IL152577A0 - Electrically-eraseable programmable read-only memory having reduced-page-size program and erase - Google Patents

Electrically-eraseable programmable read-only memory having reduced-page-size program and erase

Info

Publication number
IL152577A0
IL152577A0 IL15257701A IL15257701A IL152577A0 IL 152577 A0 IL152577 A0 IL 152577A0 IL 15257701 A IL15257701 A IL 15257701A IL 15257701 A IL15257701 A IL 15257701A IL 152577 A0 IL152577 A0 IL 152577A0
Authority
IL
Israel
Prior art keywords
erase
page
electrically
memory
reduced
Prior art date
Application number
IL15257701A
Other languages
English (en)
Original Assignee
Advanced Tech Materials
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Advanced Tech Materials filed Critical Advanced Tech Materials
Publication of IL152577A0 publication Critical patent/IL152577A0/xx

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
    • G11C16/0408—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors
    • G11C16/0425—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors comprising cells containing a merged floating gate and select transistor
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
    • G11C16/0408—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/08—Address circuits; Decoders; Word-line control circuits

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Read Only Memory (AREA)
  • Semiconductor Memories (AREA)
  • Non-Volatile Memory (AREA)
IL15257701A 2000-05-03 2001-04-26 Electrically-eraseable programmable read-only memory having reduced-page-size program and erase IL152577A0 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US09/564,324 US6400603B1 (en) 2000-05-03 2000-05-03 Electronically-eraseable programmable read-only memory having reduced-page-size program and erase
PCT/US2001/013581 WO2001084556A1 (en) 2000-05-03 2001-04-26 Electrically-eraseable programmable read-only memory having reduced-page-size program and erase

Publications (1)

Publication Number Publication Date
IL152577A0 true IL152577A0 (en) 2003-05-29

Family

ID=24254017

Family Applications (1)

Application Number Title Priority Date Filing Date
IL15257701A IL152577A0 (en) 2000-05-03 2001-04-26 Electrically-eraseable programmable read-only memory having reduced-page-size program and erase

Country Status (10)

Country Link
US (2) US6400603B1 (ko)
EP (1) EP1305805A1 (ko)
JP (1) JP4966472B2 (ko)
KR (1) KR100698340B1 (ko)
AU (1) AU2001255732A1 (ko)
BR (1) BR0110585A (ko)
CA (1) CA2407888A1 (ko)
IL (1) IL152577A0 (ko)
NZ (1) NZ522383A (ko)
WO (1) WO2001084556A1 (ko)

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US7236402B2 (en) * 2005-11-30 2007-06-26 Freescale Semiconductor, Inc. Method and apparatus for programming/erasing a non-volatile memory
US7345914B2 (en) * 2005-12-22 2008-03-18 Intel Corporation Use of flash memory blocks outside of the main flash memory array
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US8068365B2 (en) 2008-02-04 2011-11-29 Mosaid Technologies Incorporated Non-volatile memory device having configurable page size
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US8305805B2 (en) * 2008-11-03 2012-11-06 Invensas Corporation Common drain non-volatile multiple-time programmable memory
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Also Published As

Publication number Publication date
NZ522383A (en) 2004-03-26
US6510081B2 (en) 2003-01-21
US20020114185A1 (en) 2002-08-22
KR20030014212A (ko) 2003-02-15
JP2003532968A (ja) 2003-11-05
BR0110585A (pt) 2004-04-06
CA2407888A1 (en) 2001-11-08
AU2001255732A1 (en) 2001-11-12
WO2001084556A1 (en) 2001-11-08
KR100698340B1 (ko) 2007-03-23
US6400603B1 (en) 2002-06-04
EP1305805A1 (en) 2003-05-02
JP4966472B2 (ja) 2012-07-04

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