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US201061429111P 2010-12-31 2010-12-31

Publications (1)

Publication Number Publication Date
IL217244A0 true IL217244A0 (en) 2012-07-31

Family

ID=45491287

Family Applications (1)

Application Number Title Priority Date Filing Date
IL217244A IL217244A0 (en) 2010-12-31 2011-12-28 Polymers, photoresist compositions and methods of forming photolithographic patterns

Country Status (7)

Country Link
US (1) US8614050B2 (enExample)
EP (1) EP2472326A1 (enExample)
JP (1) JP6080357B2 (enExample)
KR (1) KR101805617B1 (enExample)
CN (1) CN102617789B (enExample)
IL (1) IL217244A0 (enExample)
TW (1) TWI437011B (enExample)

Families Citing this family (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3734228B2 (ja) * 1995-07-14 2006-01-11 パイオニア株式会社 光記録媒体及びその製造方法
JP5947028B2 (ja) * 2010-12-02 2016-07-06 ローム アンド ハース エレクトロニック マテリアルズ エルエルシーＲｏｈｍ ａｎｄ Ｈａａｓ Ｅｌｅｃｔｒｏｎｉｃ Ｍａｔｅｒｉａｌｓ ＬＬＣ ポリマー、フォトレジスト組成物、およびフォトリソグラフィパターンを形成する方法
JP6118500B2 (ja) * 2011-02-28 2017-04-19 ローム アンド ハース エレクトロニック マテリアルズ エルエルシーＲｏｈｍ ａｎｄ Ｈａａｓ Ｅｌｅｃｔｒｏｎｉｃ Ｍａｔｅｒｉａｌｓ ＬＬＣ フォトレジスト組成物、およびフォトリソグラフィパターンを形成する方法
JP5277291B2 (ja) * 2011-06-29 2013-08-28 富士フイルム株式会社 感活性光線性又は感放射線性樹脂組成物、これを用いた感活性光線性又は感放射線性膜、及び、パターン形成方法
JP5298222B2 (ja) * 2011-07-28 2013-09-25 富士フイルム株式会社 感活性光線性又は感放射線性樹脂組成物、これを用いた感活性光線性又は感放射線性膜、及び、パターン形成方法
JP2013225094A (ja) * 2011-10-07 2013-10-31 Jsr Corp フォトレジスト組成物及びレジストパターン形成方法
JP5923423B2 (ja) * 2011-10-13 2016-05-24 住友化学株式会社 化合物、樹脂、レジスト組成物及びレジストパターンの製造方法
JP5682542B2 (ja) * 2011-11-17 2015-03-11 信越化学工業株式会社 ネガ型パターン形成方法
JP6224986B2 (ja) * 2012-11-09 2017-11-01 住友化学株式会社 レジスト組成物及びレジストパターンの製造方法
JP6065862B2 (ja) * 2013-04-10 2017-01-25 信越化学工業株式会社 パターン形成方法、レジスト組成物、高分子化合物及び単量体
CN104516138B (zh) * 2013-09-29 2017-09-22 中芯国际集成电路制造(上海)有限公司 硅基液晶面板的制作方法
JP6252154B2 (ja) * 2013-12-13 2017-12-27 住友化学株式会社 レジスト組成物及びレジストパターンの製造方法
JP6210052B2 (ja) * 2013-12-26 2017-10-11 信越化学工業株式会社 レジスト組成物及びパターン形成方法
US10941311B2 (en) * 2016-04-28 2021-03-09 Nof Corporation Polyoxyethylene compound having multiple hydroxyl groups at end, and contact lens
JP6999351B2 (ja) * 2017-10-05 2022-01-18 東京応化工業株式会社 レジスト組成物、レジストパターン形成方法、高分子化合物及び化合物
US11829068B2 (en) 2020-10-19 2023-11-28 Tokyo Ohka Kogyo Co., Ltd. Resist composition, method of forming resist pattern, compound, and resin
CN112625022A (zh) * 2020-12-23 2021-04-09 上海博栋化学科技有限公司 一种光刻胶树脂单体及其合成方法
CN112679461A (zh) * 2020-12-23 2021-04-20 上海博栋化学科技有限公司 一种增加溶解差的光刻胶树脂单体及其合成方法
CN113620921A (zh) * 2021-06-22 2021-11-09 徐州博康信息化学品有限公司 一种光刻胶酸敏树脂单体及其合成方法和应用
WO2024248931A1 (en) * 2023-06-01 2024-12-05 The Regents Of The University Of California Photothermal patterning of polymers

