BR0110585A - Memória de apenas leitura programável e eletricamente apagável tendo programa e apagamento de tamanho de página reduzido - Google Patents

Memória de apenas leitura programável e eletricamente apagável tendo programa e apagamento de tamanho de página reduzido

Info

Publication number
BR0110585A
BR0110585A BR0110585-0A BR0110585A BR0110585A BR 0110585 A BR0110585 A BR 0110585A BR 0110585 A BR0110585 A BR 0110585A BR 0110585 A BR0110585 A BR 0110585A
Authority
BR
Brazil
Prior art keywords
eeprom
size
programmable
testing
flash
Prior art date
Application number
BR0110585-0A
Other languages
English (en)
Inventor
Trevor Blyth
David Sowards
Phillip C Barnett
Original Assignee
Advanced Tech Materials
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Advanced Tech Materials filed Critical Advanced Tech Materials
Publication of BR0110585A publication Critical patent/BR0110585A/pt

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
    • G11C16/0408—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors
    • G11C16/0425—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors comprising cells containing a merged floating gate and select transistor
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
    • G11C16/0408—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/08—Address circuits; Decoders; Word-line control circuits

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Read Only Memory (AREA)
  • Semiconductor Memories (AREA)
  • Non-Volatile Memory (AREA)

Abstract

"MEMóRIA DE APENAS LEITURA PROGRAMáVEL E ELETRICAMENTE APAGáVEL TENDO PROGRAMA E APAGAMENTO DE TAMANHO DE PáGINA REDUZIDO". Ao reduzir o tamanho dos blocos ou páginas (34) que estão contidos em uma malha EEPROM Flash (30) que precisa ser apagada em uma operação de gravação ou de apagamento, o tamanho do registro necessário é reduzido, tornando mais fácil para o processador lidar com blocos menores de informação (8 bytes), reduzir o tamanho e a complexidade do microprocessador, e aumentar a durabilidade do EEPROM Flash permitindo que ele seja utilizado no lugar do EEPROM de alta tecnologia. A substituição do ROM de máscara pelo EEPROM Flash permite o teste integral da área de armazenamento de código bem como permite aos clientes utilizar esse espaço para teste em seus procedimentos de fabricação. O código utilizado para teste pode então ser limpo e reprogramado com o armazenamento do código final antes do embarque final.
BR0110585-0A 2000-05-03 2001-04-26 Memória de apenas leitura programável e eletricamente apagável tendo programa e apagamento de tamanho de página reduzido BR0110585A (pt)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US09/564,324 US6400603B1 (en) 2000-05-03 2000-05-03 Electronically-eraseable programmable read-only memory having reduced-page-size program and erase
PCT/US2001/013581 WO2001084556A1 (en) 2000-05-03 2001-04-26 Electrically-eraseable programmable read-only memory having reduced-page-size program and erase

Publications (1)

Publication Number Publication Date
BR0110585A true BR0110585A (pt) 2004-04-06

Family

ID=24254017

Family Applications (1)

Application Number Title Priority Date Filing Date
BR0110585-0A BR0110585A (pt) 2000-05-03 2001-04-26 Memória de apenas leitura programável e eletricamente apagável tendo programa e apagamento de tamanho de página reduzido

Country Status (10)

Country Link
US (2) US6400603B1 (pt)
EP (1) EP1305805A1 (pt)
JP (1) JP4966472B2 (pt)
KR (1) KR100698340B1 (pt)
AU (1) AU2001255732A1 (pt)
BR (1) BR0110585A (pt)
CA (1) CA2407888A1 (pt)
IL (1) IL152577A0 (pt)
NZ (1) NZ522383A (pt)
WO (1) WO2001084556A1 (pt)

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Also Published As

Publication number Publication date
CA2407888A1 (en) 2001-11-08
AU2001255732A1 (en) 2001-11-12
US6510081B2 (en) 2003-01-21
JP2003532968A (ja) 2003-11-05
KR20030014212A (ko) 2003-02-15
EP1305805A1 (en) 2003-05-02
US20020114185A1 (en) 2002-08-22
KR100698340B1 (ko) 2007-03-23
US6400603B1 (en) 2002-06-04
NZ522383A (en) 2004-03-26
WO2001084556A1 (en) 2001-11-08
JP4966472B2 (ja) 2012-07-04
IL152577A0 (en) 2003-05-29

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Legal Events

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B08F Application dismissed because of non-payment of annual fees [chapter 8.6 patent gazette]

Free format text: REFERENTE A 5A, 6A E 7A ANUIDADES.

B08K Patent lapsed as no evidence of payment of the annual fee has been furnished to inpi [chapter 8.11 patent gazette]

Free format text: REFERENTE AO DESPACHO PUBLICADO NA RPI 1963 DE 19.08.2008.