Family Cites Families (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5865411A (ja) * 1981-10-15 1983-04-19 Toyo Contact Lens Co Ltd コンタクトレンズの製造法
JPS57181524A (en) * 1981-05-01 1982-11-09 Toyo Contact Lens Co Ltd Contact lens and its manufacture
CA1182614A (en) * 1981-05-01 1985-02-19 Kyoichi Tanaka Contact lens and process for preparing the same
US5214452A (en) 1988-12-19 1993-05-25 Ciba-Geigy Corporation Hydrogels based on fluorine-containing and saccharide monomers
CA2028112A1 (en) * 1989-03-28 1990-09-29 Norbert Klaus Hydrogels based on sugar alcohol monomers
JP2715881B2 (ja) 1993-12-28 1998-02-18 日本電気株式会社 感光性樹脂組成物およびパターン形成方法
JPH0950126A (ja) * 1995-08-08 1997-02-18 Fujitsu Ltd レジスト組成物及びレジストパターン形成方法
CN1198181C (zh) 1996-03-07 2005-04-20 住友电木株式会社 包括具有酸不稳定侧基的多环聚合物的光刻胶组合物
TWI234567B (en) * 1998-11-27 2005-06-21 Hyundai Electronics Ind Cross-linker for photoresist, and photoresist composition comprising the same
TWI291953B (enExample) * 2001-10-23 2008-01-01 Mitsubishi Rayon Co
DE10308504A1 (de) 2003-02-26 2004-09-09 Basf Ag Enzymatische Herstellung von (Meth)acrylsäureestern
KR20060066932A (ko) 2004-12-14 2006-06-19 주식회사 하이닉스반도체 포토레지스트 중합체 및 이를 함유하는 포토레지스트 조성물
JP5011018B2 (ja) 2007-04-13 2012-08-29 富士フイルム株式会社 パターン形成方法
US8034547B2 (en) 2007-04-13 2011-10-11 Fujifilm Corporation Pattern forming method, resist composition to be used in the pattern forming method, negative developing solution to be used in the pattern forming method and rinsing solution for negative development to be used in the pattern forming method
KR20090059650A (ko) * 2007-12-07 2009-06-11 삼성전자주식회사 이머전 리소그래피용 포토레지스트 조성물 및 이를 이용한포토레지스트 패턴의 형성 방법
TWI522745B (zh) 2010-01-08 2016-02-21 富士軟片股份有限公司 圖案形成方法、感光化射線性或感放射線性樹脂組成物及光阻膜
JP5775701B2 (ja) 2010-02-26 2015-09-09 富士フイルム株式会社 パターン形成方法及びレジスト組成物
EP2472324A1 (en) * 2010-12-31 2012-07-04 Rohm and Haas Electronic Materials LLC Monomers, polymers, photoresist compositions and methods of forming photolithographic patterns

Also Published As

Publication number Publication date
JP2012149252A (ja) 2012-08-09
US20120171617A1 (en) 2012-07-05
CN102617789A (zh) 2012-08-01
KR20120078671A (ko) 2012-07-10
KR101805617B1 (ko) 2017-12-07
TWI437011B (zh) 2014-05-11
EP2472326A1 (en) 2012-07-04
TW201241018A (en) 2012-10-16
CN102617789B (zh) 2015-03-11
JP6080357B2 (ja) 2017-02-15
US8614050B2 (en) 2013-12-24

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